P6SMB-E LITTELFUSE | Alldatasheet

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Technical content

Features

Applications

TVS devices are ideal for the protection of I/O Interfaces, VCC bus and other vulnerable circuits used in Telecom, Computer, Industrial and Consumer electronic applications. Maximum Ratings and Thermal Characteristics (TA=25OC unless otherwise noted) P6SMB-E Series Functional Diagram Bi-directional Uni-directional Cathode Anode RoHS Pb e3

  • Excellent clamping capability
  • Low incremental surge resistance
  • For surface mounted applications to optimize board space
  • Low profile package
  • Typical failure mode is short from over-specified voltage or current
  • Whisker test is conducted based on JEDEC JESD201A per its table 4a and 4c
  • IEC-61000-4-2 ESD 30kV(Air), 30kV (Contact)
  • ESD protection of data lines in accordance with IEC 61000-4-2
  • EFT protection of data lines in accordance with IEC 61000-4-4
  • Built-in strain relief
  • Fast response time: typically less than 1 .0ps from 0V to BV min
  • 600W peak pulse power capability at 10/1000μs waveform, repetition rate (duty cycles):0.01%
  • High temperature to reflow soldering guaranteed: 260°C/40sec
  • VBR @ TJ= VBR@25°C x (1+αT x (TJ - 25)) (αT:Temperature Coefficient, typical value is 0.1%)
  • EPI silicon technology
  • Meet MSL level1, per J-STD-020C, LF maximun peak of 260°C
  • Matte tin lead–free plated
  • Halogen free and RoHS compliant
  • Pb-free E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin(Sn) (IPC/JEDEC J-STD- 609A.01) Parameter Symbol Value Unit Peak Pulse Power Dissipation at TA=25ºC by 10/1000µs Waveform (Fig.2)(Note 1), (Note 2) PPPM 600 W Power Dissipation on Infinite Heat Sink at TL=50OC PD 5.0 W Peak Forward Surge Current, 8.3ms Single Half Sine Wave (Note 3) IFSM 100 A Maximum Instantaneous Forward Voltage at 50A for Unidirectional Only VF 3.5 V Operating Temperature Range TJ -65 to 150 °C Storage Temperature Range TSTG -65 to 175 °C Typical Thermal Resistance Junction to Lead RθJL 20 °C/W Typical Thermal Resistance Junction to Ambient RθJA 100 °C/W Notes: 1. Non-repetitive current pulse , per Fig. 4 and derated above TJ (initial) =25OC per Fig. 3. 3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty cycle=4 per minute maximum. P6SMB-E Series Uni-directional

©2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/29/16 TVS Diodes Surface Mount – 600W > P6SMB series I-V Curve Characteristics Vc VBR VR IR IT Ipp V Uni-directional VF PPPM Peak Pulse Power Dissipation -- Max power dissipation VR Stand-off Voltage -- Maximum voltage that can be applied to the TVS without operation VBR Breakdown Voltage -- Maximum voltage that flows though the TVS at a specified test current (IT) VC Clamping Voltage -- Peak voltage measured across the TVS at a specified Ippm (peak impulse current) IR Reverse Leakage Current -- Current measured at VR VF Forward Voltage Drop for Uni-directional Electrical Characteristics (TA=25°C unless otherwise noted) Part Number (Uni) Marking Reverse Stand off Voltage VR (Volts) Breakdown Voltage VBR (Volts) @ IT Test Current IT (mA) Maximum Clamping Voltage VC @ Ipp (V) Maximum Peak Pulse Current Ipp (A) Maximum Reverse Leakage IR @ VR (µA)MIN MAX P6SMB350A-E 350S 300 332.0 368.0 1 482.0 1 .30 1 P6SMB400A-E 400S 342 380.0 420.0 1 548.0 1 .10 1 P6SMB440A-E 440S 376 418.0 462.0 1 602.0 1 .00 1 P6SMB480A-E* 480S 408 456.0 504.0 1 658.0 0.95 1 P6SMB510A-E* 510S 434 485.0 535.0 1 698.0 0.86 1 P6SMB530A-E* 530S 451 503.5 556.5 1 725.0 0.83 1 P6SMB540A-E* 540S 460 513.0 567 .0 1 7 40.0 0.82 1 P6SMB550A-E* 550S 468 522.5 577 .5 1 760.0 0.79 1 P6SMB600A-E* 600S 510 570.0 630.0 1 822.0 0.73 1 P6SMB650A-E* 650S 553 617 .5 682.5 1 891.0 0.68 1 P6SMB700A-E* 700S 595 665.0 735.0 1 959.0 0.63 1 P6SMB800A-E* 800S 680 760.0 840.0 1 1096.0 0.55 1 P6SMB900A-E* 900S 765 855.0 945.0 1 1233.0 0.50 1 P6SMB1000A-E* 1000S 850 950.0 1050.0 1 1365.0 0.44 1 Note: for parts with * are still under development P6SMB-E Series

©2016 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 06/29/16 TVS Diodes Surface Mount – 600W > P6SMB series Part Numbering System VBR VOLTAGE 5% VBR VOLTAGE TOLERANCE SERIES P6SMB xxx A-E EPI SILICON TECHNOLOGY Part Marking System Packaging Part number Component Package Quantity Packaging Option Packaging Specification P6SMBxxxA-E DO-214AA 3000 Tape & Reel - 12mm tape/13” reel EIA STD RS-481 T ape and Reel Specification 0.47 (12.0) 0.315 (8.0) 0.157 (4.0) 0.49 (12.5) 0.80 (20.2) Arbor Hole Dia. 13.0 (330) Dimensions are in inches (and millimeters). Direction of Feed 0.059 DIA(1.5) Cover tape Cathode F XX YMXXX Marking Code Trace Code Marking Y:Year Code M: Month Code XXX: Lot Code Littelfuse Logo Cathode Band (for Uni-directional products only) Dimensions (all dimensions in mm) I LKJ Solder Pads A D E G F H C B Cathode Band (for Uni-directional products only) DO-214AA (SMB J-Bend) Dimensions Inches Millimeters Min Max Min Max A 0.076 0.086 1 .930 2.200 B 0.160 0.187 4.060 4.750 C 0.130 0.155 3.300 3.940 D 0.078 0.103 1 .990 2.610 E 0.030 0.060 0.760 1 .520 F - 0.008 - 0.203 G 0.205 0.220 5.210 5.590 H 0.006 0.012 0.152 0.305 I 0.089 - 2.260 - J 0.085 - 2.160 - K - 0.107 - 2.7 40 L 0.085 - 2.160 - P6SMB-E Series