BD287 SIEMENS | Alldatasheet
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25C D M@@ 4235605 0004342 7 MMSIEG .. Tr33-097 PNP Silicon Planar Transistors “BD 287 A ~-- BpD288 __BD 488 i SIEMENS AKTIENGESELLSCHAF 04342 i BD 287 and BD 288 are epitaxial planar transistors in TO 126 plastic package (12 A 3 ' DIN 41869, sheet 4). The collector is electrically connected to the metallic mounting area. : The transistors are particularly designed for switching applications in flash devices. : nin. rl : 0805 ~*| = 4. . i iH rt Type Ordering code é His) z . BD 287 062702-D900 —— 8 j BD 288 62702-0901 my t Spring washer 162. 10,7202 i A3 DIN 137 062902-863 3 Mica washer | Q62902-B62 Rf : nbn a Approx. weight 0.5 g Dimensions in mm j Transistor fixing with M3 screw. Starting torque : max. 0.8 Nm. Washer or spring washer should Maximum ratings (Tam = 25°C) BD287__| BD 288 Collector-emitter voltage ~Voeq | 25 45 v Collector-emitter voltage -Vees_| 30 45 v Collector-base voltage -Veso | 30 45 v Emitter-base voltage ~Veso | & 5 v Collector current -Ig 12 12 A - Collector peak current (t s 10 ms) =lem | 18 16 A . Emitter peak current Tew 15 15 A Base current lp [2 2 A . Base peak current —leu 6 5 A . Junction temperature Tj 150 150 °c 5 Storage temperature range Teg 60 to +150 °C Total power dissipation (Teas = 25°C) Pot | 36 | 36 w Thermal resistance Junction to ambient air Rina | $100 | $100 | Kw Junetion to mounting area Rinse | 33,5 53,5 Kw 388 1765 G-10 -
25C D me 8235405 0004343 9 emSIEG | 7G B-/F c2e utes ~—O BD 287 \\ SIEMENS AKTIENGESELLSCHAF BD 288 ‘ TEMENS AKTIENGEEE>eeeeere Ci : Static characteristics (Temp = 25°C) BD 287 BD 288 | Collector cutoff current ' (-Vce = 30 V) ~Iees a1 a1 HA H Collector cutoff current ! (Vee = 30 V; Tam = 125°C) “Ices | $100 $100 HA { : DC current gain i DC current gain H (Fle = 0.1 A; Veg = 0.7 V) bee 200 200 - : Base-emitter forward voltage j (Hg = 12 A; -Veg = 0.7 V) Vee <7 <17 v : Base-emitter forward voltage i (-Ig = 0.1 A; —Vee = 0.7 V) Vee <08 <08 v 3 Dynamic characteristics (Tamb = 25°C) : Transition frequency . (“Veg = 10 V; Ie = 0.2 A) fr 250 250 MHz ‘ Collector-base capacitance i (Vea = 10) Cos 130 130 pF 4 ‘Switching times j (HI = 2A; Ig1 approx. Ig2 approx.0.2A) ton <0.5 <05 us ‘ tott <2 <2 us : .: - se os 389 “1766 G-1L . on
25C D Mm 8235605 OOONR4Y O MMSIEG 7-ISTP . “= gou u4s44e =D 1 i . : BD 287 : _SIEMENS AKTIENGESELLSCHAF ___—s—Ss*BD 28 Total perm. power dissipation { Paver | 8 eee { CePrry rrr yr rr ey i Pa COIN TET TTT H CPP NTP rrr i ao PAE : PCOS ET rey i COP N CEPT rN TT rt COPPA i aH Ne : CEPT . CEPT rrr Perry . PTT NT. ; CEPPPr rye NTT . : wo CLEC EEC : CEPT rin et : CPT Try ry i PPT T Tyrer Tra : CEPT Try rrr ry oC TTT rrr rrr iN ‘ 0 50 00 150°C q DC current gain hee =f (Ic) nA Collector cutoff current versus : Ce ene ee sameeren aoe ener ee eee ees : ne PRR PERT he ves FREEEEEEE RAH CO On . { a { @ CO EL |e ICT | BEERS eee See Seer Sea eat eLetter HHH E HHH Sas gaeEaeszSe=s| et A FREER E Perea H i j COO QE ol 22527 5222-2: ESSE EHH EE aoa Ene rer Ct oany aeeresoaee! EACH Con Cn egeseccesseaeee an ew! @ UA Tt @ CCEEEEEEEELEE 0? ‘ot 10° 1" 102A 0 50 100 150°C. ek —* Tan 390 _ ; . 176? G-12
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