QM0004D UPI | Alldatasheet
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Rev A.03 D062716 G S D D High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Load Switch
N-Ch 100V Fast Switching MOSFETs Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V GS=0V , ID=250uA 100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , ID=1mA --- 0.098 --- V/ ℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V , ID=10A --- 90 112 mΩ VGS=4.5V , ID=8A --- 95 120 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.57 --- mV/ ℃ IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance V DS=5V , ID=10A --- 13 --- S Rg Gate Resistance V DS=0V , VGS=0V , f=1MHz --- 2 4 Ω Qg Total Gate Charge (10V) VDS=80V , VGS=10V , ID=10A --- 26.2 36.7 nC Qgs Gate-Source Charge --- 4.6 6.44 Qgd Gate-Drain Charge --- 5.1 7.1 Td(on) Turn-On Delay Time VDD=50V , VGS=10V , RG=3.3Ω ID=10A --- 4.2 8.4 ns Tr Rise Time --- 8.2 15 Td(off) Turn-Off Delay Time --- 35.6 71 Tf Fall Time --- 9.6 19.2 Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 1535 2149 pF Coss Output Capacitance --- 60 84 Crss Reverse Transfer Capacitance --- 37 52 Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy 5 VDD=25V , L=0.1mH , IAS=5A 1.5 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current 1,6 VG=VD=0V , Force Current --- --- 12 A ISM Pulsed Source Current 2,6 --- --- 24 A VSD Diode Forward Voltage 2 V GS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=10A , dI/dt=100A/µs , TJ=25℃ --- 37 --- nS Qrr Reverse Recovery Charge --- 27.3 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics Guaranteed Avalanche Characteristics Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A 4.The power dissipation is limited by 150℃ junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Ch 100V Fast Switching MOSFETs 0 2 4 6 VDS , Drain-to-Source Voltage (V) ID Drain Current (A) VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V VSD , Source-to-Drain Voltage (V) IS Source Current(A) TJ=150℃ TJ=25℃ 0.2 0.6 1.4 1.8 -50 0 50 100 150 TJ ,Junction Temperature (℃ ) Normalized VGS(th) (V) 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 TJ , Junction Temperature (℃) Normalized On Resistance Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics Of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ
N-Ch 100V Fast Switching MOSFETs 100 1000 10000 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Capacitance (pF) F=1.0MHz Ciss Coss Crss 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 VDS (V) ID (A) 10us 1ms 10ms 100ms DC TC=25℃ Single Pulse 100us 0.001 0.01 0.1 t , Pulse Width (s) Normalized Thermal Response (RθJC) 0.01 0.05 0.1 0.2 DUTY=0.5 SINGLE PDM D = TON/T TJpeak = TC+PDMXRθJC TON T 0.02 Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform