TP60P SIEMENS | Alldatasheet

Document overview

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Technical content

Features

  • Especially suitable for applications from 400 nm to 1120 nm
  • Cathode = back contact
  • Mounting by bolt/nut

Applications

  • For control and drive circuits
  • Light pulse scanning
  • Quantitative light measurements in the visible light and near infrared range Typ Type Bestellnummer Ordering Code TP 60 P Q62607-S60 Silizium-Fotoelement Silicon Photovoltaic Cell TP 60 P Ma βe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. fso06007 10.95

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Top;Tstg – 40 ... + 80 °C Sperrspannung Reverse voltage VR 1V Kennwerte (TA = 25°C, Normlicht A,T = 2856 K) Characteristics(TA = 25°C, standard light A,T = 2856 K) Bezeichnung Fotoempfindlichkeit,VR = 0 V Spectral sensitivity S 1 (≥ 0.7) µA/Ix Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity λS max 900 nm Spektraler Bereich der Fotoempfindlichkeit S = 10 % vonSmax Spectral range of sensitivity S = 10 % ofSmax λ 400 ... 1120 nm Bestrahlungsempfindliche Fläche Radiant sensitive area A 1.3 cm 2 Form der bestrahlungsempfindlichen Fläche Shape of radiant sensitive area Sechseck hexagon Halbwinkel Half angle ϕ± 60 Grad deg. Dunkelstrom,VR = 1 V;E = 0 Dark current IR 0.1 (≤ 2) µA Spektrale Fotoempfindlichkeit,λ = 850 nm Spectral sensitivity Sλ 0.55 A/W Quantenausbeute,λ = 850 nm Quantum yield η 0.80 Electrons Photon Leerlaufspannung, Open-circuit voltage Ev = 1000 Ix Ee = 0.5 mW/cm2;λ = 850 nm VO VO 450 (≥ 270) 430 mV

Kurzschluβstrom,Ev = 1000 Ix Short-circuit current Ev = 1000 Ix Ee = 0.5 mW/cm2;λ = 850 nm ISC ISC 1 (≥ 0.7) 380 mA µA Anstiegs und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL= 1 kΩ; VR = 1 V; λ = 850 nm;Ip = 50µA tr,tf 18 µs Temperaturkoeffizient vonVO Temperature coefficient ofVO TC V – 2.6 mV/K Temperaturkoeffizient von ISC Temperature coefficient ofISC TC I 0.12 % /K Kapazität, VR = 0 V,f= 1 MHz,Ev = 0 Ix Capacitance C 0 11 nF Kennwerte (TA = 25°C, Normlicht A,T = 2856 K) Characteristics(TA = 25°C, standard light A,T = 2856 K) Bezeichnung

Relative spectral sensitivity Srel= f (λ) Dark current IR = f (VR ),E = 0 Open-curcuit voltageVO = f (Ev ) Short-circuit currentISC = f (Ev ) Capacitance C = f (VR ),f = 1 MHz,E = 0 Directional characteristicsSrel= f (ϕ)