SXT2907A SIEMENS | Alldatasheet

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PNP Silicon Switching Transistor SXT 2907 A Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration SXT 2907 A Q68000-A83002F SOT-89 B C E 1 2 3 Parameter Symbol Values Unit Collector-emitter voltage VCE0 60 V Collector-base voltage VCB0 60 Collector current IC 600 mA Total power dissipation,TS = 120 ˚C Ptot 1W Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 90 K/W Junction - soldering point Rth JS ≤ 30 Emitter-base voltage VEB0 5 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.

  • High current gain: 0.1 mA to 500 mA
  • Low collector-emitter saturation voltage 5.91

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC characteristics VCollector-emitter breakdown voltage IC = 10 mA V(BR)CE0 60 – – Collector-base breakdown voltage IC = 10µA V(BR)CB0 60 – – Emitter-base breakdown voltage IE = 10µA V(BR)EB0 5–– nA µA Collector-base cutoff current VCB = 60 V,IE = 0 VCB = 60 V,IE = 0,TA = 125 ˚C ICB0 –DC current gain IC = 100µA,VCE = 10 V IC = 1 mA,VCE = 10 V IC = 10 mA,VCE = 10 V IC = 150 mA,VCE = 10 V IC = 500 mA,VCE = 10 V hFE 100 100 100 300 VCollector-emitter saturation voltage IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VCEsat 0.4 1.6 Base-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA VBEsat 1.3 2.0 Emitter-base cutoff current V EB = 3 V,IC = 0 IEB0 ––1 0 nACollector cutoff current VCE = 30 V,VBE = 0.5 V ICEX ––5 0 Base cutoff current VCE = 30 V,VBE = 3 V IBL ––5 0 1) Pulse test conditions:t≤ 300µs,D ≤ 2 %.

atTA = 25 ˚C, unless otherwise specified. Test circuits Delay and rise time Storage and fall time MHzTransition frequency IC = 50 mA, VCE = 20 V,f = 100 MHz fT 200 – – pFOutput capacitance VCB = 10 V,f = 1 MHz C obo ––8 AC characteristics Input capacitance VEB = 2 V,f = 1 MHz C ibo ––3 0 UnitValuesParameter Symbol min. typ. max. ns ns ns ns Switching times VCC = 30 V,VBE = 0.5 V,IC = 150 mA, IB1 = 15 mA VCC = 6 V,IC = 150 mA, IB1 =IB2 = 15 mA td tr ts tf

Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC= f(tp) Collector-base capacitance C cb = f(VCB ) f = 1 MHz Transition frequencyfT = f(IC ) VCE = 20 V

Saturation voltageIC =f (VBE sat,VCE sat) hFE = 10 Storage timets = f(IC ) Delay timetd = f(IC ) Rise timetr = f(IC ) hFE = 10 Fall timetf = f(IC )

DC current gainhFE = f(IC )