BAV199 SIEMENS | Alldatasheet

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Silicon Low Leakage Diode Array BAV 199 Maximum Ratings per Diode Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration BAV 199 Q62702-A921JYs SOT-23 Parameter Symbol Values Unit Reverse voltage VR 70 V Forward current IF 200 mA Junction temperature Tj 150 ˚C Total power dissipation,TS =3 1˚ C Ptot 330 mW Storage temperature range Tstg – 65 … + 150 Peak reverse voltage VRM 70 Surge forward current,t = 1µs IFS 4.5 A Thermal Resistance Junction - ambient2) Rth JA ≤ 500 K/W Junction - soldering point Rth JS ≤ 360 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.

  • Low-leakage applications
  • Medium speed switching times
  • Connected in series 5.91

Electrical Characteristics per Diode atTA = 25 ˚C, unless otherwise specified. Test circuit for reverse recovery time Pulse generator:tp = 5µs,D = 0.05 Oscillograph: R = 50Ω tr = 0.6 ns,Rj = 50Ω tr = 0.35 ns C ≤ 1p F UnitValuesParameter Symbol min. typ. max. DC characteristics VBreakdown voltage I(BR) = 100µA V(BR) 70 – – nAReverse current VR = 70 V VR = 70 V,TA = 150 ˚C IR AC characteristics µsReverse recovery time IF = 10 mA,IR = 10 mA,RL = 100Ω measured atIR = 1 mA trr – 0.5 3 mVForward voltage IF = 1 m A IF = 10 mA IF = 50 mA IF = 150 mA VF 900 1000 1100 1250 pFDiode capacitance VR = 0 V,f = 1 MHz C D –2–

Forward currentIF = f(TA*;TS) * Package mounted on epoxy Forward currentIF = f(VF) TA = 25 ˚C Reverse currentIR =f(TA) Peak forward currentIFM = f(t)

Forward voltageVF = f(TA)