Q627002G0078

CGY81 SIEMENS | Alldatasheet

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Siemens Aktiengesellschaft 1 23.07.98 HL HF PE GaAs 1/Fo GaAs MMIC /c108 Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones /c108 31 dBm saturated output power @ PAE =55% typ. 29 dBm linear output power@ PAE =40% typ. /c108 Fully integrated 2 stage amplifier /c108 Power ramp control /c108 Input matched to 50 ohms, simple output match ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package CGY 81 CGY 81 Q627002G0078 MW 16 Maximum Ratings Characteristics Symbol max. Value Unit Positive supply voltage V D 9V Supply current ID 4A Channel temperature TCh 150 °C Storage temperature Tstg -55...+150 °C Pulse peak power dissipation PPulse tbd W Total power dissipation (Ts £ 80 °C) Ts: Temperature at soldering point Ptot Tbd W Thermal Resistance Characteristics Symbol max. Value Unit Channel-soldering point R thChS 11 K/W Semiconductor Group 1 1998-11-01

Siemens Aktiengesellschaft 2 23.07.98 HL HF PE GaAs 1/Fo Functional Block Diagram: Pin Configuration: Pin # Name Configuration

1 VD Cell Drain voltage preamplifier stage

2 n. c.

3 RF IN CellRF IN

4 n. c.

5 Vneg Negative voltage

6 Vcon Control voltage

7 n. c. 8 n. c. 9 n. c. 10 n. c.

11 RF out RF out / drain voltage final stage

12 RF out RF out / drain voltage final stage

13 RF out RF out / drain voltage final stage

14 RF out RF out / drain voltage final stage

15 n. c. 16 n. c. RF OUT VD1 RF IN Vcon Control Circuit Vneg Semiconductor Group 2 1998-11-01

Siemens Aktiengesellschaft 3 23.07.98 HL HF PE GaAs 1/Fo

Electrical Characteristics

(TA = 25°C , ZS=ZL=50 Ohm, VD=3.5V, Idq=300mA, unless otherwise specified ) Characteristics Symbol min typ max Unit Frequency range f 824 849 MHz Duty cycle tON /tOFF 100 % AMPS output power P 31,5 dBm TDMA output power P 30 dBm AMPS gain at max. output G 24 dB TDMA gain at max. output G 27 dB CDMA output power P 28 dBm CDMA gain at max. output G 28 dB Power ramping characteristic Full output power Pinch off V contr 2.5 0.5 V Adjacent Channel Power CDMA 900kHz offset

1.98 MHz offset

P adj/Pmain -45 -54 dBc @ 30kHz Adjacent channel power TDMA adjacent alternate 2nd alternate P adj/Pmain -28 –45 -45 dBc @ 30kHz AMPS efficiency PAE 55 % TDMA DC to RF efficiency @Padj=-26dBc at max. output PAE CDMA DC to RF efficiency @Padj=-42dBc at max. output at Pout=10 dBm ( Iq set to 100mA ) PAE Receive band noise power density ( 869 to 894 MHz ) PRX -137 dBm/Hz Drain supply voltage range VD 2.7 3.5 4.0 V Negative supply voltage range Vneg -5.0 -7 V Standby current @Vcon=0V I pwr dwn 500 mA Quiescent current I Q 300 mA Current consumption at VContr IControl 2m A Current consumption at VNEG INEG 2m A Operating temperature range u -30 +85 °C Semiconductor Group 3 1998-11-01

Siemens Aktiengesellschaft 4 23.07.98 HL HF PE GaAs 1/Fo Power on sequence: 1. connect negative voltage to PA 2. connect control voltage to PA 3. turn on Vd 4. turn on Pin To switch off the device please use reverse sequence. Application Circuit: Evaluation Board Parts List Part Type Position Description Manufacturer Part Number Capacitor C1 3.9pF 0402 Siemens Capacitor C2, C7, C10 100pF 0402 Siemens Capacitor C3, C4, C5, C6 1uF 1206 Siemens Capacitor C8 5.6pF 0603 HQ AVX 06035J5R6GBT Capacitor C9 10pF 0603 HQ AVX 06035J100GBT Capacitor C11, C12 10 nF 0402 Siemens Capacitor C13, C15 1 nF 0402 Siemens 10p HQ 5p6 HQ 1u0 C6C5 1u0 1u0 C4C3 1u0 8n2 33 nH 10 uH RFout CLK RFin BC848B BAS 40-04 CGY81 IC1

1 VD1

5 Vneg

14VD2/RFout4 13VD2/RFout3 12VD2/RFout26 Vcon

3 RFin

7 NC7

4 NC4

2 NC2

GND (backside MW16) 11VD2/RFout1 C16 33n Vaux Vcon Vd 3k9 680R C15 1n0 33n C14 C13 1n0 10n C12 C11 10n C10 100p 100p 100p 3p9 Semiconductor Group 4 1998-11-01

Siemens Aktiengesellschaft 5 23.07.98 HL HF PE GaAs 1/Fo Part Type Position Description Manufacturer Part Number Capacitor C14, C16 33nF 0402 Siemens Inductor L1 10uH Siemens Inductor L2 33nH Air Coil H. David GmbH PN/BV 1250 Inductor L3 8.2nH 0603 Resistor R1 3.9k 0402 Resistor R2 680 Ohm 0402 Diode V1 BAS40-04W Siemens Transistor V2 BC848B Siemens Substrate FR4, h=0.2mm, er=4.5 Siemens Evaluation Board: RFin Vd SIEMENS RFout CGY 81 Cell Band PA Vaux Vcon CLK RFout CLK RFin V2 V1 Semiconductor Group 5 1998-11-01

Siemens Aktiengesellschaft 6 23.07.98 HL HF PE GaAs 1/Fo Typical Performance in AMPS Operation Mode AMPS Mode: TG & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C - 1 5 - 1 3 - 1 1 - 9- 7- 5- 3- 1 1 3 5 7 Pin [dBm] TG [dB] 150 300 450 600 750 900 Id [mA] TG [dB] Id [mA] AMPS Mode: PAE & Pout vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C - 1 5 - 1 3 - 1 1 - 9- 7- 5- 3- 1 1 3 5 7 Pin [dBm] Pout [dBm] 0.00 10.00 20.00 30.00 40.00 50.00 60.00 70.00 PAE [%] Pout [dBm] PAE [%] AMPS Mode: Pout vs. Vd Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25°C 3 3.2 3.4 3.6 3.8 4 Vd [V] Pout [dBm] AMPS Mode: PAE vs. Vd Iq=300mA, f=836,5 MHz, Pin=8dBm, T=25°C 3 3.2 3.4 3.6 3.8 4 Vd [V] PAE [%] AMPS Mode: Pout vs. f Iq=300mA, Vd=3.5V, Pin=8dBm, T=25°C 31.2 31.4 31.6 31.8 32.2 32.4 32.6 32.8 820 825 830 835 840 845 850 f [MHz] Pout [dBm] AMPS Mode: PAE vs. f Iq=300mA, Vd=3.5V, Pin=8dBm, T=25°C 820 825 830 835 840 845 850 f [MHz] PAE [%] Semiconductor Group 6 1998-11-01

Siemens Aktiengesellschaft 7 23.07.98 HL HF PE GaAs 1/Fo Typical Performance in CDMA Operation Mode: CDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C - 1 5 - 1 3 - 1 1 - 9- 7- 5- 3- 1 1 3 Pin [dBm] Pout [dBm], PAE [%] 100 200 300 400 500 600 700 800 Id [mA]Pout [dBm] PAE [%] Id [mA] CDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C 14 16 18 20 22 24 26 28 30 Pout [dBm] ACPR [dBc] TG [dB]ACP885 [dBc] ACP1,98 [dBc] TG [dB] CDMA Mode: ACPR @885kHz Offset vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] ACPR [dBc] CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] ACPR [dBc] CDMA Mode: Gain vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] TG [dB] CDMA Mode: PAE vs. f Vd=3,0V, Pout=27,5dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] PAE [%] Semiconductor Group 7 1998-11-01

Siemens Aktiengesellschaft 8 23.07.98 HL HF PE GaAs 1/Fo CDMA Mode: ACPR @885kHz Offset vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] ACPR [dBc] CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] ACPR [dBc] CDMA Mode: Gain vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] TG [dB] CDMA Mode: PAE vs. f Vd=3,5V, Pout=28,5dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] PAE [%] CDMA Mode: ACPR @885kHz Offset vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] ACPR [dBc] CDMA Mode: ACPR @1,98MHz Offset vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] ACPR [dBc] Semiconductor Group 8 1998-11-01

Siemens Aktiengesellschaft 9 23.07.98 HL HF PE GaAs 1/Fo CDMA Mode: Gain vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] TG [dB] CDMA Mode: PAE vs. f Vd=4V, Pout=29,5dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] PAE [%] Typical Performance in TDMA Operation Mode TDMA Mode: Pout, PAE & Id vs. Pin Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C - 1 5 - 1 3 - 1 1 - 9- 7- 5- 3- 1 1 3 5 Pin [dBm] Pout [dBm], PAE [%] 100 200 300 400 500 600 700 800 900 Id [mA] Pout [dBm] PAE [%] Id [mA] TDMA Mode: ACPR & TG vs. Pout Vd=3,5V, Iq=300mA, f=836,5 MHz, T=25°C 14 16 18 20 22 24 26 28 30 Pout [dBm] ACPR [dBc] TG [dB] Padj [dBc] Palt [dBc] TG [dB] TDMA Mode: Padj vs. f Vd=3,0V, Pout=29dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] ACPR [dBc] TDMA Mode: Palt vs. f Vd=3,0V, Pout=29dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] ACPR [dBc] Semiconductor Group 9 1998-11-01

Siemens Aktiengesellschaft 10 23.07.98 HL HF PE GaAs 1/Fo TDMA Mode: Gain vs. f Vd=3V, Pout=29dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] TG [dB] TDMA Mode: PAE vs. f Vd=3V, Pout=29dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] PAE [%] TDMA Mode: Padj vs. f Vd=3,5V, Pout=30dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] ACPR [dBc] TDMA Mode: Palt vs. f Vd=3,5V, Pout=30dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] ACPR [dBc] TDMA Mode: Gain vs. f Vd=3,5V, Pout=30dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] TG [dB] TDMA Mode: PAE vs. f Vd=3,5V, Pout=30dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] PAE [%] Semiconductor Group 10 1998-11-01

Siemens Aktiengesellschaft 11 23.07.98 HL HF PE GaAs 1/Fo TDMA Mode: Padj vs. f Vd=4V, Pout=31dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] ACPR [dBc] TDMA Mode: Palt vs. f Vd=4V, Pout=31dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] ACPR [dBc] TDMA Mode: Gain vs. f Vd=4V, Pout=31dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] TG [dB] TDMA Mode: PAE vs. f Vd=4V, Pout=31dBm, Iq=300mA 820 825 830 835 840 845 850 f [MHz] PAE [%] Semiconductor Group 11 1998-11-01

Siemens Aktiengesellschaft 12 23.07.98 HL HF PE GaAs 1/Fo Published by Siemens AG, Bereich Bauelemente, Vertrieb, Produkt-Information, Balanstraße 73, D-81541 München copyright Siemens AG 1996. All Rights Reserved As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives world- wide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Semiconductor Group 12 1998-11-01