QM20

QM20KD-HB MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders. QM20KD-HB

• Insulated Type
• UL Recognized Yellow Card No. E80276 (N) File No. E80271 KP BuP BvP BwP BwNBvNBuNA TS R U VW N 18 15 818 110 R6 11 11 12.5 10.5 10.518.5 (24.45) (23.6) BwP W BwN BvP BvN VU BuP BuN PK R S A T N 6.5 2–φ5.5 LABEL Tab#110, t=0.5 Tab#250, t=0.8

Feb.1999 Min. 250 Symbol I CEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=20A, IB=80mA –IC=20A (diode forward voltage) IC=20A, VCE=2V VCC=300V, IC=20A, IB1=120mA,–IB2=0.4A Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Conditions Charged part to case, AC for 1 minute Mounting screw M5 Typical value MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Inverter part, Tj=25°C) Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Conditions I C=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 200 Unit V V V V A A W A A ABSOLUTE MAXIMUM RATINGS (Converter part, Tj=25°C) Symbol VRRM VRSM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Conditions Three phase full wave rectifying circuit, Tc=79°C One half cycle at 60 Hz, peak value Value for one cycle of surge current Ratings 800 900 220 300 375 Unit V V V A A A ABSOLUTE MAXIMUM RATINGS (Common) Symbol Tj Tstg Viso Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Ratings –40~150 –40~125 2500 1.47~1.96 15~20 125 Unit V N·m kg·cm g Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Typ. Max. 1.0 1.0 2.0 2.5 1.5 1.5 2.0 1.5 2.5 0.35 ELECTRICAL CHARACTERISTICS (Inverter part, Tj=25°C) Parameter Repetitive peak reverse current Forward voltage Thermal resistance Contact thermal resistance Test conditions V R=VRRM, Tj=150°C IF=30A Junction to case Case to fin, conductive grease applied ELECTRICAL CHARACTERISTICS (Converter part, Tj=25°C) Symbol IRRM VFM Rth (j-c) Rth (c-f) Unit mA V °C/W °C/W Limits Max. 5.0 1.3 0.9 0.35 Min. Typ.

Feb.1999 PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A)COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SATURATION VOLTAGE V CE (sat), VBE (sat) (V)SWITCHING TIME t on, ts, tf (µs) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (A) COLLECTOR CURRENT I C (A) MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE –110 010 –210 VCE=2.0V Tj=25°C 110 010 –110 010 23 4 5 7 110 2 34 57 210 VBE(sat) VCE(sat) Tj=25°C Tj=125°C IB=80mA 0 01 2345 Tj=25°C IB=20mA IB=40mA IB=80mA IB=200mA IB=400mA 310 210 010 23 4 5 7 110 23 4 5 7 210 VCE=2.0V VCE=5.0V Tj=25°C Tj=125°C 010 –110 754320 543–210 2 Tj=25°C Tj=125°C IC=15A IC=20A IC=25A 110 010 010 23 4 5 7 110 23 4 5 7 210

2 IB1=120mA

VCC=300V ts ton tf IB2=–400mA Tj=25°C Tj=125°C

Feb.1999 SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA SWITCHING TIME t s, tf (µs) COLLECTOR-EMITTER VOLTAGE V CE (V)BASE REVERSE CURRENT –I B2 (A) COLLECTOR-EMITTER VOLTAGE V CE (V) CASE TEMPERATURE T C (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) TIME (s) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I C (A) MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W) 010 110 –110 –210 010 –310 210 110 010 010 110 210 310 –110 100 0 0 20 60 100 120 16040 80 140 110 010 34 57 010 23 –110 2 45 7 110 ts Tj=25°C Tj=125°C IB1=120mA VCC=300V IC=20A tf 0 0 800 600200 400 700500100 300 Tj=125°C IB2=–0.5A IB2=–3A 753275327532 200µs5ms DC 100µs 50µs 10ms 1ms TC=25°C 210 110 010 Tj=25°C Tj=125°C 753275327532 2.0 7532 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 TC=25°C NON-PEPETITIVE COLLECTOR DISSIPATION SECOND BREAKDOWN AREA

Feb.1999 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) trr (µs) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I F (A) TIME (s) Zth (j–c) (°C/ W) MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE 010 110 –110 –210 –310 010 210 110 7 5432010 754320 120 160 200 100 140 180 753275327532 2.0 7532 0.8 0.4 1.2 1.6 2.4 2.8 3.2 110 010 –110 010 23 4 5 7 110 23 4 5 7 210 210 110 010 Irr Qrr trr VCC=300V IB1=120mA IB2=–400mA Tj=25°C Tj=125°C

Feb.1999 POWER DISSIPATION P (W) MAXIMUM POWER DISSIPATION ALLOWABLE CASE TEMPERATURE VS. DC OUTPUT CURRENT DC OUTPUT CURRENT I O (A) DC OUTPUT CURRENT I O (A) MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE MAXIMUM FORWARD CHARACTERISTIC FORWARD CURRENT I F (A) FORWARD VOLTAGE V F (V) PERFORMANCE CURVES (Converter parts) SURGE (NON-REPETITIVE) FOWARD CURRENT I FSM (A) ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT CONDUCTION TIME (CYCLES AT 60HZ) CASE TEMPERATURE T C (°C) 310 210 110 010 210 110 7 5432010 754320 100 200 300 400 500 Tj=25°C 100 0 0 8 16 24 32 40 160 140 120 100 60 0 8 16 24 32 40 RESISTIVE, INDUCTIVE LOADRESISTIVE, INDUCTIVE LOAD