SMBTA20 SIEMENS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

NPN Silicon AF Transistor SMBTA 20 5.91 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration SMBTA 20 Q6800-A6477s1C SOT-23 B E C 1 2 3 Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector current IC 100 mA Total power dissipation,TS =7 1˚ C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 310 K/W Junction - soldering point Rth JS ≤ 240 Emitter-base voltage VEB0 4 Peak collector current ICM 200 Peak base current IBM 200 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.

  • High DC current gain
  • Low collector-emitter saturation voltage

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC characteristics VCollector-emitter breakdown voltage IC = 1 mA V(BR)CE0 40 – – Emitter-base breakdown voltage IE = 100µA V(BR)EB0 4–– nA µA Collector-base cutoff current VCB = 30 V VCB = 30 V,TA = 150 ˚C ICB0 100 –DC current gain IC = 5 mA, VCE = 10 V hFE 40 – 400 VCollector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA VCEsat – – 0.25 nAEmitter-base cutoff current VEB = 4 V IEB0 ––2 0 MHzTransition frequency IC = 20 mA, VCE = 5 V,f = 100 MHz fT 125 – – pFOutput capacitance VCB = 10 V,f = 1 MHz C obo ––4 AC characteristics 1) Pulse test conditions:t≤ 300µs,D = 2 %.

Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC= f(tp) Collector-base capacitanceC CB0 = f(VCB0 ) Emitter-base capacitanceC EB0 = f(VEB0 ) f = 1 MHz Transition frequencyfT = f(IC ) VCE = 5 V, f= 100 MHz

Base-emitter saturation voltage IC =f (VBE sat), hFE =2 0 Collector cutoff currentICB0 = f(TA) VCB = 30 V Collector-emitter saturation voltage I C =f (VCE sat), hFE =2 0 DC current gainhFE = f(IC ) VCE =1V