QM0007D

QM0007D UPI | Alldatasheet

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G S D Rev A.02 D062916 D The QM0007D is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The QM0007D meet the RoHS and Green Product requirement with full function reliability approved. High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power Tool Application

P-Ch 100V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=-250uA -100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=-1mA --- -0.0624 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 Ω VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.5 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4.5 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=-80V , VGS=0V , TJ=25℃ --- --- 10 uA VDS=-80V , VGS=0V , TJ=55℃ --- --- 100 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=-5V , ID=-1A --- 3 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 16 32 Ω Qg Total Gate Charge (-4.5V) VDS=-15V , VGS=-4.5V , ID=-1A --- 4.5 --- nC Qgs Gate-Source Charge --- 1.14 --- Qgd Gate-Drain Charge --- 1.5 --- Td(on) Turn-On Delay Time VDD=-50V , VGS=-10V , RG=3.3Ω ID=-1A --- 13.6 --- ns Tr Rise Time --- 6.8 --- Td(off) Turn-Off Delay Time --- 34 --- Tf Fall Time --- 3 --- Ciss Input Capacitance VDS=-15V , VGS=0V , f=1MHz --- 553 --- pF Coss Output Capacitance --- 29 --- Crss Reverse Transfer Capacitance --- 20 --- Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,4 VG=VD=0V , Force Current --- --- -4.1 A ISM Pulsed Source Current 2,4 --- --- -8.2 A VSD Diode Forward Voltage 2 V GS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

P-Ch 100V Fast Switching MOSFETs 0.0 0.3 0.6 0.9 1.2 0 0.25 0.5 0.75 1 -VDS ,Drain-to-Source Voltage (V) -ID Drain Current (A) VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V 500 510 520 530 540 550 2 4 6 8 10 -VGS (V) RDSON (mΩ) ID=0.5A 0.5 1.5 -VSD , Source-to-Drain Voltage (V) -IS Source Current(A) TJ=150℃ TJ=25℃ 2.5 7.5 0 2.5 5 7.5 10 QG , Total Gate Charge (nC) -VGS Gate to Source Voltage (V) VDS=-20V ID=-1A 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) (V) 0.5 1.0 1.5 2.0 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ

P-Ch 100V Fast Switching MOSFETs 100 1000 1 5 9 13 17 21 25 -VDS ,Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.02 0.05 0.1 0.2 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T DUTY=0.5 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform