BAS170W SIEMENS | Alldatasheet
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Technical content
Semiconductor Group 1 Edition A01, 11.07.94 ESD : Electrostastic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 Package 1) BAS 170W 7 Q62702-A1072 A C SOD-323 Maximum Ratings Parameter Symbol BAS 170W Unit Reverse voltage VR 70 V Forward current IF 70 mA Surge forward current, t ≤ 10 ms IFSM 100 mA Total Power dissipation TS ≤ 97°C Ptot 250 mW Operating temperature range Top -55 +150°C °C Storage temperature range Tstg -55...+150°C °C Thermal Resistance Junction-ambient 1) R th JA ≤ 320 K/W Junction-soldering point R th JS ≤ 210 K/W 1) Package mounted on an epoxy pcb 40mm x 40mm x 1.5mm/1cm2 Cu Silicon Schottky Diode /G6c General-purpose diodes for high-speed switching /G6c Circuit protection /G6c Voltage clamping /G6c High-level detecting and mixing /G6c Small package SOD-323
Semiconductor Group 2 Edition A01, 11.07.94
Electrical Characteristics
at TA = 25 °C, unless otherwise specified. Parameter Symbol Value Unit min. typ. max. DC Characteristics Breakdown voltage I(BR) = 10 µA V(BR) 70 - - V Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA VF 300 600 750 375 705 880 410 750 1000 mV Reverse current VR = 50 V VR = 70 V IR 0.1 µA Diode capacitance VR = 0 V, f = 1 MHz C T - 1.5 2 pF Charge carrier life time IF = 25 mA I - - 100 ps Differential forward resistance IF = 10 mA, f = 10 kHz R F -3 4 - Ω Series inductance LS -2 - nH
Semiconductor Group 3 Edition A01, 11.07.94 Forward current IF = f (VF) Reverse current IR = f (VR ) Diode capacitance C T = f (VR ) Differential forward resistance R F = f (IF)
Semiconductor Group 4 Edition A01, 11.07.94 Forward current IF = f (TA *TS) * Package mounted on epoxy Permissible load R thJS = f (tp) mA TT AS IF T T A S R thJS tp K/W Permissible Pulse load IFmax / IFDC = f (tp) I tp Fmax IFDC