QM2417Y1

QM2417Y1 UPI | Alldatasheet

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High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data SOT323 (SC-70-3L ) Pin Configuration Product Summary Rev A.03 D062316 G S D

P-Ch 20V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=-250uA -20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=-1mA --- -0.012 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.5 -0.8 -1.2 V △VGS(th) VGS(th) Temperature Coefficient --- 2.2 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=-5V , ID=-1A --- 3.1 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 39 78 Ω Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-1A --- 2.9 4.1 nC Qgs Gate-Source Charge --- 0.51 0.7 Qgd Gate-Drain Charge --- 0.81 1.1 Td(on) Turn-On Delay Time VDD=-10V , VGS=-4.5V , RG=3.3Ω ID=-1A --- 2 4.0 ns Tr Rise Time --- 8 14.4 Td(off) Turn-Off Delay Time --- 23 46 Tf Fall Time --- 14.8 29.6 Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 190 266 pF Coss Output Capacitance --- 33 46.2 Crss Reverse Transfer Capacitance --- 27 37.8 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source-Drain Diode Current 1,4 VG=VD=0V , Force Current --- --- -1 A ISM Pulsed Diode Forward Current 2,4 --- --- -5 A VSD Body Diode Voltage 2 V GS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-2A , dI/dt=100A/µs , TJ=25℃ --- 6.2 --- nS Qrr Reverse Recovery Charge --- 2 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Body Diode Characteristics

P-Ch 20V Fast Switching MOSFETs 0 1 2 3 4 -VDS , Drain-to-Source Voltage (V) -ID Drain Current (A) VGS=-1.8V VGS=-2.5V VGS=-5V VGS=-4.5V VGS=-3V 160 230 300 370 440 510 580 1 2 3 4 5 -VGS (V) RDSON (mΩ) ID=-1A 0 0.3 0.6 0.9 1.2 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) (V) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

P-Ch 20V Fast Switching MOSFETs 100 1000 1 5 9 13 17 21 -VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 0.1 1 10 100 -VDS (V) -ID (A) 100us 1ms 10ms 100ms DC TA=25℃ Single Pulse 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TA+PDMXRθJA TON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform