BRY20 SIEMENS | Alldatasheet

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, ble i 25¢ D MM 6235605 O0047b3 9 MMSIEG © PNPNThyristorTetrode = BRY 20 _ 25C 04763 OF Q5-II SIEMENS AKTIENGESELLSCHAF BRY 20 is an extinguishable PNPN silicon planar thyristortetrode in TO 12 case (5 C 4 DIN 41873). The anode gate (Ga) is electrically connected to the case. The BRY 20 is particularly suitable for use as a medium fast switch. - AK & & Type Ordering code kul Ej BRY 20 a60217-Y20 C z 2 485t1—>166- Boe ‘Approx. weight1@ Dimensions in mm. Maximum ratings Anode gate reverse voltage Voar 40 v Continuous reverse voltage ~Vq 40 v Gate to cathode reverse voltage Vexr 5 Vv Rated surge forward current, see diagram Jenn = f (t)/esa 5 A Continuous forward current Ip 500 mA Gate to cathode control current Tox 100 mA Anode to gate control current Tea 300 mA Junction temperature range jj -55to+125 | °c Storage temperature range Tatg ~65t0+200 | °c Total power dissipation (Tease $45 °C) Prot 1.3 w Thermal resistance y Junction to ambient air Rina | $220 Kw | Junction to case Rinse | $60 KW 4 Static characteristics (Temp = 25°C) i Off-state current i > (Vp = 40 V; Rox = 5 kQ; Iga = 0) Ip 3(<200) nA : (Vp = 30 V; Rex = 5 kQ; Iga = 0) Ib 2(< 200) nA | Reverse current (Va = 40 V; Rex = 5 kQ; Iga = 0) Ik <200 nA j (Vp = 40 V; Rex = 5 KQ; Temp = 125 °C) Ia <25 HA Cathode-gate reverse current (Vox = 5 V; Zax = 0) <Iexn | <10 WA Anode-gate reverse current Vea = 40V Tear <200 nA Forward voltage (Ig = 100 mA; Rex = 5 kQ; Iga = 0) Ve <1.3 v Breakover voltage (-65 to +125°C) (Rox = 5 kQ; Iga = 0) Veo) <40 v j Holding current (Rgx = 5 kQ) Ta 2(0.3t06.5) | ma”? q 1) Closer tolerance available on request : i 809 : "2140 F-07 : .

Be eee ee ee ee ee ee eT a -25C D M@™@ 8235605 0004764 0 maSIEG . j “ene veroe Uv “FE 2S HI BRY 20 Operating point: Vpstt = 15 V; Ri = 1 kQ; Iga = 0 Gate trigger current Toxt 60 (<100) HA Turn-off current Tgxa 2.5 (<5) mA Gate trigger voltage Vext 0.4 (to 0.8) v Operating point: Viatt = 15 V; Ri, = 600 0; Galg = 0 ; . Gate trigger current Text 50 (<100) pA 1 Turn-off current Teka 10 (<15) mA | : Operating point: Vpate = 16 V; A. = 0.5 kQ; . i Rox = 5 kQ i Anode gate trigger current Tgat <3 mA i Anode gate trigger voltage Veat 0.4 to'0.8 Vv t Dynamic characteristics i Operating point: Voate = 16 V; RL = 1 kQ; Rak = 5 kQ; Igxt = Ioxa = 5 mA Gate controlled turn-on time ty ° 100 (<300) ns Gate controlled turn-off time tog <5 us Junction capacitance (Vax = 20 V) ex | 3.8 | pF | Turn-off time (Vaq = 15 V; Ry = 1 kQ; Rak = 6 kQ) ty 7 us Critical rate of voltage rise! (Vaa = 40 V; Rex = 100 kQ) du/dt >5 Vins 2 Test circuit for switching times . . serine voce qs wo v — =) [Jane HHH } lm | ea ENTE a Ts HN ay i .

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25C D M™ 8235405 OOON7bb 4 MMSIEG . ; 250 04766 D=P— QS BRY20 ss} - SIEMENS AKTIENGESELLSCHAF ——W—Y—— \\ Trigger currant foxt =f Tens) ‘Anode control current [cat = f (Tart) : ¥ Woriuasia uA m TEU BVA S10 : CTT TTT TT ttt) A Cr it vers EEE Eee eer, te XN zt oP SEEEEEEEEEEEE TE got" INC | EBS PEEH* | PoEEDSCCEEECEET) y Pee TTT & oC COR LOTT et i COPPCCrr rss NESE Se i KER-EEEEEEEE BA co LNT TN i Aree SC] COUN i oe EERE LESS N | CRCCCCCCeeeeer COOL Ree TH Fi CONCCCEECCeeer) OEE ETEPE CREE : HSS FEET N aaSS Fi oa EEE SEE ATTN : EEE SC CSCC Cre 1 HEH COR ae Ty (sCOCOeeeee 4 oL LTT TTT TT RRA F) “20 0 20 40 60 80 10 120°¢ “20 0 «20 4 «660 60 100 120°C ‘4 any ny HA Holding current Jay =f (Tamb) : Turn-off current foxa * # (Tams) Average values scattering limits te mt fr = parameter ms Rox = 5kO : CTT TTT Tt ttt EECA EEE Ht a Cer Leer srry tnt rs 4a (TTT . * sECEEEP eer rr PSCCCCEC ; | EREEEE EEE SHEET EEEErr Tre re LTT NT CECCCeere reece CoCCCCNSEee : SEE COCCCCEEPREC] EERE EEE PEEPLES SEREeBECRERERE PRET ss CEEEEEFErEErCr Pa ECE CCCececeer LOTT AAT HE COP PSA HEE EERE BEC EEE = i : geeeT Teri rrr] pL Lr trt+4

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