Q4N3RP LITTELFUSE | Alldatasheet
Document overview
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Technical content
Features
- R o H S C o m p l i a n t
- Electrically-isolated packages
- Glass-passivated junctions
- Voltage capability — up to 1000 V
- Surge capability — up to 200 A Compak Package
- Surface mount package — 0.8 A and 1 A series
- New small profile three-leaded Compak package
- Packaged in embossed carrier tape with 2,500 devices per reel
- Can replace SOT-223 MT2 MT1 G *TO-220 3-lead Compak TO-92 TO-251 V-Pak TO-263 D2Pak TO-92 TO-252 D-Pak *TO-3 Fastpak TO-202
http://www.littelfuse.com E2 - 2 ©2004 Littelfuse, Inc. +1 972-580-7777 Thyristor Product Catalog See “General Notes” on page E2 - 4 and “Electrical Specification Notes” on page E2 - 5. IT(RMS) Part Number VDRM IGTIsolated Non-isolated (4) TO-92 TO-220 Compak TO-202 TO-220 TO-252 D-Pak TO-251 V-Pak TO-263 D2Pak (1) Volts (3) (7) (15) mAmps QI QII QIII QIV QIV MAX See “Package Dimensions” section for variations. (11) MIN MAX TYP
0.8 A Q2X8E3 Q2X3 200 10 10 10 25
Q4X8E3 Q4X3 400 10 10 10 25 Q6X8E3 Q6X3 600 10 10 10 25 Q2X8E4 Q2X4 200 25 25 25 50 Q4X8E4 Q4X4 400 25 25 25 50 Q6X8E4 Q6X4 600 25 25 25 50 1A Q201E3 Q2N3 200 10 10 10 25 Q401E3 Q4N3 400 10 10 10 25 Q601E3 Q6N3 600 10 10 10 25 Q201E4 Q2N4 200 25 25 25 50 Q401E4 Q4N4 400 25 25 25 50 Q601E4 Q6N4 600 25 25 25 50 4A Q2004L3 Q2004F31 Q2004D3 Q2004V3 200 10 10 10 25 Q4004L3 Q4004F31 Q4004D3 Q4004V3 400 10 10 10 25 Q6004L3 Q6004F31 Q6004D3 Q6004V3 600 10 10 10 25 Q2004L4 Q2004F41 Q2004D4 Q2004V4 200 25 25 25 50 Q4004L4 Q4004F41 Q4004D4 Q4004V4 400 25 25 25 50 Q6004L4 Q6004F41 Q6004D4 Q6004V4 600 25 25 25 50 Q8004L4 Q8004D4 Q8004V4 800 25 25 25 50 QK004L4 QK004D4 QK004V4 1000 25 25 25 50 6A Q2006L4 Q2006F41 Q2006R4 Q2006N4 200 25 25 25 50 Q4006L4 Q4006F41 Q4006R4 Q4006N4 400 25 25 25 50 Q6006L5 Q6006F51 Q6006R5 Q6006N5 600 50 50 50 75 Q8006L5 Q8006R5 Q8006N5 800 50 50 50 75 QK006L5 QK006R5 QK006N5 1000 50 50 50 75 8A Q2008L4 Q2008F41 Q2008R4 Q2008N4 200 25 25 25 50 Q4008L4 Q4008F41 Q4008R4 Q4008N4 400 25 25 25 50 Q6008L5 Q6008F51 Q6008R5 Q6008N5 600 50 50 50 75 Q8008L5 Q8008R5 Q8008N5 800 50 50 50 75 QK008L5 QK008R5 QK008N5 1000 50 50 50 75 MT1 G MT2 MT1 MT2 G G MT1 MT2 MT1 G MT2 MT2 MT1 G MT2 MT2 MT2 MT2 MT1 G MT2 MT2 GMT1 MT2 MT2 MT1 G
©2004 Littelfuse, Inc. E2 - 3 http://www.littelfuse.com Thyristor Product Catalog +1 972-580-7777 See “General Notes” on page E2 - 4 and “Electrical Specification Notes” on page E2 - 5. IDRM VTM VGT IH IGTM PGM PG(AV) ITSM dv/dt(c) dv/dt tgt I2t di/dt (1) (16) mAmps (1) (5) Volts (2) (6) (15) (18) (19) Volts (1) (8) (12) mAmps (14) Amps (14) Watts Watts (9) (13) Amps (1) (4) (13) Volts/µSec (1) Volts/µSec (10) µSec Amp 2Sec Amps/µSec TC = 25 °C TC = 100 °C TC = 125 °C TC = 25 °C TC = 25 °C 60/50 Hz TC= 100 °C TC= 125 °C MAX MAX MAX MAX TYP MIN TYP
http://www.littelfuse.com E2 - 4 ©2004 Littelfuse, Inc. +1 972-580-7777 Thyristor Product Catalog Specific Test Conditions di/dt — Maximum rate-of-change of on-state current; I GT = 200 mA with ≤0.1 µs rise time dv/dt — Critical rate-of-rise of off-state voltage at rated V DRM gate open dv/dt(c) — Critical rate-of-rise of commutation voltage at rated V DRM and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate unenergized I2t — RMS surge (non-repetitive) on-state current for period of 8.3 ms for fusing IDRM — Peak off-state current, gate open; V DRM = maximum rated value IGT — DC gate trigger current in specific operating quadrants; VD = 12 V dc IGTM — Peak gate trigger current IH — Holding current (DC); gate open IT(RMS) — RMS on-state current conduction angle of 360° ITSM — Peak one-cycle surge PG(AV) — Average gate power dissipation PGM — Peak gate power dissipation; IGT ≤ IGTM tgt — Gate controlled turn-on time; I GT = 200 mA with 0.1 µs rise time VDRM — Repetitive peak blocking voltage VGT — DC gate trigger voltage; V D = 12 V dc; RL = 60 Ω VTM — Peak on-state voltage at maximum rated RMS current General Notes
- All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 °C unless specified otherwise.
- Operating temperature range (T J) is -65 °C to +125 °C for TO-92, -25 °C to +125 °C for Fastpak, and -40 °C to +125 °C for all other devices.
- Storage temperature range (T S) is -65 °C to +150 °C for TO-92, -40 °C to +150 °C for TO-202, and -40 °C to +125 °C for all other devices.
- Lead solder temperature is a maximum of 230 °C for 10 seconds, maximum; ≥1/16" (1.59 mm) from case.
- The case temperature (T C) is measured as shown on the dimen- sional outline drawings. See “Package Dimensions” section of this catalog. IT(RMS) Part Number VDRM IGT IDRMIsolated Non-isolated (4) (16) TO-3 Fastpak TO-220 TO-202 TO-220 TO-263 D2Pak (1) Volts (3) (7) (15) mAmps (1) (16) mAmps QI QII QIII QIV QIV TC = 25 °C TC = 100 °C TC = 125 °C MAX See “Package Dimensions” section for variations. (11) MIN MAX TYP MAX 10 A Q2010L4 Q2010R4 Q2010N4 200 25 25 25 50 0.05 1 Q4010L4 Q4010R4 Q4010N4 400 25 25 25 50 0.05 1 Q6010L4 Q6010R4 Q6010N4 600 25 25 25 50 0.05 1 Q8010L4 Q8010R4 Q8010N4 800 25 25 25 50 0.1 1 QK010L4 QK010R4 QK010N4 1000 25 25 25 50 0.1 3 Q2010L5 Q2010F51 Q2010R5 Q2010N5 200 50 50 50 75 0.05 0.5 2 Q4010L5 Q4010F51 Q4010R5 Q4010N5 400 50 50 50 75 0.05 0.5 2 Q6010L5 Q6010F51 Q6010R5 Q6010N5 600 50 50 50 75 0.05 0.5 2 Q8010L5 Q8010R5 Q8010N5 800 50 50 50 75 0.1 0.5 2 QK010L5 QK010R5 QK010N5 1000 50 50 50 75 0.1 3 15 A Q2015L5 Q2015R5 Q2015N5 200 50 50 50 0.05 0.5 2 Q4015L5 Q4015R5 Q4015N5 400 50 50 50 0.05 0.5 2 Q6015L5 Q6015R5 Q6015N5 600 50 50 50 0.05 0.5 2 Q8015L5 Q8015R5 Q8015N5 800 50 50 50 0.1 1 3 QK015L5 QK015R5 QK015N5 1000 50 50 50 0.1 3 25 A Q2025R5 Q2025N5 200 50 50 50 0.1 1 3 Q4025R5 Q4025N5 400 50 50 50 0.1 1 3 Q6025R5 Q6025N5 600 50 50 50 0.1 1 3 Q8025R5 Q8025N5 800 50 50 50 0.1 1 3 QK025R5 QK025N5 1000 50 50 50 0.1 3 Q6025P5 600 50 50 50 120 0.1 5 Q8025P5 800 50 50 50 120 0.1 5 35 A Q6035P5 600 50 50 50 120 0.1 5 Q8035P5 800 50 50 50 120 0.1 5 MT1 MT2 Gate MT1 MT2 G MT1 G MT2 MT2 MT1 G MT2 MT2 MT2 MT2 MT1 G
©2004 Littelfuse, Inc. E2 - 5 http://www.littelfuse.com Thyristor Product Catalog +1 972-580-7777 Electrical Specification Notes (1) For either polarity of MT2 with reference to MT1 terminal (2) For either polarity of gate voltage (V GT) with reference to MT1 terminal (3) See Gate Characteristics and Definition of Quadrants. (4) See Figure E2.1 through Figure E2.7 for current rating at specific operating temperature. (5) See Figure E2.8 through Figure E2.10 for i T versus vT. (6) See Figure E2.12 for V GT versus TC. (7) See Figure E2.11 for I GT versus TC. (8) See Figure E2.14 for I H versus TC. (9) See Figure E2.13 for surge ra ting with specific durations. (10) See Figure E2.15 for t gt versus IGT. (11) See package outlines for lead fo rm configurations. When ordering special lead forming, add type number as suffix to part number. (12) Initial on-state current = 200 mA dc for 0.8 A to10 A devices, 400 mA dc for 15 A to 35 A devices (13) See Figure E2.1 through Figure E2.6 for maximum allowable case temperature at maximum rated current. (14) Pulse width ≤10 µs; IGT ≤ IGTM (15) R L = 60 Ω for 0.8 A to10 A triacs; RL = 30 Ω for 15 A to 35 A triacs (16) T C = TJ for test conditions in off state (17) I GT = 300 mA for 25 A and 35 A devices (18) Quadrants I, II, III only (19) Minimum non-trigger V GT at 125 °C is 0.2 V for all except 50 mA MAX QIV devices which are 0.2 V at 110 °C. Gate Characteristics Teccor triacs may be turned on between gate and MT1 terminals in the following ways:
- In-phase signals (with standard AC line) using Quadrants I and III
- Application of unipolar pulses (gate always positive or nega- tive), using Quadrants II and III with negative gate pulses and Quadrants I and IV with positive gate pulses However, due to higher gate requirements for Quadrant IV, it is recommended that only negative pulses be applied. If pos- itive pulses are required, see “Sensitive Triacs” section of this catalog or contact the factory. Also, see Figure AN1002.8, “Amplified Gate” Thyristor Circuit. VTM VGT IH IGTM PGM PG(AV) ITSM dv/dt(c) dv/dt tgt I2t di/dt (1) (5) Volts (2) (6) (15) (18) (19) Volts (1) (8) (12) mAmps (14) Amps (14) Watts Watts (9) (13) Amps (1) (4) (13) Volts/µSec (1) Volts/µSec (10) (17) µSec Amps 2Sec Amps/µSecTC = 25 °C T C = 25 °C 60/50 Hz TC = 100 °C TC = 125 °C MAX MAX MAX TYP MIN TYP 1.6 2.5 35 1.8 20 0.5 120/100 2 150 3 60 70 1.6 2.5 35 1.8 20 0.5 120/100 2 150 3 60 70 1.6 2.5 35 1.8 20 0.5 120/100 2 100 3 60 70 1.6 2.5 35 1.8 20 0.5 120/100 2 75 3 60 70 1.6 2.5 35 1.8 20 0.5 120/100 2 50 3 60 70 1.6 2.5 50 1.8 20 0.5 120/100 4 350 225 3 60 70 1.6 2.5 50 1.8 20 0.5 120/100 4 350 225 3 60 70 1.6 2.5 50 1.8 20 0.5 120/100 4 300 200 3 60 70 1.6 2.5 50 1.8 20 0.5 120/100 4 250 175 3 60 70 1.6 2.5 50 1.8 20 0.5 120/100 4 150 3 60 70 1.6 2.5 70 2 20 0.5 200/167 4 400 275 4 166 100 1.6 2.5 70 2 20 0.5 200/167 4 400 275 4 166 100 1.6 2.5 70 2 20 0.5 200/167 4 350 225 4 166 100 1.6 2.5 70 2 20 0.5 200/167 4 300 200 4 166 100 1.6 2.5 70 2 20 0.5 200/167 4 200 4 166 100 1.8 2.5 100 2 20 0.5 200/167 5 400 275 4 166 100 1.8 2.5 100 2 20 0.5 200/167 5 400 275 4 166 100 1.8 2.5 100 2 20 0.5 200/167 5 350 225 4 166 100 1.8 2.5 100 2 20 0.5 200/167 5 300 200 4 166 100 1.8 2.5 100 2 20 0.5 200/167 5 200 4 166 100 1.4 2.75 50 2 20 0.5 250/220 5 550 475 3 260 100 1.4 2.75 50 2 20 0.5 250/220 5 450 400 3 260 100 1.5 2.75 50 2 20 0.5 350/300 5 550 475 3 508 100 1.5 2.75 50 2 20 0.5 350/300 5 450 400 3 508 100
http://www.littelfuse.com E2 - 6 ©2004 Littelfuse, Inc. +1 972-580-7777 Thyristor Product Catalog In all cases, if maximum surge capability is required, pulses should be a minimum of one magnitude above I GT rating with a steep rising waveform ( ≤1 µs rise time). Definition of Quadrants Electrical Isolation Teccor’s isolated triac packages will withstand a minimum high potential test of 2500 V ac rms from leads to mounting tab or base, over the operating temper ature range of the device. The following isolation table shows standard and optional isolation ratings. * UL Recognized File E71639 ** For 4000 V isolation, use V suffix in part number. * Mounted on 1 cm 2 copper foil surface; two-ounce copper foil MT2 POSITIVE (Positive Half Cycle) MT2 NEGATIVE (Negative Half Cycle) MT1 MT2 + I GT REF QII MT1 I GT GATE MT2 REF MT1 MT2 REF MT1 MT2 REF QI QIV QIII ALL POLARITIES ARE REFERENCED TO MT1 (-) I GT GATE (+) I GT - I GT GATE (-) I GT GATE (+) Electrical Isolation from Leads to Mounting Tab * VA CR M S TO-220 Isolated Fastpak Isolated
2500 Standard Standard
4000 Optional ** N/A
Thermal Resistance (Steady State) R θ JC [R θ JA] (TYP.) °C/W Package Code PE C F F 2 L R D V N Type TO-3 Fastpak TO-92 Compak TO-202 Type 1 TO-202 Type 2 TO-220 Isolated TO-220 Non-isolated TO-252 D-Pak TO-251 V-Pak TO-263 D2Pak
0.8 A 60 [135] 60 *
1 A 50 [95] 40 *
6 A 3.8 3.3 1.8 [45] 1.8 8A 3.3 2.8 1.5 1.5 10 A 3.5 2.6 1.3 1.3 15 A 2.1 1.1 1.1 25 A 1.6 0.89 0.89 35 A 1.5
©2004 Littelfuse, Inc. E2 - 7 http://www.littelfuse.com Thyristor Product Catalog +1 972-580-7777 Figure E2.1 Maximum Allowable Case Temperature versus On-state Current (0.8 A and 1 A) Figure E2.2 Maximum Allowable Case Temperature versus On-state Current (4 A and 6 A) Figure E2.3 Maximum Allowable Case Temperature versus On-state Current (8 A and 10 A) Figure E2.4 Maximum Allowable Case Temperature versus On-state Current (10 A) Figure E2.5 Maximum Allowable Case Temperature versus On-state Current (15 A) Figure E2.6 Maximum Allowable Case Temperature versus On-state Current (25 A and 35 A) 100 110 120 130 RMS On-state Current [lT(RMS)] – AMPS Maximum Allowable Case Temperature (TC) – ˚C CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 CASE TEMPERATURE: Measured as shown on Dimensional Drawing 1 A 0.8 A 01234567 100 110 120 130 RMS On-state Current [lT(RMS)] – Amps Maximum Allowable Case Temperature (TC) – ˚C
6 A TO-220 (Isolated)
6 A TO-202
6 A TO-220 (Non-isolated)
6 A D
4 A TO-220 (Isolated)
4 A TO-202 (Type 1 and 3)
4 A TO-252
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 ˚CASE TEMPERATURE: Measured as shown on Dimensional Drawing
4 A TO-202 (TYPE 2 and 4)
4 A TO-251
RMS On-state Current [lT(RMS)] – AMPS Maximum Allowable Case Temperature (TC) – ˚C 10 A TO-220 (Isolated)
8 A TO-220 (Non-isolated)
8 A D2Pak
8 A TO-202
8 A TO-220 (Isolated)
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360 ˚CASE TEMPERATURE: Measured as shown on Dimensional Drawing 02468 1 0 1 2 1 4 100 110 120 130 RMS On-state Current [lT(RMS)] – Amps Maximum Allowable Case Temperature (TC) – ˚C CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚CASE TEMPERATURE: Measured as shown on Dimensional Drawing
10 A TO-202
10 A TO-220 (Non-isolated)
10 A D
RMS On-state Current [lT(RMS)] – AMPS Maximum Allowable Case Temperature (TC) – ˚C CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚CASE TEMPERATURE: Measured as shown on Dimensional Drawing
15 A TO-220 (Non-isolated)
15 A D
15 A TO-220 (Isolated)
RMS On-state Current [lT(RMS)] – Amps Maximum Allowable Case Temperature (TC) – ˚C CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ CASE TEMPERATURE: Measured as shown on Dimensional Drawing
25 A TO-220 (Non-isolated)
25 A D
25 A TO-3 Fastpak
35 A TO-3 Fastpak
http://www.littelfuse.com E2 - 8 ©2004 Littelfuse, Inc. +1 972-580-7777 Thyristor Product Catalog Figure E2.7 Maximum Allowable Ambient Temperature versus On-state Current Figure E2.8 On-state Current versus On-state Voltage (Typical) (0.8 A and 1 A) Figure E2.9 On-state Current versus On-state Voltage (Typical) (4 A, 6 A, 8 A, and 10 A) Figure E2.10 On-state Current versus On-state Voltage (Typical) (15 A and 25 A) Figure E2.11 Normalized DC Gate Trigger Current for All Quadrants versus Case Temperature Figure E2.12 Normalized DC Gate Trigger Voltage for All Quadrants versus Case Temperature 120 100 TO-220 Devices and TO-202 (Type 1 and 3) RMS On-state Current [IT (RMS)] — Amps Maximum Allowable Ambient Temperature (TA) — ˚C
1 A TO-92
0.8 A TO-92
CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ FREE AIR RATING – NO HEATSINK TO-202 (TYPE 2 and 4) TO-251 Positive or Negative Instantaneous On-state Voltage (vT) – Volts Positive or Negative Instantaneous On-state Current (iT) – Amps TC = 25 ˚C 1 A 0.8 A Positive or Negative Instantaneous On-state Voltage (vT) – Volts Positive or Negative Instantaneous On-state Current (iT) – Amps TC = 25 ˚C 6-10 A Positive or Negative Instantaneous On-state Voltage (vT) – Volts Positive or Negative Instantaneous On-state Current (iT) – Amps TC = 25 ˚C
15 A and 25 A
25 A and 35 A Fastpak
-65 -40 -15 +25 +65 +125 1.0 2.0 3.0 4.0 Case Temperature (TC) – ˚C Ratio of IGT IGT(TC = 25 ˚C) -65 -15 -40 +25 +65 +125 1.0 1.5 2.0 Case Temperature (TC) – ˚C Ratio of VGT VGT(TC = 25 ˚C)
©2004 Littelfuse, Inc. E2 - 9 http://www.littelfuse.com Thyristor Product Catalog +1 972-580-7777 Figure E2.13 Peak Surge Current versus Surge Current Duration Figure E2.14 Normalized DC Holding Current versus Case Temperature Figure E2.15 Turn-on Time versus Gate Trigger Current (Typical) SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT [l T(RMS)]: Maximum Rated Value at Specified Case Temperature NOTES: 1) Gate control may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value.
25 A TO-220
Surge Current Duration – Full Cycles Peak Surge (Non-repetitive) On-state Current (lTSM) – Amps200 0.8 A
25 A Fastpak
35 A Fastpak
-65 -40 -15 +25 +65 +125 1.0 2.0 3.0 4.0 Case Temperature (TC) – ˚C Ratio of IH IH(TC = 25 ˚C) INITIAL ON-STATE CURRENT = 200 mA DC 0.8 A - 10 A Devices = 400 mA DC 15 A - 25 A Devices 0 25 50 75 100 125 150 175 200 225 250 275 300 Typical Turn-on Time (tgt) – µSec DC Gate Trigger Current (lGT) – mA Devices with lGT = 10 mA Devices with lGT = 25 mA Devices with lGT = 50 mA TC = 25 ˚C
http://www.littelfuse.com E2 - 10 ©2004 Littelfuse, Inc. +1 972-580-7777 Thyristor Product Catalog Figure E2.16 Power Dissipation (Typical) versus On-state Current (0.8 A and 1 A) Figure E2.17 Power Dissipation (Typical) versus On-state Current (6 A to 10 A and 15 A) Figure E2.18 Power Dissipation (Typical) versus On-state Current (25 A to 35 A) Figure E2.19 Power Dissipation (Typical) versus RMS On-state Current (4 A) RMS On-state Current [IT(RMS)] – Amps Average On-state Power Dissipation [PD(AV)] – Watts 0.5 1.0 1.5 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ 1 A 0.8 A 0123456789 1 0 1 1 1 2 1 3 1 4 1 5 1 6 RMS On-state Current [lT(RMS)] – Amps Average On-state Power Dissipation [PD(AV)] – Watts 6-10 A 15 A CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ 0 8 16 24 32 40 RMS On-state Current [lT(RMS)] – Amps Average On-state Power Dissipation [PD(AV)] – Watts CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚25 A
25 A - 35 A Fastpaks
RMS On-state Current [IT(RMS)] – Amps Average On-state Power Dissipation [PD(AV)] – Watts 0 1.0 2.0 3.0 4.0 1.0 2.0 3.0 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 360˚ 4 A 4.0