QM2414K UPI | Alldatasheet
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High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data SOT23 Pin Configuration Product Summary G S D Rev A.03 D062016
N-Ch 20V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.015 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V , ID=3A --- 42 50 mΩ VGS=2.5V , ID=2A --- 55 65 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 0.8 1.2 V △VGS(th) VGS(th) Temperature Coefficient --- -2.86 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=16V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=3A --- 10.5 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 1.9 3.8 Ω Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=3A --- 4.7 6.6 nC Qgs Gate-Source Charge --- 0.68 0.96 Qgd Gate-Drain Charge --- 1.3 1.8 Td(on) Turn-On Delay Time VDD=10V , VGS=4.5V , RG=3.3Ω ID=3A --- 1.4 2.8 ns Tr Rise Time --- 40 72 Td(off) Turn-Off Delay Time --- 12.4 25 Tf Fall Time --- 5.6 11 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 296 415 pF Coss Output Capacitance --- 44 62 Crss Reverse Transfer Capacitance --- 35 49 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- 3.6 A ISM Pulsed Source Current 2,4 --- --- 14.4 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=3A , dI/dt=100A/µs , TJ=25℃ --- 8.9 --- nS Qrr Reverse Recovery Charge --- 1.7 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics
N-Ch 20V Fast Switching MOSFETs 0 0.3 0.6 0.9 1.2 VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
N-Ch 20V Fast Switching MOSFETs 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA) PDM D = TON/T TJpeak = TA + PDM x RθJA TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE 100 1000 1 5 9 13 17 21 VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform