AF106 SIEMENS | Alldatasheet

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25C D M™ 8235605 OOO4O4? S MMSIEG - T-3/-07 | PNP Germanium RF Transistor “AF 106 i for input, mixer, and oscillator stages up to 260 MHz 2 The AF 106 is a general-purpose germanium PNP high frequency mesa transistor in TO 72 i case (18 A 4 DIN 41876). The leads are electrically insulated from the case. ~ i 8 : Type Ordering code us af % AF 106 Q60106-X106 j_ 7 8 .a tise Ber Shay a j Approx. weight 0.4g Dimensions in mm ‘ . ' Maximum ratings ° Collector-emitter voltage Veo 18 v Collector-base voltage -Veao 25 v . Emitter-base voltage -Veso 03 v i Collector current -I 10 mA i Junction temperature Tj 90 *c i Storage temperature range Teg =30to+75 | °c i Total power dissipation (Tamp = 45°C) Prot 60 mw j Thermdi resistance j Junction to ambient air Pensa $750 KW i Junction to case Rinuc $400 Kw ; Static characteristics (Tam) = 25°C) 4 —Vee Ic -lp ee Vee . v mA | pA Tellg Vv 6 2 29 70 0.34 (0.28 to 0.4) : Collector cutoff current (—Vego = 12 V) -Ieao 0.5 (<10) HA . Collector-base breakdown voltage i (=Iego = 100 nA) —Vierjcao | >26 v : Collector-emitter breakdown voltage —- . (~Iceo = 500 HA) —Vierjceo | >18 Vv : Emitter-base breakdown voltage . (-Iego = 100 pA) ~Varjeso | >0.3 v : ey. ah ae ant ny a8 le 93 » 11523 0-06 oo :

25¢C D MM 8235605 COO4OKS 7 MMSIEG .. . | eres eou_ususo D “AF106— j SIEMENS AKTIENGESELLSCHAF 3/ 07 H Dynamic characteristics (Tam = 25°C) i Operating point: -f¢ = 1 mA; —Veg or -Veg =12V i Transition frequency (f = 100 MHz) fr 220 MHz i aati | : Max. frequency of oscitation( fn = Vat Coe ) fax 1.2 GHz : . ‘Small signal current gain (f = 1 kHz) tte 65 (>30) - : Noise figure (f = 200 MHz; R, = 60 ) NF 5.5(<7.5) | dB i Reverse transfer capacitance (f = 450 kHz) -Ci26 0.45 pF Feedback time constant (f = 2.5 MHz) tow *Cyre | 6 psec i Operating point: -/c = 3 mA; —Vog = 10V : f= 200 MHz; R, = 920 2 i Power gain (measured in circuit ‘ shown below) Gop 17.5(>14) | dB . Four-pole characteristics: =Ig = 1A; —Veg = 12 V; f = 200 MHz, i ith = 31 mS Jia =Oms | yeiu|= 27 mS 922 = 0,15 mS itp = -12 mS bi~=-0,6mS P21) = 115° bo = 1,9 mS C11b = - 9,5 pF C12» = ~ 0,4 pF C22 = 1,5 pF j Ie = 1 MA; -Veg = 6 V; f = 100 MHz B 911» =.36 mS 912 = 0,04 mS 921b = -27 mS 922 = 0,09 mS . bit» = -6 mS bia» =-048mS — ayy = 20 mS ba = 1 mS : Test circuit for power gain at f= 200 MHz 60a tnt ty & — { ty . ce [us leon BS) r-200n et 4 ‘ : Mee Me Ly = 3turns; d= 1 mm; D = 6.5 mm Cx = 1.5 to 6 pF so that R, = 9209 La = 2 tums; d = 1 mm;D = 6.5 mm Cy = 66 to 18 pF : La = La = 20 turns 0.5 CuLs C2 = 9.5 to 20 pF on core B63310-K1-A12.3 Cy = 3t010 pF 84 nae ‘ fobs e 1524 0-07 . an

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