SFH4650 OSRAM | Alldatasheet

Document overview

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Technical content

Features

  • High Power (40mW) Infrared LED
  • Peak wavelength typ. 850nm
  • Narrow halfangle ( 20°)
  • low profile component
  • Usable as top-looking and side-looking device
  • SFH 4650: Taping as Toplooker SFH 4655: Taping as Sidelooker

Applications

  • Infrared Illumination for CMOS cameras
  • IR Data Transmission
  • Automotive sensors
  • Remote controls Safety Advices Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 “Safety of laser products”.

Vorläufige Daten / Preliminary DataSFH 4650, SFH 4655 Grenzwerte (TA = 25 Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg – 40 + 100 C Sperrspannung Reverse voltage VR 5 V Durchlassstrom Forward current IF 100 mA Stoßstrom, s, D = 0 Surge current IFSM 1 A Verlustleistung Power dissipation Ptot 180 mW Wärmewiderstand Sperrschicht1) Thermal resistance junction RthJA 340 K/W Wärmewiderstand Sperrschicht2) Thermal resistance junction RthJS 180 K/W 1)Umgebung bei Montage auf FR4 Platine, Padgröße je 16 mm2 ambient mounted on PC-board (FR4), padsize 16 mm2 each 2)Lötstelle bei Montage auf Metall-Block soldering point, mounted on metal block Kennwerte (TA = 25 Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA peak 850 nm Spektrale Bandbreite bei 50% von Imax Spectral bandwidth at 50% of Imax IF = 100 mA 35 nm Abstrahlwinkel Half angle

20 Grad

deg. ATTENTION - Observe Precautions For Handling - Electrostatic Sensitive Device

Vorläufige Daten / Preliminary DataSFH 4650, SFH 4655 2005-03-083 Aktive Chipfläche Active chip area A 0.09 mm2 Abmessungen der aktiven Chipfl äche Dimension of the active chip area L B L W 0.3 0.3 mm Schaltzeiten, Ie von 10% auf 90% und von 90% auf 10%, bei IF = 100 mA, RL = 50 Switching times, e from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 tr, tf 12 ns Durchlassspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs VF VF 1.5 ( 1.8) 2.4 (< 3.0) V V Sperrstrom Reverse current VR = 3 V IR 0.01 ( 10) A Gesamtstrahlungsfluss Total radiant flux IF = 100 mA, tp = 20 ms e 40 mW Temperaturkoeffizient von Ie bzw. IF = 100 mA Temperature coefficient of Ie or e, IF = 100 mA TCI – 0.5 %/K Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA TCV – 0.7 mV/K Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA TC + 0.2 nm/K Kennwerte (TA = 25 Characteristics (cont’d) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit

Vorläufige Daten / Preliminary DataSFH 4650, SFH 4655 Strahlstärke Ie in Achsrichtung1) gemessen bei einem Raumwinkel = 0.01 sr Radiant Intensity Ie in Axial Direction at a solid angle of = 0.01 sr Bezeichnung Parameter Symbol Werte Values Einheit Unit -S -T -U Strahlstärke Radiant intensity IF = 100 mA, tp = 20 ms Ie min Ie max mW/sr mW/sr Strahlstärke Radiant intensity IF = 1 A, tp = 100 s Ie typ 200 250 300 mW/sr 1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 2:1) 1) Only one group in one packing unit, (variation lower 2:1)

Vorläufige Daten / Preliminary DataSFH 4650, SFH 4655 2005-03-085 Relative Spectral Emission Irel = f ( Max. Permissible Forward Current IF = f (TA); RthJA = 450 K/W1) Radiation Characteristics Irel = f ( 700 nm OHL01714 100 950750800850 Irel 402000 1008060 T IF mA OHF02533 A 110 OHF02432 0.40.60.81.0 0.2 0.4 0.6 0.8 1.0 Radiant Intensity Single pulse, tp = 20 s Permissible Pulse Handling Capability IF = f (tp), TA = 25 C duty cycle D = parameter Ie Ie 100mA = f (IF) OHL01715 mA 010 e e (100 mA) I I I F 010 110 210 31055 0.05 210-1-2-3-4-5 101010 1010 tp 1010 s10 0.1 0.005 0.02 0.01 D = T tA IF D = IP T F P t OHF02532 0.2 0.5 0.2 0.4 0.6 0.8 1.0 1.2 Forward Current IF = f (VF) Single pulse, tp = 20 s 1) mounted on PC board FR 4 (pad size 16 mm 2) OHL01713 FI 10-4 0.511.52 2.5 V3 100 A FV -110 10-2

Vorläufige Daten / Preliminary DataSFH 4650, SFH 4655 Maßzeichnung Package Outlines Maße werden in mm angegeben. Dimensions are specified in mm. Gehäuse package MID mit klarem Silikonverguss MID casted with clear Silicone Anschlussbelegung Pin configuration Pad 1 = Anode/ anode Pad 2 = Kathode / cathode OHF02423 (1.2) Isolating area metallisation Pad 2Pad 1 metallisation (0.8) 1.7 1.5 0.65 0.45 0.65 0.45 3.3 2.9 metallisation Backside Silicone area 1) Device casted with silicone.1) Avoid mechanical stress on silicone surface.

Vorläufige Daten / Preliminary DataSFH 4650, SFH 4655 2005-03-087 Empfohlenes Lötpaddesign Recommended Solderpad Design Bauteil positioniert Component location on pad 1.7 OHF02421 Solder resist Paddesign for improved heat dissipation Cu-area OHF02422 2.4 heat dissipation Solder resist Paddesign for improved Cu-area Component location on pad Bauteil positioniert

Vorläufige Daten / Preliminary DataSFH 4650, SFH 4655 Lötbedingungen Vorbehandlung nach JEDEC Level 2 Soldering Conditions Preconditioning acc. to JEDEC Level 2 IR-Reflow Lötprofil für bleifreies Löten (nach J-STD-020B) IR Reflow Soldering Profile for lead free soldering (acc. to J-STD-020B) Verarbeitungshinweis:Das Geh äuse ist mit Silikon vergossen. Mechanischer Stre ß auf der Bauteiloberfläche sollte so gering wie m öglich gehalten werden. Handling indication:The package is casted with silicone. Mechanical stress at the surface of the unit should be as low as possible. Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com © All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. OHLA0687 T t s 120 s max 100 150 200 250 300 Ramp Up 100 s max 50 100 150 200 250 300 Ramp Down

6 K/s (max)

3 K/s (max)

Recommended Solder Profile Minimum Solder Profile 10 s min min. condition for IR Reflow Soldering: solder point temperature 235 °C for at least 10 sec.