QM2413K

QM2413K UPI | Alldatasheet

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High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data SOT23 Pin Configuration Product Summary G S D Rev A.03 D062016

P-Ch 20V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=-250uA -20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=-1mA --- -0.012 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.5 -0.8 -1.2 V △VGS(th) VGS(th) Temperature Coefficient --- 3.97 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=-16V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=-16V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=-5V , ID=-2A --- 5.6 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 25 50 Ω Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-2A --- 4.7 6.6 nC Qgs Gate-Source Charge --- 0.8 1.1 Qgd Gate-Drain Charge --- 1.3 1.8 Td(on) Turn-On Delay Time VDD=-10V , VGS=-4.5V , RG=3.3Ω ID=-2A --- 3.2 6.4 ns Tr Rise Time --- 34 61 Td(off) Turn-Off Delay Time --- 18 36 Tf Fall Time --- 9.2 18.4 Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 320 448 pF Coss Output Capacitance --- 51 71 Crss Reverse Transfer Capacitance --- 41 57 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- -2.2 A ISM Pulsed Source Current 2,4 --- --- -8.8 A VSD Diode Forward Voltage 2 V GS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V trr Reverse Recovery Time IF=-2A , dI/dt=100A/µs , TJ=25℃ --- 10.2 --- nS Qrr Reverse Recovery Charge --- 2.5 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics

P-Ch 20V Fast Switching MOSFETs 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) (V) 0 0.5 1 1.5 2 2.5 -VDS , Drain-to-Source Voltage (V) -ID Drain Current (A) VGS=-1.8V VGS=-2.5V VGS=-5V VGS=-4.5V VGS=-3V 120 160 200 240 280 2 4 6 8 10 -VGS (V) RDSON (mΩ) ID=-2A 0 0.3 0.6 0.9 1.2 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

P-Ch 20V Fast Switching MOSFETs 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA) PDM D = TON/T TJpeak = TA + PDM x RθJA TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE 100 1000 1 5 9 13 17 21 -VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 0.1 1 10 100 -VDS (V) -ID (A) 10us 100us 10ms 100ms DC TA=25℃ Single Pulse Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform