BAV70S SIEMENS | Alldatasheet
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Semiconductor Group 1 Nov-28-1996 BAV 70S Silicon Switching Diode Array
- For high speed switching applications
- Common cathode
- Internal (galvanic) isolated Diodes Arrays in one package Type Marking Ordering Code Pin Configuration Package BAV 70S A4s Q62702-A1097 1/4=A1 2/5=A2 3/6=C1/2 SOT-363 Maximum Ratings per Diode Parameter Symbol Values Unit Diode reverse voltage VR 70 V Peak reverse voltage VRM 70 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total Power dissipation TS = 85 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction ambient 1) R thJA ≤ 530 K/W Junction - soldering point R thJS ≤ 260 1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Semiconductor Group 2 Nov-28-1996 BAV 70S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC characteristics per Diode Breakdown voltage I(BR) = 100 µA V(BR) 70 - - V Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VF 1250 1000 855 715 mV Reverse current VR = 70 V, TA = 25 °C VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C IR 2.5 µA AC characteristics per Diode Diode capacitance VR = 0 V, f = 1 MHz C D - - 1.5 pF Reverse recovery time IF = 10 mA, IR = 10 mA, R L = 100 Ω trr measured at 1 mA trr - - 6 ns
Semiconductor Group 3 Nov-28-1996 BAV 70S Forward current IF = f (TA*;TS) * Package mounted on epoxy 0 20 40 60 80 100 120 °C 150 TA ,TS 100 150 200 mA 300 IF TS TA Forward current IF = f (VF) TA = 25°C Permissible Pulse Load R thJS = f(tp) s tp 0 10 1 10 2 10 3 10 K/W R thJS D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 Permissible Pulse Load IFmax /IFDC = f(tp) s tp 0 10 1 10 2 10 - IFmax /IFDC D = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
Semiconductor Group 4 Nov-28-1996 BAV 70S Forward voltage VF = f (TA) Reverse current IR = f (TA)