PZT3904 INFINEON | Alldatasheet

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Technical content

1 Nov-30-2001

NPN Silicon Switching Transistor /G01 High DC current gain: 0.1mA to 100mA /G01 Low collector-emitter saturation voltage /G01 Complementary type: PZT3906 (PNP) VPS051631 Type Marking Pin Configuration Package PZT3904 ZT 3904 1 = B 2 = C 3 = E 4 = C SOT223 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 40 V Collector-base voltage 60VCBO 6Emitter-base voltage VEBO DC collector current IC 200 mA Total power dissipation, TS = 72 °C Ptot W1.5 150Junction temperature Tj °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS /G01 52 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance

2 Nov-30-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 40 - - V Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO 60 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 V(BR)EBO 6 - - Collector cutoff current VCB = 30 V, IE = 0 ICBO - - 50 nA Collector-emitter cutoff current VCE = 30 V, -VBE = 0.5 V ICEV - - 50 Base-emitter cutoff current VCE = 30 V, -VBE = 0.5 IBEV - - 50 DC current gain 1) IC = 0.1 mA, VCE = 1 V IC = 1 mA, VCE = 1 V IC = 10 mA, VCE = 1 V IC = 50 mA, VCE = 1 V IC = 100 mA, VCE = 1 V hFE 100 300 Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCEsat 0.2 0.3 V Base-emitter saturation voltage 1) IC = 100 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VBEsat 0.85 0.9 1) Pulse test: t ≤=300µs, D = 2%

3 Nov-30-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter ValuesSymbol Unit max.min. typ. AC Characteristics fT 300Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz - MHz- Ccb - - pF4Collector-base capacitance VCB = 5 V, f = 1 MHz CebEmitter-base capacitance VEB = 0.5 V, f = 1 MHz - - 8 F -Noise figure IC = 100 µA, VCE = 5 V, RS = 1 k/G01 , f = 10Hz to 15.7kHz, 5- dB h11e 1 10Short-circuit input impedance IC = 1 mA, VCE = 10 V, f = 1 kHz - k/G01 Open-circuit reverse voltage transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz h12e - 10-480.5 Short-circuit forward current transf.ratio IC = 1 mA, VCE = 10 V, f = 1 kHz 100h21e - -400 Open-circuit output admittance IC = 1 mA, VCE = 10 V, f = 1 kHz /G02 S40h22e -1 Delay time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V - 35 ns-td Rise time VCC = 3 V, IC = 10 mA, IB1 = 1 mA, VBE(off) = 0.5 V tr - 35- tstg - - 200Storage time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA Fall time VCC = 3 V, IC = 10 mA, IB1=IB2 = 1mA tf - - 50

4 Nov-30-2001

+3.0 V -0.5 V <4.0 pF C +10.9 V D = 2%300 ns <1.0 ns Ω Ω Storage and fall time EHN00062 275 +3.0 V -9.1 <4.0 pF C +10.9 V D = 2% 1N916 <1.0 µs50010 t1 Ω Ω V k ns

5 Nov-30-2001

Saturation voltage IC = f (VBEsat, VCEsat) hFE = 10 EHP00711PZT 3904 0 V BE sat C 101 100 Ι V mA CE satV, 102 V BEV CE Total power dissipation Ptot = f(TS) 0 15 30 45 60 75 90 105 120 °C 150 TS 150 300 450 600 750 900 1050 1200 1350 mW 1650 Ptot Permissible pulse load Ptotmax / PtotDC = f (tp) EHP00293PZT 3904 -6 -510 010s 010 210 10-4 10-3 10-2 101 D = 0.0050.01 0.02 0.05 0.1 0.2 0.5 totmax totP DC P pt tp =D T tp T DC current gain hFE = f (IC) VCE = 10V, normalized EHP00712PZT 3904 10 mA h C FE 10-1 10 10 10-1 0 1 2 Ι 125 ˚C 25 ˚C -55 ˚C