QM200DY-24

QM200DY-24 MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION Inverters, Servo dvives, DC motor controllers, NC equipment, Welders QM200DY-24

• Insulated Type
• UL Recognized Yellow Card No. E80276 (N) File No. E80271 113 25 25 21.5 6156 5.5 4–φ6.5 93 17 8 17 8 17 6156 B2E2E1B1 3–M6 7 6.5 E2 C1C2E1 B2X C2E1 B1X LABEL Tab#110, t=0.5 B2XB1X

Feb.1999 Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Min. Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions I C=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M6 Mounting screw M6 Typical value Ratings 1200 1200 1200 200 200 1560 2000 –40~+150 –40~+125 2500 1.96~2.94 20~30 1.96~2.94 20~30 870 Unit V V V V A A W A A V N·m kg·cm N·m kg·cm g Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions V CE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=200A, IB=4A –IC=200A (diode forward voltage) IC=200A, VCE=5V VCC=600V, IC=200A, IB1=–IB2=4A Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) Typ. Max. 4.0 4.0 300 3.0 3.5 1.8 3.0 3.0 0.08 0.35 0.04 MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE

Feb.1999 753275327532 Tj=25°C Tj=125°C 110 210 310 410 010 110 210 310 444 VCE=5.0V 400 320 240 160 0 012345 Tj=25°C IB=2A IB=1A IB=0.5A IB=4A IB=0.2A 110 010 –110 Tj=25°C VCE=2.8V 110 010 110 23 4 5 7 210 23 4 5 7 310 IB=4A –110 VBE(sat) VCE(sat) Tj=25°C Tj=125°C 110 010 7 5432754320 –110 Tj=25°C Tj=125°C IC=200A IC=150A 110 23 4 5 7 210 23 4 5 7 310 010 ts tf ton Tj=25°C Tj=125°C VCC=600A 110 IB1=–IB2=4A PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A)COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SATURATION VOLTAGE V CE (sat), VBE (sat) (V)SWITCHING TIME t on, ts, tf (µs) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (A) COLLECTOR CURRENT I C (A) MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE

Feb.1999 100 0 0 20 60 100 120 16040 80 140 110 010 23 4 5 7 110 010 ts tf 34 57 210 Tj=25°C Tj=125°C VCC=600V IB1=4A IC=200A 753275327532 TC=25°C 210 310 110 010 310 210 110 010 444 1ms 50µs 200µs DC 100µs 400 0 0 400 800 1200 1600 300 200 100 IB2=–4A Tj=125°C IB2=–8A 200 600 1000 1400 310 210 Tj=25°C Tj=125°C 110 753275327532 0.10 0.08 0.06 0.04 0.02 7532 110 010 010 –310 –210 –110 444 NON–REPETITIVE COLLECTOR DISSIPATION SECOND BREAKDOWN AREA SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA SWITCHING TIME t s, tf (µs) COLLECTOR-EMITTER VOLTAGE V CE (V)BASE REVERSE CURRENT –I B2 (A) COLLECTOR-EMITTER VOLTAGE V CE (V) CASE TEMPERATURE T C (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) TIME (s) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I C (A) MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W)

Feb.1999 75432754320 400 800 1200 1600 2000 010 110 210 753275327532 0.40 0.32 0.24 0.16 0.08 7532 110 010 010 –310 –210 –110 444 42 7534 753275327532 444 310 210 110 010 010 110 210 310 –110 010 110 210 Tj=25°C Tj=125°C VCC=600V IB1=–IB2=4A Qrr Irr trr Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I F (A) TIME (s) MITSUBISHI TRANSISTOR MODULES QM200DY-24 HIGH POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W) trr (µs)