QM0018AB UPI | Alldatasheet
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z High Frequency Point-of-Load Synchronous Buck Converter z Networking DC-DC Power System z LED TV Back Light Absolute Maximum Ratings Thermal Data TO263 Pin Configuration Product Summary Rev A.01 D040212 G D S D
N-Ch 100V Fast Switching MOSFETs Preliminary Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.096 --- V/℃ RDS(ON) Static Drain-Source On-Resistance 2 V GS=10V , ID=30A --- 18 22 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2.5 --- 4.5 V △VGS(th) VGS(th) Temperature Coefficient --- -7 --- mV/℃ IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=30A --- 31 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 1.9 3.8 Ω Qg Total Gate Charge (10V) VDS=80V , VGS=10V , ID=30A --- 27.6 38.6 nC Qgs Gate-Source Charge --- 11.4 16 Qgd Gate-Drain Charge --- 7.9 11.1 Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3Ω, ID=30A --- 16.5 33 ns Tr Rise Time --- 35 63 Td(off) Turn-Off Delay Time --- 17.5 35 Tf Fall Time --- 12 24 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 1890 2645 pF Coss Output Capacitance --- 268 375 Crss Reverse Transfer Capacitance --- 67 94 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=30A 53 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 58 A ISM Pulsed Source Current 2,6 --- --- 130 A VSD Diode Forward Voltage 2 VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=30A , dI/dt=100A/µs , TJ=25℃ --- 22 --- nS Qrr Reverse Recovery Charge --- 20 --- nC Note : 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDS=25V,VGS=10V,L=0.1mH,IAS=41A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Guaranteed Avalanche Characteristics Diode Characteristics
N-Ch 100V Fast Switching MOSFETs Preliminary Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
N-Ch 100V Fast Switching MOSFETs Preliminary 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) PDM D = TON/T TJpeak = TC + PDM x RθJC TON T0.02 0.01 0.05 0.1 0.3 DUTY=0.5 SINGLE PULSE Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform