Q65110A2700 | DigiCamel IC Datasheet

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Read Q65110A2700 online.

BPW-34-FS AMSOSRAM | Alldatasheet

Document overview

Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
PDF pages: 19

Technical content

2 | Version 1.10 | 2025-06-04 DIL SMT BPW 34 FS Silicon PIN Photodiode with Daylight Blocking Filter

Applications

Access Control & Security - Factory Automation - Robotics

Features

Package: black epoxy - Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Especially suitable for applications from 780 nm to 1100 nm - Short switching time (typ. 20 ns) - DIL plastic package with high packing density - Suitable for reflow soldering

3 | Version 1.10 | 2025-06-04

Ordering Information

Type Photocurrent 1) Photocurrent Ordering Code typ. Ee = 1 mW/cm²; λ = 950 nm; VR = 5 V Ee = 1 mW/cm²; λ = 950 nm; VR = 5 V IP IP BPW 34 FS-Z ≥ 44 µA 50 µA Q65110A2700

4 | Version 1.10 | 2025-06-04 Maximum Ratings TA = 25 °C Parameter Symbol Values Operating Temperature Top min. max. -40 °C 100 °C Storage temperature Tstg min. max. -40 °C 100 °C Reverse voltage VR max. 16 V Reverse voltage t ≤ 2 min; TA = 25 °C VR max. 32 V Total power dissipation Ptot max. 150 mW ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) VESD max. 2 kV

5 | Version 1.10 | 2025-06-04 Characteristics TA = 25 °C Parameter Symbol Values Wavelength of max sensitivity λS max typ. 950 nm Spectral range of sensitivity λ10% typ. 780 ... 1100 nm Radiant sensitive area A typ. 7.02 mm² Dimensions of active chip area L x W typ. 2.65 x 2.65 mm x mm Half angle φ typ. 60 ° Dark current VR = 10 V IR typ. max. 2 nA 30 nA Spectral sensitivity of the chip λ = 950 nm Sλ typ. 0.7 A / W Quantum yield of the chip λ = 950 nm η typ. 0.91 Electrons / Photon Open-circuit voltage Ee = 0.5 mW/cm²; λ = 950 nm VO min. typ. 275 mV 330 mV Short-circuit current Ee = 0.5 mW/cm²; λ = 950 nm ISC typ. 25 µA Rise time VR = 5 V; RL = 50 Ω; λ = 850 nm tr typ. 0.02 µs Fall time VR = 5 V; RL = 50 Ω; λ = 850 nm tf typ. 0.02 µs Forward voltage IF = 100 mA; E = 0 VF typ. 1.3 V Capacitance VR = 0 V; f = 1 MHz; E = 0 C0 typ. 72 pF Temperature coefficient of voltage TCV typ. -2.6 mV / K Temperature coefficient of short-circuit current λ = 950 nm TCI typ. 0.18 % / K Noise equivalent power VR = 10 V; λ = 950 nm NEP typ. 0.036 pW / Hz1/2 Detection limit D* typ. 7.3e12 cm x Hz1/2 / W

6 | Version 1.10 | 2025-06-04 Relative Spectral Sensitivity 2), 3) Srel = f (λ) λ OHF00368 relS 700 100 nm800 900 1000 1200 Directional Characteristics 2), 3) Srel = f (φ) OHF01402 40 30 20 10 20 40 60 80 100 1200.40.60.81.0 ϕ 0.2 0.4 0.6 0.8 1.0 100

7 | Version 1.10 | 2025-06-04 Photocurrent/Open-Circuit Voltage 2), 3) IP (VR = 5 V) / VO = f (Ee) E OHF01097 e 010 P/g44 10 1 10 2 10 410 -1 10 0 10 1 10 2 410 310 210 110 10 0 VO /g80Am V /g44P VO 310 /g80W/cm 2 Dark Current 2), 3) IR = f (VR); E = 0 OHF00080 ΙR RV 0 5 10 15 V 20 1000 2000 3000 4000 pA Capacitance 2), 3) C = f (VR); f = 1MHz; E = 0; TA = 25°C V OHF00081 R -210 C 0 -110 010 110 210V pF 100

8 | Version 1.10 | 2025-06-04 Dark Current 2) IR = f (TA); E = 0; VR = 10 V OHF05717 AT 10-1 ˚C02 04 06 08 0 100 RI nA 100 101 102 103 104

9 | Version 1.10 | 2025-06-04 Dimensional Drawing 4) Further Information: Approximate Weight: 43.0 mg Package marking: Cathode

10 | Version 1.10 | 2025-06-04 Recommended Solder Pad 4)

11 | Version 1.10 | 2025-06-04 Reflow Soldering Profile Product complies to MSL Level 4 acc. to JEDEC J-STD-020E 00 s OHA04525 100 150 200 250 300 50 100 150 200 250 300 t T St t Pt Tp240 ˚C 217 ˚C 245 ˚C 25 ˚C L Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit Minimum Recommendation Maximum Ramp-up rate to preheat*) 25 °C to 150 °C 2 3 K/s Time tS TSmin to TSmax tS 60 100 120 s Ramp-up rate to peak*) TSmax to TP 2 3 K/s Liquidus temperature TL 217 °C Time above liquidus temperature tL 80 100 s Peak temperature TP 245 260 °C Time within 5 °C of the specified peak temperature TP - 5 K tP 10 20 30 s Ramp-down rate* TP to 100 °C 3 6 K/s Time 25 °C to TP 480 s All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

12 | Version 1.10 | 2025-06-04 Taping 4) OHAY2287 1.5 (0.059) 4 (0.157) 0.8 (0.031) 2 (0.079) 4.1 (0.161) 1.75 (0.069) 5.5 (0.217) 12 (0.472) 6.9 (0.272) Cathode/Collector Side

13 | Version 1.10 | 2025-06-04 Tape and Reel 5) Reel Dimensions A W Nmin W1 W2 max Pieces per PU 180 mm 12 + 0.3 / - 0.1 mm 60 mm 12.4 + 2 mm 18.4 mm 1500

14 | Version 1.10 | 2025-06-04 Barcode-Product-Label (BPL) Dry Packing Process and Materials 4) 2+$ 265$ 0RLVWXUHVHQVLWLYHODEHORUSULQW %DUFRGHODEHO 'HVLFFDQW +XPLGLW\\LQGLFDWRU %DUFRGHODEHO 265$0 3OHDVHFKHFNWKH+,&LPPLGLDWHO\\DIWHU EDJRSHQLQJ 'LVFDUGLIFLUFOHVRYHUUXQ $YRLGPHWDOFRQWDFW :(7 'RQRWHDW &RPSDUDWRU FKHFNGRW SDUWVVWLOODGHTXDWHO\\GU\\ H[DPLQHXQLWVLIQHFHVVDU\\ H[DPLQHXQLWVLIQHFHVVDU\\ EDNHXQLWV EDNHXQLWV ,IZHW FKDQJHGHVLFFDQW ,IZHW +XPLGLW\\,QGLFDWRU 0,/, ,IZHW RLVWXUH /HY HO )ORRUWLP H+RXUV RLVWXU H/HYHO )ORRU WLP H+RXUV D +XP LGLW\\,QGLFDWRU&DUGLV! ZKH QUHDGDW ə&sə&RU UHIORZYDSRUSKD VHUHIORZ RU HTXLYDOHQWSURFHVVLQJ SH DNSDFNDJH $IWHUWKLVEDJLVRSHQH G GHY LFHVWKDWZL OOEH VXEMHFWHGWRLQIUDU HG 6KHOIOLIHLQVHDOHGEDJ P RQWKVDW ə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oisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.

15 | Version 1.10 | 2025-06-04 Notes Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There- fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810. For further application related information please visit https://ams-osram.com/support/application-notes

16 | Version 1.10 | 2025-06-04 Disclaimer Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version on our website. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Product and functional safety devices/applications or medical devices/applications Our components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices. Our products are not qualified at module and system level for such application. In case buyer – or customer supplied by buyer – considers using our components in product safety devices/ applications or medical devices/applications, buyer and/or customer has to inform our local sales partner immediately and we and buyer and /or customer will analyze and coordinate the customer-specific request between us and buyer and/or customer.

17 | Version 1.10 | 2025-06-04 Glossary 1) Photocurrent: The photocurrent values are measured (by irradiating the devices with a homogenous light source and applying a voltage to the device) with a tolerance of ±11 %. 2) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic- es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif- fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 3) Testing temperature: TA = 25°C (unless otherwise specified) 4) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm. 5) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.

18 | Version 1.10 | 2025-06-04

Revision History

1.5 2019-06-24 Disclaimer 1.6 2019-07-10 Barcode-Product-Label (BPL) Notes 1.7 2019-09-26 Ordering Information 1.8 2020-02-14 Barcode-Product-Label (BPL) Notes 1.9 2020-03-02 Features 1.10 2025-06-04 Dimensional Drawing New Layout Recommended Solder Pad

Product Information

Q65110A2700 specifications and overview.

Summary

Silicon PIN Photodiode with Daylight Blocking Filter Version 1.10 2025-06-04

Description

Silicon PIN Photodiode with Daylight Blocking Filter Version 1.10 2025-06-04

Source title Q65110A2700 Datasheet(PDF) - ams-OSRAM AG

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