PZT3904 SIEMENS | Alldatasheet
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Technical content
NPN Silicon Switching Transistor PZT 3904 5.91 Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration PZT 3904 Q62702-Z2029ZT 3904 SOT-223 1 2 3 4 B C E C Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 60 Emitter-base voltage VEB0 6 Collector current IC 200 mA Total power dissipation,TS =7 2˚ C Ptot 1.5 W Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 122 K/W Junction - soldering point Rth JS ≤ 52 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu.
- High DC current gain 0.1 mA to 100 mA
- Low collector-emitter saturation voltage
- Complementary type: PZT 3906 (PNP)
Electrical Characteristics
atTA = 25 ˚C, unless otherwise specified. UnitValuesParameter Symbol min. typ. max. DC characteristics VCollector-emitter breakdown voltage IC = 1 mA,IB = 0 V(BR)CE0 40 – – Collector-base breakdown voltage IC = 10µA,IB = 0 V(BR)CB0 60 – – Emitter-base breakdown voltage IE = 10µA,IC = 0 V(BR)EB0 6–– nACollector-base cutoff current VCB = 30 V,IE = 0 ICB0 ––5 0 Collector-emitter cutoff current VCE = 30 V, –VBE = 0.5 V ICEV ––5 0 –DC current gain1) IC = 0.1 mA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V hFE 100 300 VCollector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCEsat 0.2 0.3 Base-emitter saturation voltage1) IC = 10 mA, IC = 1 mA IC = 50 mA, IC = 5 mA VBEsat 0.85 0.95 Base-emitter cutoff current V CE = 30 V, –VBE = 0.5 V IBEV ––5 0 1) Pulse test conditions:t≤ 300µs,D = 2 %
atTA = 25 ˚C, unless otherwise specified. MHzTransition frequency IC = 10 mA, VCE = 20 V,f = 100 MHz fT 300 – – pFCollector-base capacitance VCB = 5 V,f = 1 MHz C obo ––4 AC characteristics UnitValuesParameter Symbol min. typ. max. Input capacitance VEB = 0.5 V,f = 1 MHz C ibo ––8 dBNoise figure IC = 100µA, VCE = 5 V, RS = 1 kΩ , f = 10 Hz to 15.7 kHz F ––5 kΩInput impedance IC = 1 mA, VCE = 10 V,f = 1 kHz h11e 1–1 0 10–4Open-circuit reverse voltage transfer ratio IC = 1 mA, VCE = 10 V,f = 1 kHz h12e 0.5 – 8 –Short-circuit forward current transfer ratio IC = 1 mA, VCE = 10 V,f = 1 kHz h21e 100 – 400 µSOpen-circuit output admittance IC = 1 mA, VCE = 10 V,f = 1 kHz h22e 1–4 0 ns ns ns ns VCC = 3 V,IC = 10 mA, IB1 = 1 mA VBE(off) = 0.5 V Delay time Rise time V CC = 3 V,IC = 10 mA, IB1 =IB2 = 1 mA Storage time Fall time (see diagrams) t d tr tstg tf 200
Turn-on time when switched from –VBEoff = 0.5 V toVBEon = 10.6 V, ICon = 10 mA;IBon = 1 mA Input waveform;tr < 1 ns;tp = 300 ns; Delay and rise time test circuit; total shunt δ = 0.02. capacitance of test jig and connectors C S < 4 pF; scope impedance = 10 MΩ . Turn-off timeICon = 10 mA;IBon = –IBoff = 1 mA Storage and fall time test circuit; total shunt capacitance of test jig and connectors C S < 4 pF; scope impedance = 10 MΩ . Input waveform;tf < 1 ns; 10µs < tp ≤ 500 µs; δ = 0.02.
Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Permissible pulse loadPtot max/Ptot DC= f(tp) Saturation voltageIC = f(VBEsat,VCEsat) hFE =1 0 DC current gainhFE = f(IC ) VCE = 10 V, normalized