MPSA42 SIEMENS | Alldatasheet
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Technical content
Semiconductor Group 1 5.91 Type Marking Ordering Code Pin Configuration Package 1) 123 MPSA 42 MPSA 43 MPSA 42 MPSA 43 Q68000-A413 Q68000-A4809 E B C TO-92 Maximum Ratings Parameter Symbol Values Unit MPSA 42 MPSA 43 Collector-emitter voltage VCE0 300 200 V Collector-base voltage VCB0 300 200 Emitter-base voltage VEB0 6 Collector current IC 500 mA Base current IB 100 Total power dissipation, TC = 66 ˚C2) Ptot 625 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient Rth JA ≤ 200 K/W Junction - case2) Rth JC ≤ 135 1) For detailed information see chapter Package Outlines. 2) Mounted on AI-heat sink 15 mm× 25 mm × 0.5 mm. NPN Silicon High-Voltage Transistors MPSA 42 MPSA 43 123
- High breakdown voltage
- Low collector-emitter saturation voltage
- Complementary types: MPSA 92 MPSA 93 (PNP)
Electrical Characteristics
atTA = 25°C, unless otherwise specified. Parameter Symbol Limit Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA,IB = 0 MPSA 42 MPSA 43 V(BR)CE0 300 200 V Collector-base breakdown voltage IC = 100µA, IB = 0 MPSA 42 MPSA 43 V(BR)CB0 300 200 Emitter-base breakdown voltage IE = 100µA, IC = 0 V(BR)EB0 6–– Collector-base cutoff current VCB = 200 V MPSA 42 VCB = 160 V MPSA 43 VCB = 200 V, TA = 150°C MPSA 42 VCB = 160 V,TA = 150°C MPSA 43 ICB0 100 100 nA nA µA µA Emitter-base cutoff current VBE = 3 V,IC = 0 IEB0 – – 100 nA DC current gain1) IC =1 mA,VCE = 10 V IC =10 mA,VCE = 10 V IC =30 mA,VCE = 10 V hFE Collector-emitter saturation voltage IC = 20 mA,IC = 2 mA MPSA 42 MPSA 43 VCEsat 0.5 0.4 V Base-emitter saturation voltage IC = 20 mA,IB = 2 mA VBEsat – – 0.9 AC Characteristics Transition frequency IC = 20 mA,VCE = 10 V,f = 100 MHz fT – 70 – MHz Collector-base capacitance VCB = 20 V,f = 1 MHz MPSA 42 MPSA 43 C obo pF 1) Pulse test conditions:t≤ 300µs,D ≤ 2% .
Total power dissipationPtot =f (TA;TC ) Operating rangeIC =f(VCE ) TA = 25°C, D = 0 Permissible pulse loadRthJA =f (tp) Collector cutoff currentICB0 = f (TA) VCB =VCBmax
DC current gainhFE =f (IC ) VCE = 10 V Collector currentIC =f (VBE ) VCE = 10 V Transition frequencyfT =f (IC ) VCE = 20 V,f= 20 MHz,VCE = 10 V