BC140 SIEMENS | Alldatasheet
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— =~ 2Ge . oe - 25C D M™ 8235b05 GOO4104 2 mMSIEG .. T??-23 ; NPN Silicon Transistors SIEMENS AKTIENGESELLSCHAF 3¢ 140 : BC 141 BC 140 and BC 141 are epitaxial NPN silicon transistors in TO 39 case (5 C 3 DIN 41873). The collector is electrically connected to the case, The transistors are intended for use in AF 7 amplifiers and as complementary transistors to BC 160 and BC 161, as well as for AF : switching applications up to 1 A. The transistors BC 140 and BC 141 are available upon request as matched pairs. Type Ordering code BC 1400) 60203-x140 BC 140-6 060203-X140-v6 - BC 140-10 060203-X140-V10 j BC 140-16 060203-X140-V16 ous ce 8 > BC 140 paired 060203-x140-P we an : BC 140/BC 160 paired | 062702-C228-S2 — 3. (C Taye BC 141") Q62702-C719 Fy We fs BC 141-6 Q62702-C234 -7 BC 141-10 062702-C236 nea los ; BC 141-16 Q62702-c236 a az BC 141 paired 062702-¢209 BC 141/BC 161 paired | 062702-C230-S2 ApPrOX. weight. Dimenstons in mm Maximum ratings BC 140 8c 141 : Collector-base voltage Veso | 80 100 v Collector-emitter voltage Vceo -| 40 60 v Emitter-base voltage Vero | 7 7 v Collector current Ie 1 1 A Base current ly 0.1 04 A Junction temperature Tj 175 175 °C Storage temperature range Teta =65to+175 | -65t0+175 | °c Total power dissipation Prot 37 37 w Thermal resistance : Junction to ambient air Riva | $200 $200 Kw Junction to case Rise | $35 $35 Kw Static characteristics (Tams = 25°C) The transistors BC 140 and BC 141 are grouped at Ic = 100 mA and Veg = 1 V according : to the DC current gain hee and are marked by numerals of the DIN standard series. For the operating points quoted below, the following values apply: Type BC 140, BC 141 freoroup [@ [to te Ie fee Deg hee Vee mA Iellg Io/Ig Io/lp Vv 04 28 40 90 - 100 63 (40 to 100) | 100(63to 160) | 160(100 to 260) | - 1000 16 20 30 1.2(<1.8) 1) If the order does not include any exact indication of the current amplification group desired, a transistor of a current amplification group just available from stock will be delivered. 160.
1580 A-07
- 25C D MM 6235605 G004105 4 MMSIEG,.. SIEMENS AKTIENGESELLSCHAF BC 140 gO Static characteristics (Temp = 25°C) BC 140 BC 141 : Collector cutoff current (Vces = 60 V) Tees 10 (<100) 10(<100) nA Collector cutoff current (Ves = 60 V; Tam = 150°C) Tees 10(<100) 10 (<100) HA Collector-emitter breakdown voltage (ceo = 30 mA; pulse width = 200 usec: duty cycle 1%) Vienceo | >40 >60 v Collector-emitter breakdown voltage Uces = 100 pA) Varjces | >80 >100 v Emitter-base breakdown voltage . woe (ego = 100 HA) Vareso | >7 >7 v Collector emitter saturation voltage Conditions for matching pairs: h = Ver = ret Uc =100 mA; Veg =1V) Meee $1.26 $1.25 + Dynamic characteristics (Tamp = 25°C) : Transition frequency (Ic = 50 mA; Vee = 10V; f = 20 MHz) fr >50 >50 MHz Collector-base capacitance (Veg = 10 V; f= 1 MHz) Ccso <26 <26 pF Emitter-base capacitance (Veg = 0.5 V; f = 1 MHz) Ceso <80 <80 pF Test circuit Yep Veg Switching times for transistors ; ow BC 140, BC 141: Ig = 100 mA; I ak . [Jue [emo Uc fa: approx. —Ig2 approx. § mA) Ove ton <250 ns . ont Cry fetins tott | <860 ns . fetsns Ss 7,f0n fatins (] BAYES Aoi ts 1) The transistor is overloaded to such en extent that the DC current gain decreases to hfe = 20. °
1581 A-08 TB
ase D 5b0 LOL & MESIEG ~~. i BSC D MM 4235605 004 I F- 29-23 i . SIEMENS AKTIENGESELLSCHAF Bc140 BC141: Tetalpem. power dspation Tetalparm, power deslpation : Poe (Rey = parameter Pox = f(T), Pax = parameter i w 8c 140 W a i co a pete TET fe SRE PECH EERE EERE 1 Ce EE EEE | A . : a a2\\sseeee Ev Beek a | EEE ne} : ‘Hee REEH ec EAH Cav A Fhe to Ceol : or Ea AAR FRAC A | BRbeEEENEH BREGECEREH FERRERS FERRO (CLO ESaA FS 0 100 00°C a 100 mee —T —T Permissible pulse load ‘Transition frequency fy =f (Jc) K tinse = 10; ¥= parameter Vee=10V Ww 8C140, BC141 o 80140, BC141
1 SEES EaR Sect eeaes time heeemacii
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_25C D mm 235608 0004107 8 MESIEG’ FL 0g- 23 jf — SIEMENS AKTIENGESELLSCHAF ! BC 140 i BC 141 : Collector-emitter saturation voltage Base-emitter saturation voltage j Me Y0. AS = parameter Mei0r ho = paramatar F (common emitter configuration) (common emitter configuration) tess tae + CA { | Ue = =5=ba/ 7 cds== 5 a EEE Ccai eet : | saaiieigipaniaa | ee LOE i SAE oie ESSE eRe ; AMAL ETT wl 0 05 wy i) ee 1 BV 3 —— Vee sat BE eat : Sanrerseure current versus Transition frequency fy = fl) ‘Tego =f (Tame): Veao = 60V (Woe = 10V) mA BC140, BC141 Miz BC 140, BC14T wl SSeS eee Seema erreeerie = 3 ee oo || | FEEEEEE ERR EER Sse rein— orn B Becesceeczeercs em a PAGS ——tectrm er concen ; wo CEEEEEEEMET EH nan 0 0 100 wore . wo 5 5 ow? 5 1°mA — It —h