QM18N20D UPI | Alldatasheet

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High efficient switched mode power supplies Electronic lamp ballast LCD TV/ Monitor Adapter Absolute Maximum Ratings Thermal Data TO252 Pin Configuration Product Summary Rev A.02 D111016 G S D

機密 第 2 頁 2016-11-10 - 2 - QM18N20D N-Ch 200V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 200 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.17 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 V GS=10V , ID=12A --- 150 190 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 --- 5 V △VGS(th) VGS(th) Temperature Coefficient --- -5.2 --- mV/ ℃ IDSS Drain-Source Leakage Current V DS=160V , VGS=0V , TJ=25℃ --- --- 2 uA IGSS Gate-Source Leakage Current VGS=±30V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=12A --- 18.8 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 3.2 6.4 Ω Qg Total Gate Charge (10V) VDS=160V , VGS=10V , ID=12A --- 19.7 27.6 nC Qgs Gate-Source Charge --- 6.9 9.7 Qgd Gate-Drain Charge --- 4.7 6.6 Td(on) Turn-On Delay Time VDD=100V , VGS=10V , RG=3.3Ω, ID=12A --- 10.8 21.6 ns Tr Rise Time --- 23 41.4 Td(off) Turn-Off Delay Time --- 21 42 Tf Fall Time --- 16 32 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 1190 1666 pF Coss Output Capacitance --- 115 161 Crss Reverse Transfer Capacitance --- 4 5.6 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=50V , L=1mH , IAS=12A 93 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 18 A ISM Pulsed Source Current 2,6 --- --- 36 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , TJ=25℃ --- 110 --- nS Qrr Reverse Recovery Charge --- 525 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=1mH,IAS=17A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics

機密 第 3 頁 2016-11-10 - 3 - QM18N20D N-Ch 200V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

機密 第 4 頁 2016-11-10 - 4 - QM18N20D N-Ch 200V Fast Switching MOSFETs 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform