Q65110A2701

Q65110A2701 OSRAM | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

Features

 Especially suitable for applications from 400 nm to 1100 nm  Short switching time (typ. 20 ns)  DIL plastic package with high packing density  BPW 34 S/BPW 34 SR: suitable for reflow soldering

Applications

 Photointerrupters  IR remote controls  Industrial electronics  For control and drive circuits

B P W3 4 , B P W3 4S , B P W3 4S R Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 … + 100 ° C Sperrspannung Reverse voltage VR 32 V Verlustleistung, TA = 25 ° C Total power dissipation Ptot 150 mW Kennwerte (TA = 25 ° C, Normlicht A, T = 2856 K) Characteristics (TA = 25 ° C, standard light A, T = 2856 K) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Fotoempfindlichkeit, VR = 5 V Spectral sensitivity S 80 (≥50) nA/Ix Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 850 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax λ 400 … 1100 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 7.00 mm 2 Abmessung der bestrahlungsempfindlichen Fläche Dimensions of radiant sensitive area L × B L × W 2.65 × 2.65 mm × mm Halbwinkel Half angle ϕ± 60 Grad deg. Dunkelstrom, VR = 10 V Dark current IR 2 (≤ 30) nA Spektrale Fotoempfindlichkeit, λ = 850 nm Spectral sensitivity Sλ 0.62 A/W Quantenausbeute, λ = 850 nm Quantum yield η 0.90 Electrons Photon Leerlaufspannung, Ev = 1000 Ix Open-circuit voltage VO 365 (≥ 300) mV

B P W3 4 , B P W3 4S , B P W3 4S R 2007-05-23 3 Kurzschlussstrom, Ev = 1000 Ix Short-circuit current ISC 80 µA Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA tr, tf 20 ns Durchlassspannung, IF = 100 mA, E = 0 Forward voltage VF 1.3 V Kapazität, VR = 0 V, f = 1 MHz, E = 0 Capacitance C0 72 pF Temperaturkoeffizient von VO Temperature coefficient of VO TCV – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient of ISC TCI 0.18 %/K Rauschäquivalente Strahlungsleistung Noise equivalent power VR = 10 V, λ = 850 nm NEP 4.1 × 10– 14 Nachweisgrenze, VR = 10 V, λ = 850 nm Detection limit D* 6.6 × 1012 Kennwerte (TA = 25 ° C, Normlicht A, T = 2856 K) Characteristics (TA = 25 ° C, standard light A, T = 2856 K) (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit W Hz cm Hz×

B P W3 4 , B P W3 4S , B P W3 4S R 2007-05-23 4 Relative Spectral Sensitivity Srel = f (λ) Dark Current IR = f (VR), E = 0 Directional Characteristics Srel = f (ϕ) λ OHF00078 relS 400 100 500 600 700 800 900 nm 1100 OHF00080 Ι R RV 0 5 10 15 V 20 1000 2000 3000 4000 pA OHF01402 40 30 20 10 20 40 60 80 100 1200.40.60.81.0 ϕ 0.2 0.4 0.6 0.8 1.0 100 Photocurrent IP = f (Ev), VR = 5 V Open-Circuit Voltage VO = f (Ev) Capacitance C = f (VR), f = 1 MHz, E = 0 E OHF01066 V 010 PΙ -110 10 1 10 2 10 4 10 0 10 1 10 2 10 34 10 310 210 110 10 0 VO µAm V Ι P VO 10 3 lx V OHF00081 R -210 C 0 -110 010 110 210V pF 100 Total Power Dissipation Ptot = f (TA) Dark Current IR = f (TA), VR = 10 V, E = 0 T OHF00958 A totP 0 20 40 60 80 ˚C 100 mW 100 120 140 160 T OHF00082 A -110 0 RΙ 10 0 10 1 10 2 10 3 nA 20 40 60 80 ˚C 100

B P W3 4 , B P W3 4S , B P W3 4S R 2007-05-23 5 Maßzeichnung Package Outlines Maße in mm (inch) / Dimensions in mm (inch). GEOY6643 4.0 (0.157) 4.5 (0.177) 5.4 (0.213) 4.9 (0.193) 0.6 (0.024) 0.4 (0.016) 0.6 (0.024) 0.4 (0.016) 1.2 (0.047) 0.7 (0.028) 0.3 (0.012) 0.5 (0.020) 0.8 (0.031) 0.6 (0.024) Cathode marking 0.6 (0.024) 0.8 (0.031) 1.9 (0.075) 2.2 (0.087) 3.0 (0.118) 3.5 (0.138) 0.6 (0.024) 0.4 (0.016) Chip position 0.4 (0.016) 0.6 (0.024) 0.35 (0.014) 0.2 (0.008) 0 ... 5˚ 5.08 (0.200) spacing 1.4 (0.055) Photosensitive area 1.8 (0.071) BPW 34 4.5 (0.177) 4.3 (0.169) 4.0 (0.157) 3.7 (0.146) 1.5 (0.059) 1.7 (0.067) 0.9 (0.035) 0.7 (0.028) Photosensitive area Cathode lead GEOY6863 0.3 (0.012) 6.7 (0.264) 6.2 (0.244) 1.2 (0.047) 1.1 (0.043) (0...0.004) 0...5˚ 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) Chip position 0...0.1 BPW 34 S

B P W3 4 , B P W3 4S , B P W3 4S R Maße in mm (inch) / Dimensions in mm (inch). 4.5 (0.177) 4.3 (0.169) 4.0 (0.157) 3.7 (0.146) 1.5 (0.059) 1.7 (0.067) 0.9 (0.035) 0.7 (0.028) Photosensitive area Cathode lead GEOY6916 0.3 (0.012) 6.7 (0.264) 6.2 (0.244) 1.2 (0.047) 1.1 (0.043) (0...0.004) 0...5˚ 0.2 (0.008) 0.1 (0.004) 1.1 (0.043) 0.9 (0.035) 0...0.1 Chip position BPW 34 SR

B P W3 4 , B P W3 4S , B P W3 4S R 2007-05-23 7 Lötbedingungen BPW 34 S Vorbehandlung nach JEDEC Level 4 Soldering Conditions BPW 34 SR Preconditioning acc. to JEDEC Level 4 Reflow Lötprofil für bleifreies Löten (nach J-STD-020C) Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C) Wellenlöten (TTW) BPW 34 (nach CECC 00802) TTW Soldering (acc. to CECC 00802) OHLA0687 T t s 120 s max 100 150 200 250 300 Ramp Up 100 s max 50 100 150 200 250 300 Ramp Down

6 K/s (max)

3 K/s (max)

25 ˚C 30 s max 260 ˚C+0 ˚C -5 ˚C 245 ˚C±5 ˚C 240 ˚C 255 ˚C 217 ˚C Maximum Solder Profile Recommended Solder Profile 235 ˚C-0 ˚C +5 ˚C Minimum Solder Profile 10 s min OHLY0598 50 100 150 200 250 100 150 200 250 300 T t C s 235 C 10 s C... 260 1. Welle 1. wave 2. Welle 2. wave

5 K/s 2 K/sca 200 K/s

CC... 130100

2 K/s

Zwangskühlung forced cooling Normalkurve standard curve Grenzkurven limit curves

B P W3 4 , B P W3 4S , B P W3 4S R Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserv ed. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. Y ou must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or system s must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.