FP410L SIEMENS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Double differential magneto resistor on same carrier
  • Accurate intercenter spacing
  • High operating temperature range
  • High output voltage
  • Compact construction
  • Available in strip form for automatic assembly Type Ordering Code FP 410 L (4×80) FM Q65410-L80E (taped) FP 410 L (4×80) FM Q65110-L80F (singular) Typical applications
  • Incremental angular encoders
  • Detection of sense of rotation
  • Detection of speed
  • Detection of position

FP 410 L (4x 80) FM The double differential magneto resistor assembly consists of two pairs of magneto resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be magnetically controlled), which are fixed to a ferrite substrate. Contact to the magneto resistors is achieved using a copper/polyimide carrier film known as Micropack. The basic resistance of each of the magnetic resistors is 80Ω . The two series coupled pairs of magnetic resistors are actuated by an external magnetic field or can be biased by a permanent magnet and actuated by a soft iron target.

FP 410 L (4x 80) FM Maximum ratings Characteristics (TA = 25°C) Parameter Symbol Value Unit Operating temperature TA – 40 / + 175 °C Storage temperature Tstg – 40 / + 185 °C Power dissipation1) Ptot 1000 mW Supply voltage2) (B = 0.3 T) VIN 8V Thermal conductivity –attached to heatsink –in still air G th case G th A ≥ 20 mW/K Basic resistance (I≤ 1 mA;B = 0 T) R01-3 R04-6 110… 220 Ω Center symmetry3) M ≤ 6% Relative resistance change (R = R01-3,R04-6 atB = 0 T) B =± 0.3 T4) B =± 1 T RB/R0 > 1.7 > 7 Temperature coefficient B = 0 T B =± 0.3 T B =± 1 T TC R – 0.16 – 0.38 – 0.54 %/K %/K %/K 1) Corresponding to diagramPtot =f(Tcase) 2) Corresponding to diagramVIN =f(Tcase) 4) 1 T = 1 Tesla = 104 Gauss M R 01 2– R 02 3–– R 01 2– M R 04 5– R 05 6–– R 04 5–

FP 410 L (4x 80) FM Max. power dissipation versus temperature Ptot =f(T),T =Tcase,TA Typical MR resistance versus temperature R01-3, 4-6 =f(TA),B = Parameter Maximum supply voltage versus temperature VIN 1-3, 4-6 =f(T),B = 0.3 T Typical MR resistance versus magnetic inductionB