BB664 SIEMENS | Alldatasheet
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Technical content
Semiconductor Group Jul-10-19981 Silicon Variable Capacitance Diode Preliminary data
- For VHF TV-tuners
- High capacitance ratio
- Low series inductance
- Low series resistance
- Extremely small plastic SMD package
- Excellent uniformity and matching due to "in-line" matching assembly procedure
1 VES05991
Type Marking Ordering Code PackagePin Configuration Q62702- B0909 (unmatched) Q62702- B0908 (in-lined matched) 1=C 2=A SCD-80BB 664 BB 664 Maximum Ratings Parameter Symbol UnitValue Diode reverse voltage VR 30 V Peak reverse voltage (R ‡ 5kW ) VRM 35 Forward current IF 20 mA Semiconductor Group 1 1998-11-01
Semiconductor Group Jul-10-19982 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Reverse current VR = 30 V IR - - 10 nA Reverse current VR = 30 V, TA = 85 °C IR - - 100 AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz C T 29.4 2.5 2.4 41.8 31.85 2.7 2.55 44.5 34.2 2.85 2.75 pF Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz C T2/C T25 11 11.8 12.5 - Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz C T1/C T28 15.2 16.4 17.5 Capacitance ratio 1) VR = 1 V, VR = 28 V, f = 1 MHz DC T/C T - - 2 % Series resistance VR = 5 V, f = 470 MHz rs - 0.6 0.75 W Series inductance Ls - 0.6 - nH 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group 2 1998-11-01
Semiconductor Group Jul-10-19983 Diode capacitance C T = f (V R) f = 1MHz 0 2 4 6 8 10 12 14 16 18 20 22 24 26 V 30 VR pF C T 0 2 4 6 8 10 12 14 16 18 20 22 24 26 V 30 VR pF C T Semiconductor Group 3 1998-11-01