QM2530M7 UPI | Alldatasheet

Document overview

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Technical content

Features

第 1 頁 2016 N-Channel 20V Fast Parameter Ra Drain-Source Voltage Gate-Source Voltage tinuous Drain Current, VGS @ 4.5V1 tinuous Drain Current, VGS @ 4.5V1 Pulsed Drain Current Total Power Dissipation3 Storage Temperature Range -55 rating Junction Temperature Range -55 Parameter rmal Resistance Junction-Ambient1 BVDSS RDS (VGS= 20V 12.5 erformance trench extreme RDSON ion one cell battery oHS and Green function reliability

Applications

Li- ion Battery Charging a Portable Applications su Media Players, Digital Ca PRPAK 3X3 W/O EP Pin Product Summary D1/D2 S2 G2 S1 G1 2016-03-18 - 1 - QM2530M7 Fast Switching MOSFET Rating Units 20 V ±12 V 9.4 A 7.5 A 60* A 1.67 W 55 to 150 ℃ 55 to 150 ℃ Max. Unit 75 ℃/W RDSON (VGS=4.5V) ID (TA=25℃) 12.5mΩ 9.4A ging and Discharging for ns such as Cell Phones, ital Cameras, etc. Pin Configuration Rev A.06 D031516

機密 第 2 頁 2016-03-18 - 2 - QM2530M7 N-Channel 20V Fast Switching MOSFET Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.028 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V , ID=5A 7.5 10.0 12.5 mΩ VGS=4.0V , ID=5A 7.7 10.5 13.2 mΩ VGS=3.8V , ID=5A 8.0 10.9 13.8 mΩ VGS=3.1V , ID=5A 8.3 11.5 14.5 mΩ VGS=2.5V , ID=4A 8.8 12.5 15.6 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 0.8 1.2 V △VGS(th) VGS(th) Temperature Coefficient --- -2.58 --- mV/ ℃ IDSS Drain-Source Leakage Current V DS=16V , VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±10 uA Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 1.91 --- Ω Qg Total Gate Charge (4.5V) VDS=16V , VGS=4.5V , ID=5A --- 17.3 --- nC Qgs Gate-Source Charge --- 2.2 --- Qgd Gate-Drain Charge --- 4.1 --- Td(on) Turn-On Delay Time VDD=10V , VGS=4.5V , RG=3.3Ω, ID=5A --- 5.3 --- ns Tr Rise Time --- 34.0 --- Td(off) Turn-Off Delay Time --- 27.0 --- Tf Fall Time --- 9.5 --- Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 1317 --- pF Coss Output Capacitance --- 140 --- Crss Reverse Transfer Capacitance --- 130 --- Symbol Parameter Conditions Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current 9.4 A ISM Pulsed Source Current 2,4 38 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ 1.2 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

機密 第 3 頁 2016-03-18 - 3 - QM2530M7 N-Channel 20V Fast Switching MOSFET 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

機密 第 4 頁 2016-03-18 - 4 - QM2530M7 N-Channel 20V Fast Switching MOSFET Fig.10 Safe Operating Area Fig.11 Normalized Maximum Transient Thermal Impedance Fig.9 Capacitance Fig.8 Transfer Characteristics Fig.7 Drain-Source On-State Resistance

機密 第 5 頁 2016-03-18 - 5 - QM2530M7 N-Channel 20V Fast Switching MOSFET Fig.12 Switching Time Waveform Fig.13 Gate Charge Waveform Fig.14 Top Marking

機密 第 6 頁 2016-03-18 - 6 - QM2530M7 N-Channel 20V Fast Switching MOSFET Fig.15 PRPAK 3X3 W/O EP Package Outline Drawing