QM2407K UPI | Alldatasheet

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High Frequency Point-of-Load Synchronous Small power switching for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch Absolute Maximum Ratings Thermal Data SOT23 Pin Configuration Product Summary Rev A.04 D061716 G S D

P-Ch 20V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=-250uA -20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=-1mA --- -0.01 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-4.5V , ID=-4A --- 25 32 mΩ VGS=-2.5V , ID=-2A --- 32 40 VGS=-1.8V , ID=-1.5A 42 52 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.3 -0.5 -1.0 V △VGS(th) VGS(th) Temperature Coefficient --- 2.96 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=-5V , ID=-4A --- 21 --- S Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-4A --- 27.3 38.2 nC Qgs Gate-Source Charge --- 3.6 5.0 Qgd Gate-Drain Charge --- 6.5 9.1 Td(on) Turn-On Delay Time VDD=-10V , VGS=-4.5V , RG=3.3Ω ID=-4A --- 9.2 18.4 ns Tr Rise Time --- 59 106 Td(off) Turn-Off Delay Time --- 99 198 Tf Fall Time --- 71 142 Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 2280 3192 pF Coss Output Capacitance --- 220 308 Crss Reverse Transfer Capacitance --- 187 262 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- -4.7 A ISM Pulsed Source Current 2,4 --- --- -18.8 A VSD Diode Forward Voltage 2 V GS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time IF=-4A , dI/dt=100A/µs , TJ=25℃ --- 52 --- nS Qrr Reverse Recovery Charge --- 28 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics

P-Ch 20V Fast Switching MOSFETs 0 0.25 0.5 0.75 1 1.25 -VDS , Drain-to-Source Voltage (V) -ID Drain Current (A) VGS=-4.5V VGS=-3V VGS=-2.5V VGS=-1.8V VGS=-5V 1 2 3 4 5 -VGS (V) RDSON (mΩ) ID=-4A 0 0.4 0.8 1.2 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

P-Ch 20V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 -VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA) PDM D = TON/T TJpeak = TA + PDM x RθJA TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform