QM2401C1 UPI | Alldatasheet

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z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch Absolute Maximum Ratings Thermal Data SOT 363 Pin Configuration Product Summary Rev A.03 D051211

P-Ch 20V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=-250uA -20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.014 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=-4.5V , ID=-2A --- 50 65 mΩ VGS=-2.5V , ID=-1A --- 75 95 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.5 -0.8 -1.2 V △VGS(th) VGS(th) Temperature Coefficient --- 3.95 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-16V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-16V , VGS=0V , TJ=55℃ --- --- -5 IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=-5V , ID=-2A --- 11.2 --- S Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-2A --- 10 14.0 nC Qgs Gate-Source Charge --- 1.75 2.5 Qgd Gate-Drain Charge --- 3 4.2 Td(on) Turn-On Delay Time VDD=-10V , VGS=-4.5V , RG=3.3Ω, ID=-2A --- 5.8 11.6 ns Tr Rise Time --- 36.6 66 Td(off) Turn-Off Delay Time --- 35.2 70 Tf Fall Time --- 19.6 39.2 Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 857 1200 pF Coss Output Capacitance --- 114 160 Crss Reverse Transfer Capacitance --- 108 151 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- -1.9 A ISM Pulsed Source Current 2,4 --- --- -7.6 A VSD Diode Forward Voltage 2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time IF=-2A , dI/dt=100A/µs , TJ=25℃ --- 24.7 --- nS Qrr Reverse Recovery Charge --- 6.8 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics

P-Ch 20V Fast Switching MOSFETs 00 .5 11 .5 -VDS , Drain-to-Source Voltage (V) -ID Drain Current (A) VGS=- 5V VGS=- 4.5V VGS=- 3V VGS=- 2.5V VGS= -1.8V 0 0.2 0.4 0.6 0.8 1 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

P-Ch 20V Fast Switching MOSFETs 100 1000 159 1 3 1 7 2 1 -VDS (V) C (pF) F=1.0MHz Ciss Coss Crss 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (RθJA) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TA+PDMXRθJA TON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform