QM100

QM100CY-H MITSUBISHI | Alldatasheet

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Feb.1999 MITSUBISHI TRANSISTOR MODULES QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm APPLICATION UPS, CVCF QM100CY-H

• Insulated Type
• UL Recognized Yellow Card No. E80276 (N) File No. E80271 21.5 LABEL Tab#110, t=0.5 8066 23 23 23.5 φ5.5 126612 C1E2E1C2B2X B1X 721 B2X B1X E2 E1

Feb.1999 ABSOLUTE MAXIMUM RATINGS (Tj=25°C, unless otherwise noted) ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise noted) Unit mA mA mA V V V µs µs µs °C/W °C/W °C/W Limits Min. Symbol VCEX (SUS) VCEX VCBO VEBO IC –IC PC IB –ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions I C=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) T C=25°C DC Peak value of one cycle of 60Hz (half wave) Charged part to case, AC for 1 minute Main terminal screw M5 Mounting screw M5 Typical value Ratings 600 600 600 100 100 620 1000 –40~+150 –40~+125 2500 1.47~1.96 15~20 1.47~1.96 15~20 420 Unit V V V V A A W A A V N·m kg·cm N·m kg·cm g Symbol I CEX ICBO IEBO VCE (sat) VBE (sat) –VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain Switching time Thermal resistance (junction to case) Contact thermal resistance (case to fin) Test conditions V CE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=100A, IB=1.3A –IC=100A (diode forward voltage) IC=100A, VCE=2V/5V VCC=300V, IC=100A, IB1=–IB2=2A Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) Typ. Max. 2.0 2.0 100 2.0 2.5 1.75 2.0 3.0 0.2 0.65 0.1 MITSUBISHI TRANSISTOR MODULES QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE

Feb.1999 310 210 110 010 210 110 010 –110 110 010 –210 –110 –110 –110 200 160 120 0 01 2345 Tj=25°C IB=0.6A IB=0.2A IB=0.4A IB=1.0A IB=2.0A 110 010 Tj=25°C VCE=2.0V 753275327532 210 310 110 010 310 210 110 010 444 Tj=25°C Tj=125°C VCE=5.0V VCE=2.0V 110 010 23 4 5 7 110 23 4 5 7 210 Tj=25°C Tj=125°C IB=1.3A VBE(sat) VCE(sat) 75327532 44 32 475 IC=100A IC=200A IC=50ATj=25°C Tj=125°C 753275327532 444 ton Tj=25°C Tj=125°C IB1=–IB2=2A VCC=300V tf ts PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) BASE CURRENT I B (A)COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SATURATION VOLTAGE V CE (sat), VBE (sat) (V)SWITCHING TIME t on, ts, tf (µs) COLLECTOR CURRENT I C (A)BASE-EMITTER VOLTAGE V BE (V) BASE CURRENT I B (A) COLLECTOR CURRENT I C (A) MITSUBISHI TRANSISTOR MODULES QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE

Feb.1999 –310 –210 –110 310 210 110 010 010 310 210 110 –110 100 0 0 20 60 100 120 16040 80 140 200 0 0 200 400 600 800 150 100 175 125 IB2=–2A 100 300 500 700 –5A Tj=125°C 110 010 23 4 5 7 010 23 4 5 7 110 ts tf VCC=300V IB1=2A IC=100ATj=25°C Tj=125°C 753275327532 444 TC=25°C 500µs 1ms DC tw=50µs 100µs 10ms 753275327532 0.20 0.16 0.12 0.04 7532 110 010 010 444 0.08 210 110 Tj=25°C Tj=125°C 010 NON–REPETITIVE COLLECTOR DISSIPATION SECOND BREAKDOWN AREA Zth (j–c) (°C/ W) SWITCHING TIME VS. BASE CURRENT (TYPICAL) REVERSE BIAS SAFE OPERATING AREA SWITCHING TIME t s, tf (µs) COLLECTOR-EMITTER VOLTAGE V CE (V)BASE REVERSE CURRENT –I B2 (A) COLLECTOR-EMITTER VOLTAGE V CE (V) CASE TEMPERATURE T C (°C) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) COLLECTOR-EMITTER REVERSE VOLTAGE –VCEO (V) TIME (s) COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A)DERATING FACTOR (%)COLLECTOR REVERSE CURRENT –I C (A) MITSUBISHI TRANSISTOR MODULES QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE

Feb.1999 753275327532 1.0 0.8 0.6 0.4 0.2 7532 110 010 010 –310 –210 –110 444 42 7 534 110 7 532010 754320 800 1000 210 4 400 200 600 –110 23 4010 57 23 4 010 110 010 110 210 trr Irr Qrr Tj=25°C Tj=125°C VCC=300V IB1=–IB2=2A 110 210 trr (µs) Zth (j–c) (°C/ W) Irr (A), Qrr (µc) SURGE COLLECTOR REVERSE CURRENT –ICSM (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT I F (A) TIME (s) MITSUBISHI TRANSISTOR MODULES QM100CY-H HIGH POWER SWITCHING USE INSULATED TYPE