TLE4261-2 SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • High accuracy 5 V – 2%
  • Very low-drop voltage
  • Very low quiescent current
  • Low starting-current consumption
  • Proof against reverse polarity
  • Input voltage up to 42 V
  • Overvoltage protection up to 65 V ( £ 400 ms)
  • Short-circuit-proof
  • External setting of reset delay
  • Integrated watchdog circuit
  • Wide temperature range
  • Overtemperature protection
  • Suitable for automotive use
  • EMC proofed (100 V/m) t Please also refer to the new pin compatible device TLE 4271 Type Ordering Code Package t TLE 4261-2 Q67000-A9110 P-TO220-7-1 t TLE 4261-2 G Q67000-A9140 P-DSO-20-6 (SMD) t TLE 4261-2 GL Q67006-A9193 P-TO220-7-8 (SMD) Functional Description TLE 4261-2 is a high accuracy 5-V low-drop voltage regulator in a P-TO220-7 or in a P- DSO package. The maximum input voltage is 42 V (65 V/£ 400 ms). The device can produce an output current of more than 500 mA. It is short-circuit-proof and incorporates temperature protection that disables the circuit at impermissibly high temperatures.

Semiconductor Group 2 1998-11-01 Application Description The IC regulates an input voltage VI in the range 6V< VI<4 0V t o VQrated =5 . 0V . A reset signal is generated for an output voltage VO of < 4.75 V. The reset delay can be set with an external capacitor. A connected microprocessor is monitored by the integrated watchdog circuit; if pulses are missing, the reset output is set low. The pulse repetition rate can be set within wide limits with the capacitor for reset delay. If this input is connected to a voltage of > 6 V, the watchdog function is deactivated. The device also features an inhibit input, which is activated by a voltage of > 6 V and then works on this input through internal hysteresis up to approx. 3 V. A voltage of < 2 V on the inhibit input turns off the regulator, current drain then dropping to max. 50 mA. Design Notes for External Components The input capacitor C I causes a low-resistant powerline and limits the rise times of the input voltage. The IC is protected against rise times up to 100 V/ms. It is possible to damp the tuned circuit consisting of supply inductance and input capacitance with a resistor of approx. 1 W in series to C I. The output capacitor maintains the stability of the regulating loop. Stability is guaranteed with a rating of 22 mF min. at an ESR of 3 W max. in the operating temperature range. Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and controls the base of the series PNP transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation of the power element. If the output voltage drops below 95.5% of its typical value for more than 2 ms, a reset signal is triggered on pin 3 and an external capacitor discharged on pin 5. The reset signal is not cancelled until the voltage on the capacitor has exceeded the upper switching threshold VDT . A positive-edge-triggered watchdog circuit monitors the connected microprocessor and will likewise trigger a reset if pulses are missing. The IC can be disabled by a low level on the inhibit input and the current consumption drops to < 50 mA. The IC also incorporates a number of circuits for protection against:

  • Overload
  • Overvoltage
  • Overtemperature
  • Reverse polarity

Semiconductor Group 3 1998-11-01 Pin Configuration (top view) Pin Definitions and Functions Pin No. Symbol Function 1 VI Input voltage; block a capacitor directly to ground on the IC. The capacitor rating will depend on the vihicle electric system. Oscillation of the output voltage can be damped by a resistor of approx. 1W in series with the input capacitor. 2I N H Inhibit; switches off the IC when low. 3Q R E S Reset output; open collector output controlled by the reset delay. 4G N D Ground 5 DRES Reset delay; wired to ground using a capacitor. 6W a t c h Watchdog ; monitors the microprocessor when active. VQ 5-V output; block to ground using a capacitor of ‡ 22-mF. ESR is £ 3 W in the operating temperature range. TLE 4261-2 TLE 4261-2 GL AEP00592 V I INH QRES GND DRES Watch VQ 43215 6 7

Semiconductor Group 4 1998-11-01 Pin No. Symbol Function 18 VI Input voltage; block a capacitor directly to ground on the IC. The capacitor rating will depend on the vihicle electric system. Oscillation of the output voltage can be damped by a resistor of approx. 1W in series with the input capacitor. 20 INH Inhibit; switches off the IC when low. 3Q R E S Reset output; open collector output controlled by the reset delay. 4 -7, 14 - 17 GND Ground 9D R E S Reset delay; wired to ground using a capacitor. 11 Watch Watchdog ; monitors the microprocessor when active. VQ 5-V output; block to ground using a capacitor of ‡ 22-mF. ESR is £ 3 W in the operating temperature range. 1, 2, 8, 10, 13, N.C. Not connected TLE 4261-2 G AEP01182 GND QV V I N.C. N.C. N.C. GND 5 GNDGND N.C. DRES QRES GND GND N.C. GND GND Watch N.C. INH

Semiconductor Group 5 1998-11-01 Block Diagram Overvoltage Monitoring Saturation Control and Protection RESET Generator Watchdog Temperature Sensor Adjustment BANDGAP Reference Inhibit (12) (9) (3) (11) 64(14-17) (4-7) 2(20) (18) Input Inhibit GND Watchdog Output RESET Delay RESET Output AEB00002 Control Amplifier Buffer

Semiconductor Group 6 1998-11-01 Absolute Maximum Ratings TJ = – 40 to 150 °C Parameter Symbol Limit Values Unit Remarks min. max. Input Input voltage VI – 42 42 V – VI –6 5 V t£ 400 ms Input current II –1 . 6 A – Inhibit Voltage V2 – 0.3 42 V – Current I2 –5 m A – Reset Output Voltage VR – 0.3 42 V – Current IR – – – internally limited Ground Current IGND –0 . 5 A – Reset Delay Voltage VD – 0.3 42 V – Current ID – – – internally limited Output Differential voltage VI– VQ –5 . 2 5VI V– Current IQ –1 . 4 A –

Semiconductor Group 7 1998-11-01 Temperature Junction temperature Tj –1 5 0 °C– Storage temperature Tstg – 50 150 °C– Operating Range Input voltage VI 1) –3 2 V – Junction temperature Tj – 40 150 °C– Thermal Resistance System-air RthSA –6 5 ( 7 0 )2) K/W – System-case RthSC – 3 (15) 2) K/W – 1) see diagram 2) Figures in parenthesis refer to TLE 4261-2 G. Absolute Maximum Ratings (cont’d) TJ = – 40 to 150 °C Parameter Symbol Limit Values Unit Remarks min. max.

Semiconductor Group 8 1998-11-01 Characteristics VI=1 3 . 5 V ; Tj=2 5°C; V5 ‡ 6 V (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max. Normal Operation Output voltage VQ 4.9 5.0 5.1 V IQ = 100 mA Output current IQ –– 5 0 mA0 V £ VI £ 2V ; V2 = VI; Output current IQ 500 1000 – mA VI = 17 V to 28 V Current consumption Iq = II– IQ Iq –– 3 . 5 m A IQ = 0 mA, VW >6 V Current consumption Iq = II– IQ Iq –– 1 0 m A 6 V £ VI £ 28 V IQ =1 5 0m A Current consumption Iq = II– IQ Iq –5 . 0 6 5 m A 6 V £ VI £ 28 V IQ =5 0 0m A Current consumption Iq = II– IQ Iq –4 0 8 0 m A VI £ 6V IQ =5 0 0m A Drop voltage VDR – 0.35 0.5 V VI = 4.5 V; IQ =0 . 5A Drop voltage VDR –0 . 2 0 . 3 V VI = 4.5 V; IQ =0 . 1 5A Load regulation DVQ –1 5 3 5 m V 2 5 m A £ IQ £ 500 mA Supply-voltage regulationDVQ –1 5 5 0 m V VI £ 6 V to 28 V; IQ =1 0 0m A Supply-voltage regulationDVQ –5 2 5 m V VI £ 6 V to 16 V; IQ =1 0 0m A Ripple rejection SVR –5 4 –d B f= 100 Hz; Vr =0 . 5VSS Temperature drift of output voltage a VQ –2 · 10–4 –1 / °C–

Semiconductor Group 9 1998-11-01 Inhibit Operation Current consumption I1 –– 5 0 mA V2 =2V ; IQ =0 Current consumption I2 – – 100 mA V2 =6V Switching threshold for inhibit V2 5.0 5.5 6.0 V IC turned ON Switching threshold for inhibit V2 2.0 2.7 3.7 V IC turned OFF Reset Generator Switching threshold VRT 94 95.5 97 % in % of VQ ; IQ >5 0 0m A ; VI=6V Saturation voltage, reset output VR –0 . 2 5 0 . 4 0 V IR =1m A Reverse current IR –– 1 mA VR =5V Charge current ID 18.75 25 31.25 mA VC =1 . 5V Switching threshold VST 0.9 1 1.1 V – Delay switching thresholdVDT 2.25 2.50 2.75 V – Saturation voltage, delay output VC – – 100 mV VI= 4.5 V and Id Delay time tD –1 0 –m s C D = 100 nF Delay time tt –2 – ms– Characteristics (cont’d) VI= 13.5 V; Tj=2 5°C; V5 ‡ 6 V (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max.

Semiconductor Group 10 1998-11-01 Watchdog Turn-OFF voltage VW 5.2 5.6 6.0 V – Discharge current ICD 5.6 7.5 9.4 mA VC =1 . 5V Switching voltage VCD 2.95 3.05 3.15 V – Pulse intervall TW –3 5 –m s C D =1 0 0n F General Data Turn-Off voltage VIOFF 41 43 45 V IQ <1m A Turn-Off hysteresis DVI –6 . 5 –V – Leakage current IQS –– 5 0 mA VQ = 0V ; VI= 45 V Reverse output current IQR –– 1 . 5 m A VQ = 5V ; VIand V2 open Characteristics (cont’d) VI=1 3 . 5 V ; Tj=2 5°C; V5 ‡ 6 V (unless otherwise specified) Parameter Symbol Limit Values Unit Test Condition min. typ. max.

Semiconductor Group 11 1998-11-01 Application Circuit Test Circuit AES01455 TLE 4261-2 nF 22 m F W 17Input

6 V to 40 V

k4.7 WMicrocontroller From AES01508 TLE 4261-2 1000 Fm VI+VR RV QV II Id IGND IQ ISC C D nF100 VC IR 22 Fm 4.7 kW QV-IVVDr = SVR VR VQD 470 nF = 20 log 23I WV

Semiconductor Group 12 1998-11-01 Time Responce in Watchdog Condition Timing with Watchdog OFF 3.3 V Overvoltage Spike Over- voltage AET00593 V ID IV OFF RTDV Over- temperature Shortcircuit on Output Undervoltage Secondary Spike d d V tC D ID tD tt< < OFFIV QV RTV IV CV V R V DT V ST WV WminV > 6 V

Semiconductor Group 13 1998-11-01 Drop Voltage versus Output Current Current Consumption versus Input Voltage Output Voltage versus Input Voltage Current Consumption versus Output Current AED00586 V 100 200 300 600 mA 400 800 mV = 4.5 VIV QI 400 100 300 500 600 700 200 Dr C= 125 = 25 CTj Tj AED00026 V Iq 10 20 30 50 V 100 120 mA R L =10 W I AED00027 V VQ 24 61 0 V V RL =10 W I AED00588 I 100 200 300 600 mA mA = 13.5 VIV QI 400 q

Semiconductor Group 14 1998-11-01 Charge Current ID and Discharge Current ICD versus Temperature Pulse Interval TW versus Temperature Switching Voltage V CD and V ST versus Temperature Output Voltage versus Temperature 40-40 0 µA I IV CV 16080 120 C T j AED01322 = 1.5 V = 13.5 V Id ICd 0.8 0.4 0.6 0.2 0-40 40 1.6 1.2 1.4 1.0 WT C12080 160 T j AED01324 ms V I = 13.5 V = 100 nFdC = 13.5 V -40 8004 0 V V I C120 160 jT AED01323 V V Cd STV AED00028 4.60 -40 VQ 0 40 80 160 4.70 4.80 4.90 5.00 5.10 5.20 V VI = 120 C j 13.5 V

Semiconductor Group 15 1998-11-01 Current Consumption of Inhibit at the Switching Point versus Temperature Input Step Responce Output Current versus Input Voltage Load Step Responce 40-40 0 A 120 100 20I

160 C80 120

m AED00595 -40 -10 V 01 0 2 0 5 0 V t -20 D I QDV mV tt 1=RF ms sm Q =C 22 ms AED00594 V IQ 10 20 30 50 V 0.2 0.4 0.6 0.8 1.0 1.2 mA = 25 I CTj AED00596 -200 -10 I 01 0 2 0 5 0 200 mA t -100 100 500 D Q QDV mV sm Q =C 22 ms

Semiconductor Group 16 1998-11-01 Package Outlines 10 +0.4 3.75+0.1 1.27 0.6 8.4±0.4 ±0.44.5 0.4+0.1 10.2 15.4±0.3 8.8-0.2 1.27+0.1 +0.1 2.8 4.6-0.2 2.6 8.6±0.3 ±0.3 ±0.4 19.5 max 1 x 45˚ at dam bar (max 1.8 from body) im Dichtstegbereich (max 1.8 vom Körper) -0.15 -0.15 M0.6 -0.210.2 1) 0.75 1) 0.75 GPT05108 P-TO220-7-1 (Plastic Transistor Single Outline) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mm

Semiconductor Group 17 1998-11-01 GPT05874 10.2 8.0 10.1 0.6 6 x 1.27 = 7.62 3.5 0.4 8.81.5 0.2 1.27 2.6 4.6 1.27 1) shear and punch direction burr free surface P-TO220-7-8 (Plastic Transistor Single Outline) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mmSMD = Surface Mounted Device

Semiconductor Group 18 1998-11-01 11 0 1120 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side GPS05094 2.65 max 0.1 0.2-0.1 2.45-0.2 +0.150.35 1.27 0.2 24x -0.27.6 1) 0.35 x 45˚ 0.238˚ max +0.09 +0.8 ±0.310.3 0.4 12.8-0.2 P-DSO-20-6 (Plastic Dual Small Outline) Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book “Package Information”. Dimensions in mmSMD = Surface Mounted Device