SMBT2907 SIEMENS | Alldatasheet

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Technical content

PNP Silicon Switching Transistors SMBT 2907 SMBT 2907 A Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration SMBT 2907 SMBT 2907 A Q68000-A6501 Q68000-A6474 s2B s2F SOT-23 1 2 3 B E C 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu. Parameter Symbol Values Unit Collector-emitter voltage VCE0 V Collector current IC mA Junction temperature Tj ˚C Total power dissipation,TS = 77 ˚C Ptot mW Storage temperature range Tstg Collector-base voltage VCB0 Thermal Resistance Junction - ambient2) Rth JA ≤ 290 K/W 600 330 150 – 65 … + 150 Emitter-base voltage V EB0 40 60 SMBT 2907 SMBT 2907 A Junction - soldering point Rth JS ≤ 220

  • High DC current gain: 0.1 mA to 500 mA
  • Low collector-emitter saturation voltage
  • Complementary types: SMBT 2222, SMBT 2222 A (NPN) 5.91

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. Base-emitter saturation voltage1) IC = 150 mA,IB = 15 mA IC = 500 mA,IB = 50 mA Collector-emitter saturation voltage1) IC = 150 mA,IB = 15 mA IC = 500 mA,IB = 50 mA VCollector-emitter breakdown voltage IC = 10 mA SMBT 2907 SMBT 2907 A V(BR)CE0 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10µA SMBT 2907 SMBT 2907 A V(BR)CB0 Emitter-base breakdown voltage IE = 10µA V(BR)EB0 5–– nAEmitter cutoff current VEB = 3 V IEB0 ––1 0 nA nA µA µA Collector cutoff current VCB = 50 V SMBT 2907 VCB = 50 V SMBT 2907 A VCB = 50 V,TA = 150 ˚C SMBT 2907 VCB = 50 V,TA = 150 ˚C SMBT 2907 A ICB0 –DC current gain1) IC = 100µA,VCE = 10 V SMBT 2907 SMBT 2907 A IC = 1 mA,VCE = 10 V SMBT 2907 SMBT 2907 A IC = 10 mA,VCE = 10 V1) SMBT 2907 SMBT 2907 A IC = 150 mA,VCE = 10 V1) SMBT 2907 SMBT 2907 A IC = 500 mA,VCE = 10 V1) SMBT 2907 SMBT 2907 A hFE 100 100 100 100 300 300 VVCEsat 0.4 1.6 VBEsat 1.3 2.6 1) Pulse test conditions:t≤ 300 µs,D = 2 %.

atTA = 25 ˚C, unless otherwise specified. Test circuits Delay and rise time Storage and fall time MHzTransition frequency IC = 20 mA,VCE = 20 V,f = 100 MHz fT 200 – – AC characteristics pFOutput capacitance VCB = 10 V,f = 1 MHz C obo ––8 UnitValuesParameter Symbol min. typ. max. ns ns ns ns VCC = 30 V,IC = 150 mA, IB1 = 15 mA Delay time Rise time V CC = 6 V,IC = 150 mA, IB1 =IB2 = 15 mA Storage time Fall time t d tr tstg tf Input capacitance V EB = 0.5 V,f = 1 MHz C ibo ––3 0

Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC =f (tp) Collector-base capacitanceC CB = f(VCB ) f = 1 MHz Transition frequencyfT = f(IC ) VCE = 20 V

Saturation voltageIC = f(VBEsat,VCEsat) hFE =1 0 Storage time tstg = f(IC ) Delay timetd = f(IC ) Rise time tr =f(IC ) hFE =1 0 Fall time tf =f(IC ) SMBT 2907 SMBT 2907 A

DC current gainhFE = f(IC )