QM150HY-2H

QM150HY-2H MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders QM150HY-2H

• Insulated Type
• UL Recognized Yellow Card No. E80276 (N) File No. E80271 108 93(7.5) (7.5) 23 23φ6.5 C1E1C1 1310.5 10.5 Tab#110, t=0.5 6.5 C E C 46.5 8 815 LABEL

Feb.1999 ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Min. Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions I C=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M5 Mounting screw M6 Typical value Ratings 1000 1000 1000 150 150 1000 1500 –40~+150 –40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 250 Unit V V V V A A W A A V N·m kg·cm N·m kg·cm g Symbol I CEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions V CE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=150A, IB=3A –IC=150A (diode forward voltage) IC=150A, VCE=2.8V/5V VCC=600V, IC=150A, IB1=–IB2=3A Transistor part Diode part Conductive grease applied Typ. Max. 2.0 2.0 200 2.5 3.5 1.8 3.0 3.0 0.125 0.6 0.065 MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE

Feb.1999 110 010 –110 –210 310 210 110 010 –110 010 110 210 310 210 110 010 110 210 310 410 200 160 120 0 01 2345 Tj=25°C IB=1.5A IB=0.2A IB=0.8A IB=0.1A IB=0.4A 753275327532 444 VCE=5.0V VCE=2.8V Tj=25°C Tj=125°C 110 010 –110 34 57 110 234 57 7 210 VBE(sat) Tj=25°C Tj=125°C IB=3A VCE(sat) 110 010 –110 VCE=2.8V Tj=25°C 753275327532 444 VCC=600V Tj=25°C Tj=125°C tf ton ts IB1=–IB2=3A 753275327532 444 IC=100A Tj=25°C Tj=125°C IC=200A IC=50A IC=150A PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A)COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SATURATION VOLTAGE V CE (sat), VBE (sat) (V)SWITCHING TIME t on, ts, tf (µs) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (A) COLLECTOR CURRENT I C (A) MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE

Feb.1999 010 110 210 310 010 110 010 –110 –210 –310 310 210 110 010 010 110 210 310 210 –110 23 4 5 7 010 23 4 5 7 110 Tj=25°C Tj=125°C tf ts 110 VCC=600V IB1=3A IC=150A 010 753275327532 444 tw=50µS 100µS 200µ SDC S 320 0 0 200 1000 240 160 400 600 800 280 200 120 Tj=125°C IB2=–2A IB2=–5A 100 0 0 16020 40 60 80 100 120 140 1.6 0.4 0.8 1.2 2.00 Tj=25°C Tj=125°C 753275327532 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 3275325 444 TC=25°C NON–REPETITIVE COLLECTOR DISSIPATION SECOND BREAKDOWN AREA SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA SWITCHING TIME t s, tf (µs) COLLECTOR-EMITTER VOLTAGE V CE (V)BASE REVERSE CURRENT –I B2 (A) COLLECTOR-EMITTER VOLTAGE V CE (V) CASE TEMPERATURE T C (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) TIME (s) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I C (A) MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W)

Feb.1999 010 –110 –210 –310 110 010 110 210 010 –110 310 210 110 010 010 110 210 310 210 110 7 5432010 754320 200 600 1000 1400 1600 1200 800 400 753275327532 444 Irr trr Qrr VCC=600V IB1=–IB2=3A Tj=25°C Tj=125°C 753275327532 1.0 0.8 0.6 0.4 0.2 444 234 57 234 5 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I F (A) TIME (s) MITSUBISHI TRANSISTOR MODULES QM150HY-2H HIGH POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W) trr (µs)