AF139 SIEMENS | Alldatasheet
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25C D MM 8235605 0004054 T MESIEG ,~- Dp : PNPGermanium RF Transistor - AF139 : - SIEMENS AKTIENGESELLSCHAF ——— “T-3/~O7 : for input stages, mixer and oscillator stages up to 860 MHz , AF 139 is a germanium PNP mesa transistor in TO 92 case (18 A 4 DIN 41876). The leads : are electrically insulated from the case. i ae : Type Ordering code ous AF 139 (060106-x139 = # $ . = 2 et LL (ise : : Ber Shay Bist . Approx. weight 0.4 g Dimensions in mm Maximum ratings . Collector-emitter voltage “Veeco | 15 v Collactor-base voltage -Veso | -20 v : Emitter-base voltage -Veso 0.3 v Collector current -Ie 10 mA . Emitter current Ie "1 mA Base current -hh 1 mA t Junction temperature . Ty 90 °c Storage temperature range Tatg -30to+75 | °c Total power dissipation (Tamb = 45°C) Prot 60 mw Thermal resistance Junction to ambient air. Rena $750 Kw : Junction to case Renae $400 Kw . 104 ote 1534 £-03 . a
"BSC >) = 6235605 OOO40S9 Lb MESIEG : i” i SIEMENS AKTIENGESELLSCHAF (© 04059 O AF1390 0 _ 8)-07°—— Static characteristics (Tam = 25°C) : Vee Io -h Dee Vee . v mA vA lolly mV 12 15 30 0 (>10) 380 (320 to 430) . 6 2 36 55 380 (320 to 430) 6 5 66 75 405 (360 to 450) Collector cutoff current (-Vego = 20 V) -Ieso (| -0.8 (<8) pA : Emitter cutoff current (~Vego = 0.3 V) lego | 2 (< 100) WA : Collector cutoff current (-Vceo = 15 V) Ieeq | <800 HA : Dynamic characteristics (Tam = 26°C) Operating point: ~c = 1.5 mA; —Vog = 12 V. . Transition frequency (f = 100 MHz) fr 550 MHz : Feedback time constant (f = 2.6 MHz) foo" Cyo | 3 ps : Max. frequency of oscillation fax = arora ol fax 27 GHz . V Tow Gore Reverse transfer capacitarice (f = 450 kHz) “Cie | 0.28 pF : Power gain . (f= 800 MHz; Ry = 1.4 kQ) Gyo" 11 (>9) dB Power gain (f= 900 MHz) Gop 9(>6.8) 4B Feedback damping (f = 800 MHz) =Gpoiny!? | 23 aB Noise figure (f = 800 MHz; Ry = 60 2) neo 7(<8.2) 4B Noise figure (f = 900 MHz; R, = 0.5 KO; . “Veg = 10 V:; le = 2 mA) NF 7.5 (59) 4B Four-pole characteristics: . Ao = 1,5 mA; —Vor = 12 V; f = 200 MHz Gi» = 28 mS 9120 =0,06mS -g2p=22mS — gaz» = 0,09 mS bi1p = 24: mS =bi2b = 0,16 mS —bajy= 30S Baap = 1,9 mS alg = 1,5 mA; -Vog = 12 V; f = BOOMHz di1p= 7mS Viz» =0,4mS —lyarel= 14mS G22» = 0,5 mS ~biy = 11: mS 125 =-120° Pip = 3B" bazp = 7,5 mS 1) measured in circuit shown on page 106 - LE 108 L535 E-04 “3 gens
‘“2asc D MM 8235605 GOO4OLO 4 MBSIEG ._.. \\ coerliEC. c 04000 D . : SIEMENS AKTIENGESELLSCHAF AF 139 OB 07 Test circuit for power gain and noise figure at f = 200 MHz 600 ane Ay ox tT ! | al f-200MH2 ‘ : fi i i ty el ty : Mee Yee Ly = 3 turns; d = 1mm; dia = 6.5 mm Ck = 1.5 to 5 pF so that R, = 920 . La = 2 turns; d = 1mm; dia = 6.5 mm Cy = 6.5 to 18 pF Lg = L4 = 20 turns 0.5 Culs Cz = 9.6 to 20 pF ‘on core B63310-K1-A12.3 C,= 3to 10 pF . Test circuit for power gain and noise figure at f = 800 MHz : ‘200 . & 15K ROTA : F-200ni teat : n09F i Ve i turns i Yo 6 - en t
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“Pasc ) mm 6235605 OOO4ObL T MMSIEG , _ — STENENS AKTIENGESELLSCHAF 7° 04961 9 “ppazg STB HOF Total perm. power dissipation Input characteristic fg =f (Vee): i weet R= parameter rm (cebkinon emitter configuration) t
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-25¢ D MM 8235605 0004063 3 a . 3,3 MESIEG 5 7 B/-27—, SIEMENS AKTIENGESELLSCHAF AF 139 : EE 1 1) Vint 1% is therms value of half the EMF. Interference voltage Vint 1%" = f (Ic) (terminal voltage under matching con- Power gain Gpy =f (/c) . dition) of a 100% sine wave modulated f= 200 MHZ; ~Voste = 12 V; Ry = 1kQ; ' TV-carrier at a generator impedance of Ry = 0.9 kA (common base configuration)
240 Q which causes a 1% amplitude mv 8 ‘
‘modulation on the signal carrier. 200, CCCI CLL 20 a var EZ E : ial KN m7LLCENCT I, =. FCN ae DY : a : es A wi , os a a A 2 a Ee FEE CONIC PIP NT ty : | : Fa a |W) . 012 3 4 5 6 7 8 8mA . — Power gain Gp =f (lc) Powergaln Gye = fc) 1=800MHz; —Vpatt = 12V: Ry = 1600 MHz; “Viaue = 12 Vj Ay = AataKa vee Liisa Petri View SIRVEy 18 {common base configuration) a (common base configuration) dB i ig OO . op yo] | [ers Ca cs OH 2 { Neer CACTI a { eGR Ee Pe a a a a a A fe a ee : Spoiw °C LPP ery tt a fe : | | a ae] ee eV | ee a eV “8 es A DD a a a Oe RE a oe a A ee a A [Pie | a ESSE Ee] ee a 0 & 4 8 8mA 0 a 4 6 8mA —ly eh . . 109 1539 €-08
oar S605 COO4Ob4 S MMSIEG. . -25C D Mm 423 the Unued D F-3/-O7 SIEMENS AKTIENGESELLSCHAF AF 139 ‘Small signal short circuit input ‘Small signal circuit reverse transfer : admittance Yip: ~Vog = 12 V admittance y;2n; —Vea =12V (common base configuration) {common base configuration) w measuring plane 5 mm below case bottom: ns measuring plane § mm below case bottom: . 0 at [TTT TTT Try (TELL) i a EEE Chee toy gL] | erew TT oy 9 CT flee AT i n Beeeeceean aa : f @er eer eee falLeLi gee og Lt Te || i
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