SMBTA56M SIEMENS | Alldatasheet

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Technical content

Semiconductor Group Au -11-19981 PNP Silicon AF Transistor

  • High breakdown voltage
  • Low collector-emitter saturation voltage
  • Complementary type: SMBTA 06M (NPN) VPW05980 Type Marking Ordering Code Pin Configuration Package 4 n.c.5 = CSMBTA 56M Q62702-A3474 1 = B 2 = C 3 = E SCT-595s2G Maximum Ratings Parameter Symbol UnitValue Collector-emitter voltage 80 VVCEO VCBO 80Collector-base voltage 4Emitter-base voltage VEBO DC collector current IC 500 mA Peak collector current ICM 1 A IB 100Base current mA Peak base current IBM 200 Ptot 1 WTotal power dissipation, TS £ 95 °C °C150Junction temperature Tj Storage temperature Tstg - 65...+150 Thermal Resistance Junction ambient 1) R thJA £110 K/W Junction - soldering point R thJS £55 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 1998-11-01

Semiconductor Group Au -11-19982 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter ValuesSymbol Unit typ. max.min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 80V(BR)CEO -- V Collector-base breakdown voltage IC = 100 µA, IB = 0 - -80V(BR)CBO V(BR)EBO 4 --Emitter-base breakdown voltage IE = 10 µA, IC = 0 V Collector cutoff current VCB = 80 V, IE = 0 ICBO - - 100 nA ICBO 20Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 °C µA-- Collector cutoff current VCE = 60 V, IB = 0 - nA100-ICEO DC current gain 1) IC = 10 mA, VCE = 1 V IC = 100 mA, V CE = 1 V hFE 100 100 VCEsat - VCollector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA 0.25- - 1.2Base-emitter voltage 1) IC = 100 mA, V CE = 1 V VBE(ON) - V AC Characteristics - 150 -Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz fT MHz -Collector-base capacitance VCB = 10 V, f = 1 MHz 5 - pFC cb 1) Pulse test: t < 300ms; D < 2% Semiconductor Group 2 1998-11-01

Semiconductor Group Au -11-19983 Total power dissipation P tot = f (TA*;TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA,TS 200 400 600 800 mW 1200 P tot TS 0 20 40 60 80 100 120 °C 150 TA,TS 200 400 600 800 mW 1200 P tot TA 0 20 40 60 80 100 120 °C 150 TA,TS 200 400 600 800 mW 1200 P tot Permissible Pulse Load R thJS = f (tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -1 10 0 10 1 10 2 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 Ptotmax / PtotDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Semiconductor Group 3 1998-11-01

Semiconductor Group Au -11-19984 DC current gain hFE = f(IC) VCE = 1V EHP00852 h C FE 101 10-1 0 I 100 C 25 C -50 C 110 210 310mA 210 310 010 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 0.010 EHP00850 CEsatV 310 IC mA 110 210 C 100 25 C -50C 0.5 V 1.0 Collector cutoff current ICBO = f(TA) VCB = 20V EHP00851 0 C A 150 nA CBO 10-1 50 100 102 100 I T max typ 103 Collector current IC = f (VBE ) VCE = 1V EHP00846 0 V BE 1.5 C 10-1 0.5 1.0 100 I V mA 102 100 C 25 C -50 C Semiconductor Group 4 1998-11-01