BBY55-03W SIEMENS | Alldatasheet
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Technical content
Semiconductor Group Apr-30-19981 Silicon Tuning Diode Preliminary data
- Excellent linearity
- High Q hyperabrupt tuning diode
- Low series inductance
- Designed for low tuning voltage operation for VCO's in mobile communications equipment
- Very low capacitance spread VPS051761 Type Marking Ordering Code Pin Configuration Package BBY 55-03W 7 white Q62702-B0911 1 = C 2 = A SOD-323 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 16 V Forward current IF 20 mA Operating temperature range Top -55 ...+150 °C Storage temperature Tstg -55 ...+150 Semiconductor Group 1 1998-11-01
Semiconductor Group Apr-30-19982 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol UnitValues min. max.typ. DC characteristics IR - -Reverse current VR = 15 V 3 nA IR - - 100Reverse current VR = 15 V, TA = 65 °C AC characteristics Diode capacitance VR = 2 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz 5.5 C T 6.5 pF 2 -Capacitance ratio VR = 2 V, VR = 10 V, f = 1 MHz C T2/C T10 2.5 3 -rs 0.35 W0.15Series resistance VR = 5 V, f = 470 MHz - 0.09 -C CCase capacitance f = 1 MHz pF - 0.6Series inductance Ls - nH Semiconductor Group 2 1998-11-01
Semiconductor Group Apr-30-19983 Diode capacitance C T = f (V R) f = 1MHz 0 2 4 6 8 10 12 V 15 VR pF CT Semiconductor Group 3 1998-11-01