QM15

QM15HA-H MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders QM15HA-H

• Insulated Type
• UL Recognized Yellow Card No. E80276 (N) File No. E80271 φ4.2 C E B 0.8 0.8 0.5 6.35 4.75 4.2 0.4 24.0 7.03.7 16.6 19.5 30.2 39.0 A B 7.0 7.0φ1.7 φ2.4 φ1.7 φ1.3 φ2.0 24.0 3.2 6.35 4.75 B C E LABEL Fig. A Fig. B φ2.4

Feb.1999 Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Mounting screw M4 Typical value ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Ratings 600 600 600 100 0.9 150 –40~+150 –40~+125 2500 0.98~1.47 10~15 Unit V V V V A A W A A V N·m kg·cm g MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Min. Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions V CE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=15A, IB=0.3A –IC=15A (diode forward voltage) IC=15A, VCE=2V/5V VCC=300V, IC=15A, IB1=–IB2=0.3A Transistor part Diode part Conductive grease applied Typ. Max. 1.0 1.0 2.0 2.5 1.5 1.5 8.0 2.0 1.2 2.5 0.4

Feb.1999 0 012345 Tj=25°C IB=0.4A IB=0.2A IB=0.1A IB=0.06A IB=0.02A 310 210 110 010 23 4 5 7 110 23 4 5 7 210 VCE=2.0V VCE=5.0V Tj=25°C Tj=125°C 110 010 –110 VCE=2.0V Tj=25°C 110 010 –110 010 23 4 5 7 110 23 4 5 7 210 Tj=25°C Tj=125°C IB=0.3A VBE(sat) VCE(sat) –110 7 5432–210 754320 Tj=25°C Tj=125°C IC=15A IC=10A IC=5A 110 010 010 23 4 5 7 110 23 4 5 7 210 Tj=25°C Tj=125°C IB1=–IB2=0.3A VCC=300V ts tf ton PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A)COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SATURATION VOLTAGE V CE (sat), VBE (sat) (V)SWITCHING TIME t on, ts, tf (µs) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (A) COLLECTOR CURRENT I C (A) MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE

Feb.1999 010 –110 –210 –310 110 010 310 210 110 010 010 –110 110 210 110 010 34 57 –110 23 4 5 7 010 ts tf Tj=25°C Tj=125°C IC=15A IB1=0.3A VCC=300V 0 0 200 400 600 800 Tj=125°C IB2=–0.5A –1A 100 0 0 20 60 100 120 16040 80 140 753275327532 444 TC=25°C 100µs 500µs1mstw=10ms DC 210 110 010 Tj=25°C Tj=125°C 753275327532 1.0 5327532 0.2 0.4 0.6 1.2 1.4 1.6 444 0.8 NON-REPETITIVE COLLECTOR DISSIPATION SECOND BREAKDOWN AREA SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA SWITCHING TIME t s, tf (µs) COLLECTOR-EMITTER VOLTAGE V CE (V)BASE REVERSE CURRENT –I B2 (A) COLLECTOR-EMITTER VOLTAGE V CE (V) CASE TEMPERATURE T C (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) TIME (s) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I C (A) MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W)

Feb.1999 010 –110 –210 –310 110 010 210 110 010 –110 210 110 010 –110 –110 010 110 210 210 110 7 5432010 754320 120 160 200 100 140 180 753275327532 444 Tj=25°C Tj=125°C VCC=300V IB1=–IB2=0.3A Irr Qrr trr 753275327532 2.0 327532 0.4 0.8 1.2 1.6 2.4 2.8 3.2 444 44 5 Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I F (A) TIME (s) MITSUBISHI TRANSISTOR MODULES QM15HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE Zth (j–c) (°C/ W) trr (µs)