SFH7221_12 OSRAM | Alldatasheet

Document overview

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Technical content

Features

 SMT package with IR emitter (880 nm) and Si-phototransistor  Suitable for SMT assembly  Available on tape and reel  Emitter und detector can be controlled separately

Applications

 Data transmission  Lock bar  Infrared interface

Die angegebenen Grenzdaten gelten für einen Chip. The stated maximum ratings refer to one chip. Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit IRED Transistor Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Tj + 100 + 100 °C Durchlassstrom (LED) Forward current (LED) IF 100 – mA Kollektorstrom (Transistor) Collector current (Transistor) IC – 15 mA Stoßstrom Surge current t ≤ 10 μs, D = 0.005 IFM 2500 75 mA Sperrspannung (LED) Reverse voltage (LED) VR 5 – V Kollektor-Emitter Spannung (Transistor) Collector-emitter voltage (Transistor) VCE – 35 V Verlustleistung Total power dissipation Ptot 180 165 mW Wärmewiderstand Sperrschicht / Umgebung Thermal resistance junction / ambient Montage auf PC-Board1) (Padgröße ≥ 16 mm2) mounting on pcb1) (pad size ≥ 16 mm2) Sperrschicht / Lötstelle junction / soldering joint Rth JA Rth JS 500 400 450 K/W K/W 1) PC-board: G30/FR4

Kennwerte IRED (TA = 25 °C) Characteristics IRED Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength of radiation IF = 100 mA, tp = 20 ms λpeak 880 nm Spektrale Bandbreite bei 50% von Imax, IF = 100 mA Spectral bandwidth at 50% of Imax, IF = 100 mA Δλ 80 nm Abstrahlwinkel Viewing angle ϕ ± 60 Grad deg. Aktive Chipfläche Active chip area A 0.09 mm2 Abmessungen der aktiven Chipfläche Dimensions of active chip area L × B L × W 0.3 × 0.3 mm² Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10% Switching times, Ie from 10% to 90 % and from 90% to 10% IF = 100 mA, RL = 50 Ω tr, tf 0.5 μs Kapazität Capacitance VR = 0 V, f = 1 MHz Co 15 pF Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 μs VF VF 1.5 (≤ 1.8) 3.0 (≤ 3.8) V V Sperrstrom Reverse current VR = 5 V IR 0.01 (≤ 1) μA Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms Φe 23 mW Temperaturkoeffizient von Ie bzw. Φe Temperature coefficient of Ie bzw. Φe IF = 100 mA, IF = 100 mA TCI – 0.5 %/K

IRED Radiation Characteristics Irel = f (ϕ) Phototransistor Directional Characteristics Srel = f (ϕ) Temperaturkoeffizient von VF Temperature coefficient of VF IF = 100 mA TCV – 2 mV/K Temperaturkoeffizient von λ Temperature coefficient of λ IF = 100 mA TCλ + 0.25 nm/K Strahlstärke Ie in Achsrichtung gemessen bei einem Raumwinkel Ω = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of Ω = 0.01 sr Bezeichnung Parameter Symbol Symbol Werte Values Einheit Unit Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie > 4 mW/sr Strahlstärke Radiant intensity IF = 1 A, tp = 100 μs Ie typ. 48 mW/sr Kennwerte IRED (TA = 25 °C) Characteristics IRED (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit 0.2 0.4 1.0 0.8 0.6 ϕ 1.0 0.8 0.6 0.4 50˚ 60˚ 70˚ 80˚ 90˚ 100˚

Kennwerte Fototransistor (TA = 25 °C, λ = 880 nm) Characteristics Phototransistor Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 990 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 440 … 1150 nm Bestrahlungsempfindliche Fläche (∅ 240 μm) Radiant sensitive area (∅ 240 μm) A 0.038 mm2 Abmessung der Chipfläche Dimensions of chip area L × B 0.45 × 0.45 mm × mm Abstand Chipoberfläche zu Gehäuseoberfläche Distance chip front to case surface H 0.5 … 0.7 mm Halbwinkel Half angle ϕ ± 60 Grad deg. Kapazität Capacitance VCE = 0 V, f = 1 MHz, E = 0 CCE 5.0 pF Dunkelstrom Dark current VCE = 25 V, E = 0 ICEO 1 (≤ 200) nA Fotostrom Photocurrent Ee = 0.1 mW/cm2, VCE = 5 V IPCE ≥ 16 μA Anstiegszeit/Abfallzeit Rise time/Fall time IC = 1 mA, VCC = 5 V, RL = 1 kΩ tr, tf 7 μs Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage IC = 5 μA, Ee = 0.1 mW/cm2 VCEsat 150 mV

Forward Current IF = f (VF) TA = 25 °C Max. Permissible Forward Current IF = f (TA) OHR00881 FV -210 -110 010 110 01 2 3 4 5 6 V 8 AΙ F OHR00883 FΙ 100 120 20 40 60 80 100 120 mA TA RthjA = 450 K/W Rel Luminous Intensity IV / IV (10 mA) = f (IF), TA = 25 °C Relative Spectral Emission Irel = f (λ) OHR00878 Ι e FΙ -210 -110 010 110 210 010 10 1 10 2 10 4mA eΙ (100mA) 310 750 Ι rel OHR00877 800 850 900 950 nm 1000 100 λ Perm. Pulse Handling Capability IF = f (tp), Duty cycle D = parameter, TA = 25 °C Perm. Pulse Handling Capability IF = f (tp), Duty cycle D = parameter, TA = 85 °C Ι F OHR00886 210 310 410 mA -510 s FΙ T DC 0.005=D pt T t p pt 0.5 0.2 0.1 0.01 0.02 0.05 10-4 10-3 10-2 10-1 100 101 102 1010 -2-3-4-5 1010 10 FI Pt =D T 210-1 10 tp 10 s 10 OHF02621 T tP IF 0.02 0.05 0.1 D = 0.005 0.01 110 102 103 104 mA 0.5 0.2

Rel. Spectral Sensitivity Srel = f (λ) Total Power Dissipation Ptot = f (TA) Dark Current ICEO = f (TA), VCE = 5 V, E = 0 OHF00207 400 Srel λ nm 500 600 700 800 900 1100 100 OHF00871 totP 120 160 mW 200 20 40 60 80 ˚C 100 TA T OHF01530 A CEOΙ -110 10 0 10 1 10 2 10 3 -25 nA 0 25 50 75 100˚C Photocurrent IPCE = f (VCE), Ee = Parameter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 Photocurrent IPCE = f (Ee), VCE = 5 V V OHF01529 CE PCEΙ 010 10 -2 10 -1 mA V5 10 15 20 25 30 35 mW cm 20.1 0.25 2cm mW 0.5 2cm mW 1 2cm mW V OHF01528 CE -210 CEC 10 -1 10 0 10 1 10 2 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 pF E OHF00312 e PCEΙ 10 -1 10 -3 10 -2 10 0 10 0 10 1 10 2 10 3 W/cm 2m Aμ Dark Current ICEO = f (VCE), E = 0 Photocurrent IPCE/IPCE25° = f (TA), VCE = 5 V V OHF01527 CE CEOΙ -310 10 -2 10 -1 10 0 10 1 0 5 10 15 20 25 30 35 V nA T OHF01524 A -25 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 Ι PCE PCEΙ 25 C

Maßzeichnung Package Outlines Maße in mm (inch) / Dimensions in mm (inch). Empfohlenes Lötpaddesign Reflow Löten Recommended Solder Pad Reflow Soldering GPLY6965 CC EA 0.4 (0.016) 0.6 (0.024) 0.18 (0.007) 0.12 (0.005) 0.1 (0.004) typ 0.5 (0.020) 1.1 (0.043) 3.7 (0.146) 3.3 (0.130) 0.7 (0.028) 0.9 (0.035) 1.7 (0.067) 2.1 (0.083) 0.6 (0.024) 0.8 (0.031) 2.3 (0.091) 2.1 (0.083) 2.6 (0.102) 3.0 (0.118) 3.0 (0.118) 3.4 (0.134) (2.4 (0.094)) Package marking OHLPY439 Padgeometrie für verbesserte Wärmeableitung improved heat dissipation Paddesign for Lötstoplack Solder resist 1.1 (0.043) 4.5 (0.177) 1.5 (0.059) 2.6 (0.102) 3.3 (0.130) 0.5 (0.020) 7.5 (0.295) 0.4 (0.016) Cathode marking Kathoden Markierung / Cu Fläche / 12 mm per pad2 Cu-area 3.3 (0.130)

Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 Reflow Lötprofil für bleifreies Löten (nach J-STD-020C) Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C) Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserv ed. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of tr ansport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or system s must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. OHLA0687 T t s 120 s max 100 150 200 250 300 Ramp Up 100 s max 50 100 150 200 250 300 Ramp Down

6 K/s (max)

3 K/s (max)

25 ˚C 30 s max 260 ˚C+0 ˚C -5 ˚C 245 ˚C ±5 ˚C 240 ˚C 255 ˚C 217 ˚C Maximum Solder Profile Recommended Solder Profile 235 ˚C-0 ˚C +5 ˚C Minimum Solder Profile 10 s min

720-SFH7221-Z - Osram Opto Semiconductor SFH 7221-Z