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Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
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Technical content
Features
- As l ow as 6mA max holding current
- UL r ecognized TO-220AB package
- 11 0°C rated junction temperature
- di/dt performance of A/μs
- QUADRAC version in cludes intergrated DIAC
- Pr ovides full control of light out put at the extreme low end of load conditions. 00V AC min isolation between mounting tab and active terminals Im proves margin of safe operation with less heat sinking required En able survivability of typically LED load operating characteristics Si mplicity of circuit design & layout
Applications
Excellent for AC switching and phase control applications such as heating, lighting, and motor speed controls. Typical applications are AC solid-state switches, lighting controls with LED lamp loads, small low current motor in power tools, and low current motors in home/brown goods appliances. Internally constructed isolated packages are offered for ease of heat sinking with highest isolation voltage. Schematic Symbol MT2 MT1 G Agency Approval Agency Agency File Number ® L Package: E71639 RoHS Benefits
Revised: January 25, 2013 08:34 AM ©2013 Littelfuse, Inc Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. T eccor® brand Thyristors
8 Amp Alternistor (High Commutation) Triac for LED dimmer application
Symbol Parameter Test Conditions Value Unit IT(RMS) RMS on-state current (full sine wave) TC = 80°C 8 A ITSM Non repetitive surge peak on-state current (full cycle, TJ initial = 25°C) f = 50 Hz t = 20 ms 80 A f = 60 Hz t = 16.7 ms 85 I2t I2t Value for fusing tp = 8.3 ms 30 A 2s di/dt Critical rate of rise of on-state current f = 120 Hz TJ = 110°C 70 A/μs IGTM Peak gate trigger current tP ≤ 10 μs; IGT ≤ IGTM TJ = 110°C 1. 6 A PG(AV) Average gate power dissipation TJ = 110°C IGT = 35mA 0.5 W Tstg Storage temperature range -40 to 150 °C TJ Operating junction temperature range -40 to 110 °C Electrical Characteristics (TJ = 25°C, unless otherwise specified) Symbol Test Conditions Quadrant Value Unit IGT VD = 12V RL = 60 Ω I – II – III MAX. 10 mA VGT I – II – III 1. 3 V VGD VD = VDRM RL = 3.3 kΩ TJ = 110°C I – II – III MIN. 0.2 V IH IT = 15mA MAX. 6 mA dv/dt V D = VDRM Gate Open TJ = 110°C MIN. 50 V/μs (dv/dt)c (di/dt)c = 4.3 A/ms T J = 110°C MIN. 10 V/μs tgt IG = 100mA PW = 15µs IT = 11 .3 A(pk) TYP . 4.0 μs Static Characteristics Symbol Test Conditions Value Unit VTM ITM = 11 .3A tp = 380 µs MAX. 1 .60 V IDRM IRRM VDRM = VRRM TJ = 110°C MAX. 500 μA Thermal Resistances Symbol Parameter Value Unit Rθ(J-C) Junction to case (AC) 2.8 °C/W Rθ(J-A) Junction to ambient 50 °C/W
Revised: January 25, 2013 08:34 AM ©2013 Littelfuse, Inc Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. T eccor® brand Thyristors Figure 2: Normaliz ed DC Gate T rigger Current for All Quadrants vs. Junction T emperature Junction Temperature (TJ)- ºC -65 -40 -15 10 35 60 85 110 0.0 Ratio of IGT IGT (TJ = 25°C) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Figure 1: Definition of Quadrants Note: Alternistors will not operate in QIV MT2 POSITIVE (Positive Half Cycle) MT2 NEGATIVE (Negative Half Cycle) NOTE: Alternistor s will not operate in QIV MT1 MT2 + IGT REF QII MT1 IGT GATE MT2 REF MT1 MT2 REF MT1 MT2 REF QI QIV QIII ALL POLARITIES ARE REFERENCED TO MT1 (-) IGT GATE (+) IGT - IGT GATE (-) IGT GATE (+) Figure 3: Normaliz ed DC Holding Current vs. Junction T emperature Figure 4: Normaliz ed DC Gate T rigger Voltage for All Quadrants vs. Junction T emperature Junction T emperature (TJ)- ºC -65 -40 -1 51 03 56 08 51 10 0.0 Ratio of IH IH (TJ = 25°C) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Junction T emperature (TJ)- ºC Ratio of VGT VGT (TJ = 25°C) -65 -40 -1 51 03 56 08 51 10 0.0 0.5 1.0 1.5 2.0 Figure 6: Maximum Allo wable Case T emperature vs. On-State Current (Standard / Alternistor T riac) RMS On-State Current (IT(RMS)) - Amps 0246 81 0 Average On-State Power Dissipation (PD(AV)) - Watts Figure 5: Power Dissipation (T ypical) vs. RMS On-State Current RMS On-State Current (IT(RMS)) - Amps 100 110 120 130 Maximum Allowable Case T emperature (TC) - °C 01234567 8
Revised: January 25, 2013 08:34 AM ©2013 Littelfuse, Inc Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. T eccor® brand Thyristors Figure 7: On-State Cur rent vs. On-State Voltage (T ypical) TC = 25°C Postitive or Negative Instantaneous On-State Voltage (vT) - Volts Postitive or Negative Instantaneous On-State Current (iT) - Amps Figure 8: Maximum Allow able Ambient T emperature vs. On-State Current RMS On-State Current (IT(RMS)) - Amps 100 120 Maximum Allowable Ambient T emperature (TA) - °C CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 FREE AIR RATING - NO HEATSINK Surge Current Duration- Full Cycles Peak Surge (Non-Repetitive) On-State Current (ITSM) - Amps 11 01 00 1000 100 Figure 9: Surge Peak On-State Current vs. Number of Cycles SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS On-State Current: [I T(RMS)]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. Overload may not be repeated until junction temperature has returned to steady-state rated value.
Revised: January 25, 2013 08:34 AM ©2013 Littelfuse, Inc Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. T eccor® brand Thyristors Physical Specifications Environmental Specifications Test Specifications and Conditions AC Blocking (VDRM) MIL-STD-750, M-1040, Cond A Applied Peak AC voltage @ 110°C for 1008 hours T emperature Cycling MIL-STD-750, M-1051, 100 cycles; -40°C to +150°C; 15-min dwell-time T emperature/ Humidity EIA / JEDEC, JESD22-A101 1008 hours; 320V - DC: 85°C; 85% rel humidity High T emp Storage MIL-STD-750, M-1031, 1008 hours; 150°C Low-T emp Storage 1008 hours; -40°C Thermal Shock MIL-STD-750, M-1056 10 cycles; 0°C to 100°C; 5-min dwell- time at each temperature; 10 sec (max) transfer time between temperature Autoclave EIA / JEDEC, JESD22-A102 168 hours (121°C at 2 ATMs) and 100% R/H Resistance to Solder Heat MIL-STD-750 Method 2031 Solderability ANSI/J-STD-002, category 3, Test A Lead Bend MIL-STD-750, M-2036 Cond E T erminal Finish 100% Matte Tin-plated Body Material UL recognized epoxy meeting flammability classification 94V-0 T erminal Material Copper Alloy Design Considerations Careful selection of the correct device for the application’s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Soldering Parameters Reflow Condition Pb – Free assembly Pre Heat - Temperature Min (Ts(min)) 150°C - Temperature Max (Ts(max)) 200°C - Time (min to max) (ts) 60 – 180 secs Average ramp up rate (Liquidus Temp) (TL) to peak 5°C/second max TS(max) to TL - Ramp-up Rate 5°C/second max Reflow - Temperature (TL) (Liquidus) 217°C - Temperature (tL) 60 – 150 seconds Peak Temperature (TP) 260+0/-5 °C Time within 5°C of actual peak Temperature (t p) 20 – 40 seconds Ramp-down Rate 5°C/second max Time 25°C to peak Temperature (TP) 8 minutes Max. Do not exceed 280°C Time Temperature TP TL TS(max) TS(min) tP tL tS time to peak temperature PreheatPreheat Ramp-upRamp-up Ramp-downRamp-do
Revised: January 25, 2013 08:34 AM ©2013 Littelfuse, Inc Specifications are subject to change without notice. Please refer to http://www.littelfuse.com for current information. T eccor® brand Thyristors Dimensions — TO-220AB (L-Package) — Isolated Mounting T ab Dimension Inches Millimeters Min Max Min Max A 0.380 0.420 9.65 10.67 B 0.105 0.115 2.67 2.92 C 0.230 0.250 5.84 6.35 D 0.590 0.620 14.99 15.75 E 0.142 0.147 3.61 3.73 F 0.110 0.130 2.79 3.30 G 0.540 0.575 13.72 14.61 H 0.025 0.035 0.64 0.89 J 0.195 0.205 4.95 5.21 K 0.095 0.105 2.41 2.67 L 0.060 0.075 1 .52 1 .91 M 0.085 0.095 2.16 2.41 N 0.018 0.024 0.46 0.61 O 0.178 0.188 4.52 4.78 P 0.045 0.060 1. 14 1 .52 R 0.038 0.048 0.97 1 .22 K J A H G B F E C D L R TC MEASURING POINT AREA (REF .) 0.17 IN2 MT2 O P N M MT1 GATE .320 8.13 .526 13.36 .276 7.01 Note: Maximum torque to be applied to mounting tab is 8 in-lbs. (0.904 Nm). Product Selector Part Number Gate Sensitivity Quadrants Type Package I – II – III Q6008LH1LED 10 mA Alternistor Triac TO-220L Packing Options Part Number Marking Weight Packing Mode Base Quantity Q6008LH1LED Q6008LH1 2.2 g Bulk 500 Q6008LH1LEDTP Q6008LH1 2.2 g Tube Pack 500 (50 per tube) CURRENT 08: 8A SENSITIVITY & TYPE H1: 10mA (QI, II & III) PACKAGE TYPE L : TO-220 Isolated VOLTAGE RATING 60 : 600V LED LIGHTING APPLICATION Q 60 08 L H1 LED DEVICE TYPE Q : Alternistor Triac Part Numbering System Part Marking System Q6008LH1 TO-220 AB - (L Package) Date Code Marking Y:Year Code M: Month Code XXX: Lot Trace Code YMXXX