BB555 SIEMENS | Alldatasheet

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Technical content

Semiconductor Group Jul-28-19981 Silicon Tuning Diode

  • For UHF-TV-tuners
  • High capacitance ratio
  • Low series inductance
  • Low series resistance
  • Extremely small plastic SMD package
  • Excellent uniformity and matching due to "in-line" matching assembly procedure

1 VES05991

Type Marking Ordering Code Pin ConfigurationPackage BB 555 BB 555 B B Q62702-B0864 unmatched Q62702-B0853 inline matched 1 = C 2 = A SCD-80 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 30 V Peak reverse voltage (R ‡ 5kW ) VRM 35 Forward current IF 20 mA Operating temperature range Top 55 ...+150 °C Storage temperature Tstg 55 ...+150 Semiconductor Group 1 1998-11-01

Semiconductor Group Jul-28-19982 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Reverse current VR = 30 V IR - - 10 nA Reverse current VR = 30 V, TA = 85 °C IR - - 200 AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz C T 17.5 14.1 2.05 1.9 18.7 2.24 2.1 16.1 2.4 2.3 pF Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz C T2/C T25 6 6.7 7.5 - Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz C T1/C T28 8.2 8.9 9.8 Capacitance matching 1) VR = 1V to 28V , f = 1 MHz, 4 diodes sequence VR = 1V to 28V , f = 1 MHz, 7 diodes sequence DC T/C T 0.15 0.25 Series resistance VR = 3 V, f = 470 MHz rs - 0.58 - W Series inductance Ls - 0.6 - nH 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group 2 1998-11-01

Semiconductor Group Jul-28-19983 Diode capacitance C T = f (V R) f = 1MHz 0 5 10 15 20 V 30 VR pF C T Temperature coefficient of the diode capacitance TCc = f (VR ) 10 0 10 1 10 2 V VR -5 10 -4 10 -3 10 1/°C TCc Reverse current IR = f (TA ) VR = 28V -30 -10 10 30 50 70 °C 100 TA 0 10 1 10 2 10 3 10 pA IR Reverse current IR = f (VR ) TA = Parameter 10 0 10 1 10 2 V VR -1 10 0 10 1 10 2 10 3 10 pA IR 25°C 85°C Semiconductor Group 3 1998-11-01

Semiconductor Group Jul-28-19984 Normalized diode capacitance C (TA) / C (25°C)= f (TA) f = 1MHz, VR = Parameter -30 -10 10 30 50 70 °C 110 TA 0.96 0.98 1.00 1.02 1.06 C TA / C 25 25V Semiconductor Group 4 1998-11-01