2N2906 SIEMENS | Alldatasheet

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25¢ D mM 4235605 0004899 1 MMSIEG | PNP Silicon Planar Transistors 2N 2906 -37- 2.N 2907 SIEMENS AKTIENGESELLSCHAF O7=37-/7 2 N29

2 N 2906 and 2 N 2907 are epitaxial PNP silicon planar transistors in TO 18 case (18 A 3

DIN 41876). The collector is electrically connected to the case. The transistors are particularly suitable for use as high-speed switches. EBS . Type Ordering code 2046 ; 3 2N 2906 Q62702-F137 ra 2N 2907 Q62702-S111 C. . 49541 taett Approx. weight 0.3 g Dimensions in mm 2N 2906 Maximum ratings 2N 2907 Collector-emitter voltage —Vecto 40 Vv Collector-base voltage —-Veso 60 Vv Emitter-base voltage -Veso 5 Vv Collector current -Ic 0.6 A Junction temperature y 200 °c Storage temperature range Tetg -65 to +200 °C Total power dissipation (Tam = 25°C) Prot 04 Ww Total power dissipation (Tease = 25°C) Prot 1.8 Ww Thermal resistance Junetion to ambient air Risa | <438 | Kw Junction to case Rinse <97 Kw

2261 A-02 ; 945

25C D m™ 8235605 OOO4I00 4 MESIEG SIEMENS AKTIENGESELLSCHAF ?~7-37—/7 2N 2906 2.N 2907 Static characteristics (Tamp = 25°C) 2N 2906 2N 2907 Collector-base breakdown voltage (Ig = 10 nA) —Viarjcao | > 60 >60 Vv Collector-emitter breakdown voltage . (-Ig = 10 mA) —Viarjceo | >40 >40 v : Emitter-base breakdown voltage (-le = 5V) —Viaryeso | >5 >5 Vv Collector-emitter saturation voltage (=/g = 15 mA; —I¢ = 150 mA) —Voesat <0.4 <04 Vv (-Ig = 50 mA; -Jc = 500 mA) —Veesat <1.6 <1.6 Vv Base-emitter saturation voltage (-Ic = 150 mA; Ig = 15 mA) —Veesat <13 <13 Vv {Ic = 500 mA; Ig = 50 mA) —Veesat <26 <2.6 Vv Collector cutoff current (“Vea = 50) -Ieao | <20 <20 nA (-Voeg = 50 V; Tamb = 150°C) ~Ico0 <20 <20 HA DC current gain (-Vce = 10 V; ~Ic = 100 pA) fee >20 >35 - (-Vee = 10 V; =Jg = 1 mA) ee >26 >50 - (“Veg = 10 V; ~I¢ = 10 mA) hee >35 >75 - (-Vce = 10 V; Ic = 150 mA) tee 40to120 | 100to300 | - (-Voe = 10V; ~Ig = 500 mA) he >20 >30 = Dynamic characteristics (Tamp = 25°C) Collector base capacitance (=Veg = 10 V; f = 100 kHz) Ccao <8 <8 pF Transition frequency (-Vog = 20 V; ~Ig = 50mA;f=100MHz) fr >200 >200 MHz Switching times: (“Voc = 30 V; =I = 150 mA; Igy approx. Ig2 approx. 15 mA) . Delay time ty <10 <10 ns Rise time t <40 <40 ns Storage time ty <80 <80 ns Fall time ty <30 <30 ns 248 2262 = A-03 a