BBY53-03W SIEMENS | Alldatasheet
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Technical content
Semiconductor Group 1 Sep-11-1996 BBY 53-03W Silicon Tuning Diode Preliminary data
- High Q hyperabrupt tuning diode
- Designed for low tuning voltage operation for VCO's in mobile communications equipment
- High ratio at low reverse voltage Type Marking Ordering Code Pin Configuration Package BBY 53-03W white/5 Q62702-B0825 1 = C 2 = A SOD-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 6 V Forward current IF 20 mA Operating temperature range Top - 55 ... + 150 °C Storage temperature Tstg - 55 ... + 150
Semiconductor Group 2 Sep-11-1996 BBY 53-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC characteristics Reverse current VR = 4 V, TA = 25 °C VR = 4 V, TA = 65 °C IR 200 nA AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz C T 1.85 4.8 2.4 5.3 3.1 5.8 pF Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz C T1/C T3 1.8 2.2 2.6 Series resistance VR = 1 V, f = 1 GHz rs - 0.37 - Ω Case capacitance f = 1 MHz C C - 0.12 - pF Series inductance chip to ground Ls - 2 - nH
Semiconductor Group 3 Sep-11-1996 BBY 53-03W Diode capacitance C T = f (VR ) f = 1MHz V R pF C T Package