BAT68-07W SIEMENS | Alldatasheet

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Semiconductor Group Sep-09-19981 Silicon Schottky Diodes

  • For mixer applications in the VHF / UHF range
  • For high-speed switching applications VPS05605 ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BAT 68-07W 87 Q62702-A1200 1 = C1 2 = C2 SOT-3433 = A2 4 = A1 Maximum Ratings Parameter Symbol Value Unit Diode reverse voltage VR 8 V Forward current IF 130 mA Total power dissipation, TS = 89 °C Ptot 150 mW Junction temperature Tj 150 °C Operating temperature range °C-65...+150Top Storage temperature Tstg - 65 ...+150 °C Maximum Ratings Junction - ambient 1) RthJA £ 570 K/W Junction - soldering point RthJS £ 410 1) Package mounted on alumina 15mm x 17.6mm x 0.7mm Semiconductor Group 1 1998-11-01

Semiconductor Group Sep-09-19982 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter ValuesSymbol Unit max.min. typ. DC characteristics V(BR) 8Breakdown voltage I(BR) = 10 µA -- V IR µA-Reverse current VR = 1 V 0.1- Reverse current VR = 1 V, TA = 60 °C IR - - 1.2 nA Forward voltage IF = 1 mA IF = 10 mA VF 340 318 390 340 500 mV AC characteristics Diode capacitance VR = 1 V, f = 1 MHz C T - - 1 pF Differential forward resistance IF = 5 mA, f = 10 kHz rf - - 10 W Semiconductor Group 2 1998-11-01

Semiconductor Group Sep-09-19983 Forward current IF = f (TA*;TS) * Package mounted on alumina 0 20 40 60 80 100 120 °C 150 TA,TS 100 110 120 mA 140 IF TS TA Permissible Pulse Load R thJS = f(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 3 10 K/W R thJS 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0 Permissible Pulse Load IFmax / IFDC = f(tp) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp 0 10 1 10 2 10 IFmax / IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Semiconductor Group 3 1998-11-01

Semiconductor Group Sep-09-19984 Forward current IF = f (V F) TA = Parameter 0.010 EHD07101BAT 68... IF FV -40 C A = mA C25 C85 C150 T Reverse current IR = f (VR ) TA = Parameter 010 EHD07102BAT 68... IR RV A

150 CTA =

m 110 C85 C25 Differential forward resistance rf = f (IF) f = 10 kHz EHD07104BAT 68... r I f -1 010 110 mA W F 010 110 210 310 Diode capacitance C T = f (V R) f = 1MHz EHD07103BAT 68... C T RV 234 0.5 pF 1.0 Semiconductor Group 4 1998-11-01

Semiconductor Group Sep-09-19985 Rectifier voltage Vout = f (Vin) f = 900 MHz R L = parameter in kW 10 0 10 1 10 2 10 3 mV VI -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 mV V O 1000 500 200 100 R L=10 Testcircuit: D.U.T R IN R LC L 1nF50W V I V 0 Semiconductor Group 5 1998-11-01