QM0029EK UPI | Alldatasheet
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Signal Switch Pre-charge FET Absolute Maximum Ratings Thermal Data SOT23 Pin Configuration Product Summary G D S D G S
2 Rev A.02 D061616 QM0029EK P-Ch 100V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.09 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-0.1A --- 20 25 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -2.0 -2.8 -3.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4.6 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-80V , VGS=0V , TJ=25℃ --- --- 1 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±35 uA gfs Forward Transconductance VDS=-5V , ID=-0.01A --- 50 --- mS Qg Total Gate Charge VDS=-80V , VGS=-10V , ID=-0.1A --- 2.1 --- nC Qgs Gate-Source Charge --- 0.5 --- Qgd Gate-Drain Charge --- 0.8 --- Td(on) Turn-On Delay Time VDD=-50V , VGS=-10V , RG=3.3 ID=-0.1A --- 3.5 --- ns Tr Rise Time --- 19.7 --- Td(off) Turn-Off Delay Time --- 10.0 --- Tf Fall Time --- 29.3 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 44.6 --- pF Coss Output Capacitance --- 15.7 --- Crss Reverse Transfer Capacitance --- 10.2 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current1,4 VG=VD=0V , Force Current --- --- -0.22 A ISM Pulsed Source Current2,4 --- --- -0.55 A VSD Diode Forward Voltage2 VGS=0V , IS=-0.1A , TJ=25℃ --- --- -1.2 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
3 Rev A.02 D061616 QM0029EK P-Ch 100V Fast Switching MOSFETs Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Normalized VGS(th) vs. TJ Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
4 Rev A.02 D061616 QM0029EK P-Ch 100V Fast Switching MOSFETs 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Normalized Thermal Response (R θJA) PDM D = TON/T TJpeak = TA + PDM x RθJA TON T 0.02 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PULSE Fig.7 Capacitance Fig.9 Normalized Maximum Transient Thermal Impedance Fig.8 Safe Operating Area Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform