PZT2907A

PZT2907 SIEMENS | Alldatasheet

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Technical content

PNP Silicon Switching Transistors PZT 2907 PZT 2907 A Maximum Ratings Type Ordering Code (tape and reel) Marking Package 1)Pin Configuration PZT 2907 PZT 2907 A Q62702-Z2028 Q62702-Z2025 ZT 2907 ZT 2907 A SOT-223 1 2 3 4 B C E C 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm× 40 mm × 1.5 mm/6 cm2 Cu. Parameter Symbol Values Unit Collector-emitter voltage VCE0 V Collector current IC mA Junction temperature Tj ˚C Total power dissipation,TS = 110 ˚C Ptot W Storage temperature range Tstg Collector-base voltage VCB0 Thermal Resistance Junction - ambient2) Rth JA ≤ 87 K/W 600 1.5 150 – 65 … + 150 Emitter-base voltage VEB0 40 60 PZT 2907 PZT 2907 A Junction - soldering point Rth JS ≤ 27

• High DC current gain: 0.1 mA to 500 mA
• Low collector-emitter saturation voltage
• Complementary types: PZT 2222 (NPN) PZT 2222 A (NPN) 5.91

Electrical Characteristics

atTA = 25 ˚C, unless otherwise specified. DC current gain1) IC = 0.1 mA,VCE = 10 V PZT 2907 PZT 2907 A IC = 1 mA,VCE = 10 V PZT 2907 PZT 2907 A IC = 10 mA,VCE = 10 V PZT 2907 PZT 2907 A IC = 150 mA,VCE = 10 V PZT 2907 PZT 2907 A IC = 500 mA,VCE = 10 V PZT 2907 PZT 2907 A VCollector-emitter breakdown voltage IC = 10 mA,IB = 0 PZT 2907 PZT 2907 A V(BR)CE0 Collector-emitter cutoff current VCE = 30 V,+V BE = 0.5 V ICEV ––5 0 UnitValuesParameter Symbol min. typ. max. DC characteristics Collector-base breakdown voltage IC = 10µA,IB = 0 PZT 2907 PZT 2907 A V(BR)CB0 Emitter-base breakdown voltage IE = 10µA,IE = 0 V(BR)EB0 5–– nAEmitter-base cutoff current VEB = 3 V,IC = 0 IEB0 ––1 0 nA nA µA µA Collector-base cutoff current VCB = 50 V,IE = 0 PZT 2907 PZT 2907 A VCB = 50 V,IE = 0,TA = 150 ˚C PZT 2907 PZT 2907 A ICB0 Collector-base cutoff current V CE = 30 V,+V BE = 0.5 V IEBV ––5 0 –hFE 100 100 100 100 300 300 1) Pulse test conditions:t≤ 300 µs,D = 2 %.

atTA = 25 ˚C, unless otherwise specified. Base-emitter saturation voltage1) IC = 150 mA,IB = 15 mA IC = 500 mA,IB = 50 mA Collector-emitter saturation voltage1) IC = 150 mA,IB = 15 mA IC = 500 mA,IB = 50 mA MHzTransition frequency IC = 20 mA,VCE = 20 V,f = 100 MHz fT 200 – – AC characteristics pFCollector-base capacitance VCB = 10 V,f = 1 MHz C obo ––8 VVCEsat 0.4 1.6 VBEsat 1.3 2.6 UnitValuesParameter Symbol min. typ. max. DC characteristics ns ns ns ns VCC = 30 V,IC = 150 mA, IB1 = 15 mA Delay time Rise time V CC = 6 V,IC = 150 mA, IB1 =IB2 = 15 mA Storage time Fall time (see diagrams) t d tr tstg tf Input capacitance V EB = 0.5 V,f = 1 MHz C ibo ––3 0 1) Pulse test conditions:t≤ 300 µs,D = 2 %.

Input waveform and test circuit for determining delay, rise and turn-on time Turn-on time when switched to–ICon = 150 mA;–IBon = 15 mA Input waveform and test circuit for determining storage, fall and turn-off time Turn-off time when switched to–ICon = 150 mA; –IBon = 15 mA to cut-off with +IBoff = 15 mA Pulse generator: Oscillograph: duty factor D = 2 % rise time tr ≤ 5n s pulse duration tp = 200 ns output impedance Zi = 10 MΩ rise time tr ≤ 2n s output impedance Zo = 50Ω

Total power dissipationPtot= f(TA*;TS) * Package mounted on epoxy Saturation voltageIC = f(VBEsat,VCEsat) hFE =1 0 Transition frequencyfT = f(IC ) VCE = 20 V,f = 100 MHz DC current gainhFE = f(IC ) VCE =1 0V

Permissible pulse loadPtot max/Ptot DC =f (tp)