Q65110A2672

BP-104-FAS AMSOSRAM | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 19

Technical content

1 | Version 1.6 | 2024-12-17 www.osram-os.com BP 104 FAS Datasheet Published by ams-OSRAM AG Tobelbader Strasse 30, 8141 Premstaetten, Austria Phone +43 3136 500-0 ams-osram.com © All rights reserved

2 | Version 1.6 | 2024-12-17 DIL SMT BP 104 FAS Silicon PIN Photodiode with Daylight Blocking Filter

Applications

• Access Control & Security - Factory Automation - Robotics

Features

• Package: black epoxy - Qualifications: The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - Especially suitable for applications from 730 nm to 1100 nm - Short switching time (typ. 20 ns) - Suitable for SMT

3 | Version 1.6 | 2024-12-17

Ordering Information

Type Photocurrent 1) Photocurrent Ordering Code typ. Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V IP IP BP 104 FAS-Z ≥ 25 µA 34 µA Q65110A2672

4 | Version 1.6 | 2024-12-17 Maximum Ratings TA = 25 °C Parameter Symbol Values Operating Temperature Top min. max. -40 °C 100 °C Storage temperature Tstg min. max. -40 °C 100 °C Reverse voltage VR max. 20 V Total power dissipation Ptot max. 150 mW ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) VESD max. 2 kV

5 | Version 1.6 | 2024-12-17 Characteristics TA = 25 °C Parameter Symbol Values Wavelength of max sensitivity λS max typ. 880 nm Spectral range of sensitivity λ10% typ. 730 ... 1100 nm Radiant sensitive area A typ. 4.84 mm² Dimensions of active chip area L x W typ. 2.2 x 2.2 mm x mm Half angle φ typ. 60 ° Dark current VR = 10 V IR typ. max. 2 nA 30 nA Spectral sensitivity of the chip λ = 870 nm Sλ typ. 0.63 A / W Quantum yield of the chip λ = 870 nm η typ. 0.90 Electrons / Photon Open-circuit voltage Ee = 0.5 mW/cm²; λ = 870 nm VO min. typ. 250 mV 330 mV Short-circuit current Ee = 0.5 mW/cm²; λ = 870 nm ISC typ. 16 µA Rise time VR = 5 V; RL = 50 Ω; λ = 850 nm tr typ. 0.02 µs Fall time VR = 5 V; RL = 50 Ω; λ = 850 nm tf typ. 0.02 µs Forward voltage IF = 100 mA; E = 0 VF typ. 1.3 V Capacitance VR = 0 V; f = 1 MHz; E = 0 C0 typ. 48 pF Temperature coefficient of voltage TCV typ. -2.6 mV / K Temperature coefficient of short-circuit current λ = 870 nm TCI typ. 0.03 % / K Noise equivalent power VR = 10 V; λ = 870 nm NEP typ. 0.040 pW / Hz1/2 Detection limit VR = 5 V; λ = 870 nm D* typ. 5.5e12 cm x Hz1/2 / W

6 | Version 1.6 | 2024-12-17 Relative Spectral Sensitivity 2), 3) Srel = f (λ) λ OHF01430 400 relS 0 600 800 1000 nm 1200 100 Directional Characteristics 2), 3) Srel = f (φ) OHF01402 40 30 20 10 20 40 60 80 100 1200.40.60.81.0 ϕ 0.2 0.4 0.6 0.8 1.0 100

7 | Version 1.6 | 2024-12-17 Photocurrent/Open-Circuit Voltage 2), 3) IP (VR = 5 V) / VO = f (Ee) E OHF01056 e 010 P/g44 -110 10 1 10 2 10 4 10 0 10 1 10 2 10 34 10 310 210 110 10 0 VO /g80Am V /g44P VO 2W/cm/g80 Dark Current 2), 3) IR = f (VR); E = 0 OHF00080 ΙR RV 0 5 10 15 V 20 1000 2000 3000 4000 pA Dark Current 2), 3) IR = f (VR); E = 0 OHF02284 VR ΙR 10-1 100 101 102 nA 2 4 6 8 10 12 14 16 V 20

8 | Version 1.6 | 2024-12-17 Capacitance 2), 3) C = f (VR); f = 1MHz; E = 0; TA = 25°C V OHF01778 R -210 C 10 -1 10 0 10 1 10 2V pF Dark Current 2) IR = f (TA); E = 0; VR = 10 V OHF05717 AT 10-1 ˚C02 04 06 08 0 100 RI nA 100 101 102 103 104

9 | Version 1.6 | 2024-12-17 Dimensional Drawing 4) Further Information: Approximate Weight: 44.0 mg Package marking: Cathode

10 | Version 1.6 | 2024-12-17 Recommended Solder Pad 4)

11 | Version 1.6 | 2024-12-17 Reflow Soldering Profile Product complies to MSL Level 4 acc. to JEDEC J-STD-020E 00 s OHA04525 100 150 200 250 300 50 100 150 200 250 300 t T St t Pt Tp240 ˚C 217 ˚C 245 ˚C 25 ˚C L Profile Feature Symbol Pb-Free (SnAgCu) Assembly Unit Minimum Recommendation Maximum Ramp-up rate to preheat*) 25 °C to 150 °C 2 3 K/s Time tS TSmin to TSmax tS 60 100 120 s Ramp-up rate to peak*) TSmax to TP 2 3 K/s Liquidus temperature TL 217 °C Time above liquidus temperature tL 80 100 s Peak temperature TP 245 260 °C Time within 5 °C of the specified peak temperature TP - 5 K tP 10 20 30 s Ramp-down rate* TP to 100 °C 3 6 K/s Time 25 °C to TP 480 s All temperatures refer to the center of the package, measured on the top of the component * slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

12 | Version 1.6 | 2024-12-17 Taping 4) OHAY2287 1.5 (0.059) 4 (0.157) 0.8 (0.031) 2 (0.079) 4.1 (0.161) 1.75 (0.069) 5.5 (0.217) 12 (0.472) 6.9 (0.272) Cathode/Collector Side

13 | Version 1.6 | 2024-12-17 Tape and Reel 5) Reel Dimensions A W Nmin W1 W2 max Pieces per PU 180 mm 12 + 0.3 / - 0.1 mm 60 mm 12.4 + 2 mm 18.4 mm 1500

14 | Version 1.6 | 2024-12-17 Barcode-Product-Label (BPL) Dry Packing Process and Materials 4) OHA00539 OSRAM Moisture-sensitive label or print Barcode label Desiccant Humidity indicator Barcode label OSRAM Please check the HIC immidiately after bag opening. Discard if circles overrun. Avoid metal contact. WET Do not eat. Comparator check dot parts still adequately dry. examine units, if necessary examine units, if necessary 15% 10%bake units bake units If wet, change desiccant If wet, Humidity Indicator MIL-I-8835 If wet, M oisture Level 3 Floor tim e 168 Hours M oisture Level 6 Floor tim e 6 Hours a) Hum idity Indicator Card is > 10% when read at 23 ˚C ± 5 ˚C, or reflow, vapor-phase reflow, or equivalent processing (peak package 2. After this bag is opened, devices that will be subjected to infrared 1. Shelf life in sealed bag: 24 m onths at < 40 ˚C and < 90% relative hum idity (RH). M oisture Level 5a at factory conditions of (if blank, seal date is identical with date code). a) M ounted within b) Stored at body tem 3. Devices require baking, before m ounting, if: Bag seal date M oisture Level 1 M oisture Level 2 M oisture Level 2a4. If baking is required, b) 2a or 2b is not m et. Date and tim e opened: reference IPC/JEDEC J-STD-033 for bake procedure. Floor tim e see below If blank, see bar code label Floor tim e > 1 Year Floor tim e 1 Year Floor tim e 4 W eeks10% RH. M oisture Level 4 M oisture Level 5 ˚C). OPTO SEMICONDUCTORS MOISTURE SENSITIVE This bag contains CAUTION Floor tim e 72 Hours Floor tim e 48 Hours Floor tim e 24 Hours 30 ˚C/60% RH. LEVEL If blank, see bar code label Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card according JEDEC-STD-033.

15 | Version 1.6 | 2024-12-17 Notes Subcomponents of this device contain, in addition to other substances, metal filled materials including silver. Metal filled materials can be affected by environments that contain traces of aggressive substances. There- fore, we recommend that customers minimize device exposure to aggressive substances during storage, production, and use. Devices that showed visible discoloration when tested using the described tests above did show no performance deviations within failure limits during the stated test duration. Respective failure limits are described in the IEC60810. For further application related information please visit https://ams-osram.com/support/application-notes

16 | Version 1.6 | 2024-12-17 Disclaimer Attention please! The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version on our website. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Product and functional safety devices/applications or medical devices/applications Our components are not developed, constructed or tested for the application as safety relevant component or for the application in medical devices. Our products are not qualified at module and system level for such application. In case buyer – or customer supplied by buyer – considers using our components in product safety devices/ applications or medical devices/applications, buyer and/or customer has to inform our local sales partner immediately and we and buyer and /or customer will analyze and coordinate the customer-specific request between us and buyer and/or customer.

17 | Version 1.6 | 2024-12-17 Glossary 1) Photocurrent: The photocurrent values are measured (by irradiating the devices with a homogenous light source and applying a voltage to the device) with a tolerance of ±11 %. 2) Typical Values: Due to the special conditions of the manufacturing processes of semiconductor devic- es, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could dif- fer from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice. 3) Testing temperature: TA = 25°C (unless otherwise specified) 4) Tolerance of Measure: Unless otherwise noted in drawing, tolerances are specified with ±0.1 and dimensions are specified in mm. 5) Tape and Reel: All dimensions and tolerances are specified acc. IEC 60286-3 and specified in mm.

18 | Version 1.6 | 2024-12-17

Revision History

1.5 2021-05-25 Schematic Transportation Box Dimensions of Transportation Box 1.6 2024-12-17 Dimensional Drawing

19 | Version 1.6 | 2024-12-17 Published by ams-OSRAM AG Tobelbader Strasse 30, 8141 Premstaetten, Austria Phone +43 3136 500-0 ams-osram.com © All rights reserved